NTE2407 Silicon PNP Transistor General Purpose Amp, Surface Mount (Compl to NTE2406) Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA Total Device Dissipation (FR–5 Board, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225mW Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8mW/°C Thermal Resistance, Junction–to–Ambient (FR–5 Board, Note 1), RthJA . . . . . . . . . . . . . . 556°C/W Total Device Dissipation (Alumina Substrate, Note 2), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/°C Thermal Resistance, Junction–to–Ambient (Alumina Substrate, Note 2), RthJA . . . . . . . . 417°C/W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 ° to +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 ° to +150°C Note 1. FR–5 = 1.000 (25.4mm) x .750 (19.05mm) x .062 (1.57mm). Note 2. Alumina = .400 (10.2mm) x .300 (7.62mm) x .024 (.609mm), 99.5% alumina. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 60 – – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 10mA, IB = 0, Note 3 60 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 5 – – V ICBO VCB = 50V, IE = 0 – – 0.01 µA VCB = 50V, IE = 0, TA = +125°C – – 10 µA ICEX VCE = 30V, VEB(off) = 0.5V – – 50 nA IB VCE = 30V, VEB(off) = 0.5V – – 50 nA Collector Cutoff Current Base Current Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit VCE = 10V, IC = 0.1mA 35 – – VCE = 10V, IC = 1mA 50 – – VCE = 10V, IC = 10mA 100 – – VCE = 10V, IC = 150mA 100 – 300 VCE = 10V, IC = 500mA 50 – – IC = 150mA, IB = 15mA – – 0.4 V IC = 500mA, IB = 50mA – – 1.6 V IC = 150mA, IB = 15mA – – 1.3 V IC = 500mA, IB = 50mA – – 2.6 V IC = 50mA, VCE = 20V, f = 100MHz, Note 3 300 – – MHz ON Characteristics (Note 3) DC Current Gain hFE Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage VCE(sat) VBE(sat) Small–Signal Characteristics Current Gain–Bandwidth Product fT Output Capacitance Cobo VCB = 10V, IE = 0, f = 1MHz – – 8 pF Input Capacitance Cibo VEB = 2V, IC = 0, f = 1MHz – – 30 pF Turn–On Time ton – – 45 ns Delay Time td VCC = 30V, IC = 150mA, IB1 = 15mA – – 10 ns Rise Time tr – – 40 ns Turn–On Time toff – – 100 ns Delay Time ts – – 80 ns Rise Time tf – – 30 ns Switching Characteristics VCC = 6V, IC = 150mA, IB1 = IB2 = 15mA Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. .016 (0.48) C B .098 (2.5) Max E .037 (0.95) .074 (1.9) .051 (1.3) .118 (3.0) Max .043 (1.1) .007 (0.2)