234

NTE234
Silicon PNP Transistor
Low Noise, High Gain Amplifier
TO−92 Type Package
(Compl to NTE2696)
Description:
The NTE234 is a silicon PNP transistor in a TO92 type package designed especially for low noise
preamplifier and small signal industrial amplifier applications. This device features low collector saturation voltage, tight beta control, and excellent low noise characteristics.
Features:
D Low Noise
D High DC Current Gain
D High Breakdown Voltage
D Low Pulse Noise
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Steady State Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +125C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +125C
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 120V, IE = 0
−
−
100
nA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
−
−
100
nA
120
−
−
V
350
−
700
Breakdown Voltage
Collector−to−Emitter
DC Current Gain
V(BR)CEO IC = 1mA, IB = 0
hFE
VCE = 6V, IC = 2mA
Rev. 8−15
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Saturation Voltage
Collector−to−Emitter
VCE(sat)
IC = 10mA, IB = 1mA
−
−
0.3
V
Base−to−Emitter Voltage
VBE
VCE = 6V, IC = 2mA
−
0.65
−
V
fT
VCE = 6V, IC = 1mA
−
100
−
MHz
Transition Frequency
Collector Output Capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
−
4
−
pF
Noise Figure
NF
VCE = 6V, IC = 100A,
f = 10Hz, Rg = 10k
−
−
6
dB
VCE = 6V, IC = 100A,
f = 1Hz, Rg = 10k
−
−
2
VCE = 6V, IC = 100A,
f = 1Hz, Rg = 100k
−
3
−
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
E C B
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.205 (5.2) Max
.105 (2.67) Max