631

NTE631
Silicon Rectifier Diode
High−Speed Switch
SOD110 Surface Mount Package
Description:
The NTE631 is a high−speed switching diode fabricated in planar technology and encapsulated in
a very small rectangular ceramic SOD110 SMD package.
Features:
D Small Ceramic SOD110 SMD Package
D High Switching Speed
Applications:
D High−Speed Switching in Surface Mounted Circuits
Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85V
Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Continuous Forward Current (Note 1), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA
Repetitive Peak Forward Current, IFRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5020mA
Non−Repetitive Peak Forward Current (Square Wave, TJ = +25C Prior to Surge), IFSM
t = 1s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
t = 1ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
t = 1sec . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5A
Total Power Dissipation (TA = +25C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C
Thermal Resistance, Junction−to−Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 315K/W
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200K/W
Note 1. Device mounted on an FR4 printed−circuit board.
Electrical Characteristics: (TJ = +25C, unless otherwise specified)
Parameter
Forward Voltage
Symbol
VF
Test Conditions
Min
Typ
Max
Unit
IF = 1mA
−
−
715
mV
IF = 10mA
−
−
855
mV
IF = 50mA
−
−
1.0
V
IF = 150mA
−
−
1.25
V
Rev. 12−14
Electrical Characteristics (Cont’d): (TJ = +25C, unless otherwise specified)
Parameter
Symbol
Reverse Current
IR
Test Conditions
VR = 25V
TJ = +150C
VR = 75V
TJ = +150C
Min
Typ
Max
Unit
−
−
30
nA
−
−
30
A
−
−
1
A
−
−
50
A
Diode Capacitance
Cd
f = 1MHz, VR = 0
−
−
1.5
pF
Reverse Recovery Time
trr
When switched from IF = 10mA to IR = 10mA,
RL = 100, measured at IR = 1mA
−
−
4
ns
Forward Recovery Voltage
Vfr
When switched from IF = 10mA, tr = 20ns
−
−
1.75
V
.078 (2.0)
.049 (1.25)
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.062
(1.6)
Max
Cathode Identifier
K
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