Data Sheet Schottky barrier diode RB520S-30 Applications Low current rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 0.8 0.12±0.05 0.6 0.8±0.05 3) High reliability. Construction Silicon epitaxial planar 1.6±0.1 1.2±0.05 1.7 Features 1) Ultra Small mold type. (EMD2) 2) Low IR. EMD2 Structure 0.3±0.05 0.6±0.1 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) Taping specifications(Unit : mm) 0.2±0.05 φ1.5±0.05 2.0±0.05 φ1.55±0.05 0.95±0.06 0.90±0.05 空ポケット Empty pocket 0 Absolute maximum ratings(Ta=25°C) Parameter Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature Electrical characteristics (Ta=25°C) Parameter Limits Symbol VR Io IFSM Tj Tstg 2.0±0.05 4.0±0.1 0 Unit V mA A °C °C 30 200 1 125 -40 to +125 Unit Conditions Min. Typ. Max. Forward voltage - - 0.6 V IF=200mA Reverse current IR - - 1 μA VR=10V 1/3 0.2 0.76±0.05 0.75±0.05 Symbol VF www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1.25 0.06 1.26±0.05 0 3.5±0.05 0.6 1.25 0.06 1.3±0.06 0 0 2.40±0.05 2.45±0.1 φ0.5 8.0±0.15 1.75±0.1 4.0±0.1 2011.03 - Rev.D Data Sheet RB520S-30 1000000 Ta=125℃ Ta=75℃ 10 1 Ta=25℃ 0.1 Ta=-25℃ 0.01 1000 Ta=25℃ 100 Ta=-25℃ 10 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 20 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 800 500 490 600 500 400 AVE:114nA 200 AVE:507.6mV AVE:28.2pF 15 10 Ct DISPERSION MAP 10 1cyc 15 AVE:5.60A 5 0 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms 8.3ms 1cyc 5 Ifsm t 5 0 0 1 10 1 100 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS IFSM DISRESION MAP 0.3 Mounted on epoxy board 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.01 IF=100mA 300us Rth(j-a) Rth(j-c) 100 0.008 D=1/2 0.2 Sin(θ＝180) DC 0.1 REVERSE POWER DISSIPATION:PR (W) time FORWARD POWER DISSIPATION:Pf(W) 1ms 20 0 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm IM=10mA 25 5 10 10 30 IR DISPERSION MAP 30 20 35 0 VF DISPERSION MAP 25 40 100 480 30 Ta=25℃ f=1MHz VR=0V n=10pcs 45 700 300 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 50 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 510 1000 0 Ta=25℃ VR=10V n=30pcs 900 REVERSE CURRENT:IR(nA) 520 10000 30 1000 Ta=25℃ IF=200mA n=30pcs 10 1 0 600 530 FORWARD VOLTAGE:VF(mV) Ta=75℃ 10000 1 0 PEAK SURGE FORWARD CURRENT:IFSM(A) f=1MHｚ 100000 0.001 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 100 Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) 1000 DC 0.006 D=1/2 Sin(θ＝180) 0.004 0.002 10 0.001 0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1000 0 0 0.1 0.2 0.3 0.4 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 2/3 0.5 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 2011.03 - Rev.D Data Sheet RB520S-30 0.5 0.4 DC t 0.3 T VR D=t/T VR=15V Tj=125℃ D=1/2 0.2 0.1 Sin(θ＝180) Io 0A 0V Io 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) 0.5 t 0.4 T DC VR D=t/T VR=15V Tj=125℃ 0.3 D=1/2 0.2 0.1 Sin(θ＝180) 0 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating curve (Io-Ta) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 125 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating curve (Io-Tc) 3/3 2011.03 - Rev.D Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A