Diodes SMD Type HIGH-SPEED SWITCHING DIODE BAS216 SOD110 Unit: mm Features Small ceramic SMD package High switching speed:max. 4 ns Continuous reverse voltage:max.75V Repetitive peak reverse voltage:max.85V cathode idenfifier Repetitive peak forward current:max. 500 mA. Absolute Maximum Ratings Ta = 25 Parameter Continuous peak reverse voltage Symbol VR Continuous forward current IF Note 1 IFSM square wave; Tj = 25 Non-repetitive peak forwrad current Min VRRM Continuous reverse voltage Repetitive peak forward current Conditions IFSM Total power dissipation Ptot Storage temperature Tstg Junction temperature Tj Max Unit 85 V 75 V 250 mA 500 mA prior to surge; A 4 t = 1 ms 1 t=1s 0.5 t=1 Tamb = 25 400 ;note 1 -65 A mW +150 150 Note 1. Device mounted on an FR4 printed-circuit board. www.kexin.com.cn 1 Diodes SMD Type HIGH-SPEED SWITCHING DIODE BAS216 Electrical Characteristics Ta = 25 Parameter Symbol forward voltage VF capacitance reverse current IR Conditions Max Unit IF = 1 mA 715 mV IF = 10 mA 855 mV IF = 50 mA 1 V IF = 150 mA 1.25 V VR = 25 V 30 nA 1 A 30 A VR = 75 V VR = 25 V, Tj = 150 VR = 25 V, Tj = 150 diods capacitance Cd reverse recovery time trr Min VR = 1 V, f = 1 MHz 50 A 1.5 pF 4 ns 1.75 V when switched from IF = 10 mA to IR = 10 mA; RL = 100 measured at IR = 1 mA forward recovery voltage Vrr Note 1.Pulsed test: tp = 300 s, ä = 0.02. Marking Marking 2 A6 www.kexin.com.cn when switched from IF = 10 mA;tr = 20 ns