NTE5534A

NTE5534A
Silicon Controlled Rectifier (SCR)
600V, 50 Amp, TO3 Isolated Square Pack
Description:
The NTE5534A is a general purpose SCR in a TO3 isolated high power square pack designed for
use in applications where power handling and power dissipation are critical, such as solid state relays,
welding equipment, and high power motor controls.
Based on a clip assembly technology, the NTE5534A offers superior performance in surge current
handling capabilities.
Features:
D High Stability and Reliability
D High Surge Capability
D High On−State Current
D Easy Mounting (Fast−On Connections)
D Isolated Package: Insulating Voltage = 2500VRMS
Absolute Maximum Ratings: (Limiting Values)
RMS On−State Current (TC = +75°C, 180° Conduction Angle), IT(RMS) . . . . . . . . . . . . . . . . . . . . 50A
Average On−State Current (TC = +75°C, 180° Conduction Angle), IT(AV) . . . . . . . . . . . . . . . . . . . 32A
Non−Repetitive Surge Peak On−State Current (TJ = +25°C), ITSM
t = 8.3ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 610A
t = 10ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 580A
I2t Value for Fusing (TJ = +25°C), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1680A2s
Critical Rate of Rise On−State Current, dI/dt
(IG = 160mA, tr ≤ 100ns, F = 60Hz, TJ = +125°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A/μs
Peak Gate Current (tp = 20μs, TJ = +125°C), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Average Gate Power Dissipation (TJ = +125°C), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Maximum Peak Reverse Gate Voltage, VGRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.9°C/W
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50°C/W
Rev. 4−10
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Gate Trigger Current
IGT
VD = 12V, RL = 33Ω
8
−
80
mA
Gate Trigger Voltage
VGT
VD = 12V, RL = 33Ω
−
−
1.3
V
Gate Non−Trigger Voltage
VGD
TJ = +125°C, VD = 600V, RL = 3.3kΩ
0.2
−
−
V
Holding Current
IH
IT = 500mA, Gate Open
−
−
150
mA
Latching Current
IL
IG = 1.2 x IGT
−
−
200
mA
Critical Rise of Off−State Voltage
dV/dt
TJ = 125°C, Gate Open, VD = 402V 1000
−
−
V/μs
Peak On−State Voltage
VTM
ITM = 100A, tp = 380μs, TJ = 25°C
−
−
1.9
V
Threshold Voltage
VTO
TJ = 125°C
−
−
1.0
V
Rd
TJ = 125°C
−
−
8.5
mΩ
VDRM = 600V
−
−
10
μA
−
−
5
mA
−
−
10
μA
−
−
5
mA
Dynamic Resistance
Peak Forward Blocking Current
IDRM
TJ = +125°C
Peak Reverse Blocking Current
IRRM
VDRM = 600V
TJ = +125°C
.535 (13.6) Max
1.193 (30.3) Max
Anode
.177 (4.5) Max
1.063
(27.0)
Max
38° Max
43° Max
Cathode
Gate
.867 (22.0) Max
.945
(24.0)
Max
.551
(14.0)
Max
1.575 (40.0) Max
.118 (3.0) Max