NTE NTE5499

NTE5498 & NTE5499
Silicon Controlled Rectifier (SCR)
12 Amp
Description:
The NTE5498 and NTE5499 silicon controlled rectifiers are high performance glass passivated
PNPN devices in a TO220 type package designed for general purpose high current applications
where moderate gate sensitivity is required.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Peak Repetitive Off–State Voltage (TJ = –40° to +125°C, RGK = 1kΩ), VDRM, VRRM
NTE5498 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5499 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
RMS On–State Current (All Conduction Angles, TC = +85°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . 12A
Average On–State Current (Half Cycle, 180° Conduction Angle, TC = +85°C), IT(AV) . . . . . . . . 7.6A
Non–Repetitive On–State Current (Half Cycle, 60Hz), ITSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132A
Non–Repetitive On–State Current (Half Cycle, 50Hz), ITSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120A
Circuit Fusing Considerations (Half Cycle, t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72A2s
Peak Gate Current (10µs Max), IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak Gate Dissipation (10µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Average Gate Dissipation (20ms Max), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3K/W
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W
Lead Temperature (During Soldering, 1.6mm from case, 10sec max), TL . . . . . . . . . . . . . . . +250°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Off–State Leakage Current
IDRM,
IRRM
On–State Voltage
VT
Test Conditions
Min Typ Max
Unit
TJ = +125°C
–
–
1.5
mA
TJ = +25°C
–
–
5.0
µA
IT = 24A, TJ = +25°C
–
–
1.8
V
VDRM + VRRM, RGK = 1kΩ
On–State Threshold Voltage
VT(TO)
TJ = +125°C
–
–
1.0
V
On–State Slope Resistance
rT
TJ = +125°C
–
–
36
mΩ
Gate–Trigger Current
IGT
VD = 7V
5
–
10
mA
Gate–Trigger Voltage
VGT
VD = 7V
–
–
2.0
V
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max
Unit
Holding Current
IH
RGK = 1kΩ
–
–
40
mA
Latching Current
IL
RGK = 1kΩ
–
–
30
mA
Critical Rate of Voltage Rise
dv/dt
VD = .67 x VDRM, RGK = 1kΩ, TJ = +125°C 100
–
–
V/µs
Critical Rate of Current Rise
di/dt
IG = 50mA, diG/dt = 0.5A/µs, TJ = +125°C
100
–
–
A/µs
Gate Controlled Delay Time
tgd
IG = 50mA, diG/dt = 0.5A/µs
–
–
500
ns
Commutated Turn–Off Time
tq
VD = .67 x VDRM, VR = 35V, IT = IT(AV),
TC = +85°C
–
–
50
µs
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
Anode
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Cathode
.100 (2.54)
Gate
Anode