NTE NTE2407

NTE2407
Silicon PNP Transistor
General Purpose Amp, Surface Mount
(Compl to NTE2406)
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total Device Dissipation (FR–5 Board, Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225mW
Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8mW/°C
Thermal Resistance, Junction–to–Ambient (FR–5 Board, Note 1), RthJA . . . . . . . . . . . . . . 556°C/W
Total Device Dissipation (Alumina Substrate, Note 2), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/°C
Thermal Resistance, Junction–to–Ambient (Alumina Substrate, Note 2), RthJA . . . . . . . . 417°C/W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 ° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 ° to +150°C
Note 1. FR–5 = 1.000 (25.4mm) x .750 (19.05mm) x .062 (1.57mm).
Note 2. Alumina = .400 (10.2mm) x .300 (7.62mm) x .024 (.609mm), 99.5% alumina.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Base Breakdown Voltage
V(BR)CBO
IC = 10µA, IE = 0
60
–
–
V
Collector–Emitter Breakdown Voltage
V(BR)CEO
IC = 10mA, IB = 0, Note 3
60
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO
IE = 10µA, IC = 0
5
–
–
V
ICBO
VCB = 50V, IE = 0
–
–
0.01
µA
VCB = 50V, IE = 0, TA = +125°C
–
–
10
µA
ICEX
VCE = 30V, VEB(off) = 0.5V
–
–
50
nA
IB
VCE = 30V, VEB(off) = 0.5V
–
–
50
nA
Collector Cutoff Current
Base Current
Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VCE = 10V, IC = 0.1mA
35
–
–
VCE = 10V, IC = 1mA
50
–
–
VCE = 10V, IC = 10mA
100
–
–
VCE = 10V, IC = 150mA
100
–
300
VCE = 10V, IC = 500mA
50
–
–
IC = 150mA, IB = 15mA
–
–
0.4
V
IC = 500mA, IB = 50mA
–
–
1.6
V
IC = 150mA, IB = 15mA
–
–
1.3
V
IC = 500mA, IB = 50mA
–
–
2.6
V
IC = 50mA, VCE = 20V,
f = 100MHz, Note 3
300
–
–
MHz
ON Characteristics (Note 3)
DC Current Gain
hFE
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
VCE(sat)
VBE(sat)
Small–Signal Characteristics
Current Gain–Bandwidth Product
fT
Output Capacitance
Cobo
VCB = 10V, IE = 0, f = 1MHz
–
–
8
pF
Input Capacitance
Cibo
VEB = 2V, IC = 0, f = 1MHz
–
–
30
pF
Turn–On Time
ton
–
–
45
ns
Delay Time
td
VCC = 30V, IC = 150mA,
IB1 = 15mA
–
–
10
ns
Rise Time
tr
–
–
40
ns
Turn–On Time
toff
–
–
100
ns
Delay Time
ts
–
–
80
ns
Rise Time
tf
–
–
30
ns
Switching Characteristics
VCC = 6V, IC = 150mA,
IB1 = IB2 = 15mA
Note 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.016 (0.48)
C
B
.098
(2.5)
Max
E
.037 (0.95)
.074 (1.9)
.051
(1.3)
.118 (3.0) Max
.043 (1.1)
.007 (0.2)