RB095T-40 Diodes Schottky barrier diode RB095T-40 zExternal dimensions (Unit : mm) zApplications Switching power supply zStructure 4.5±0.3 0.1 2.8±0.2 0.1 8.0±0.2 12.0±0.2 5.0±0.2 ① 13.5MIN 1.2 zConstruction Silicon epitaxial planar 15.0±0.4 0.2 8.0 10.0±0.3 0.1 zFeatures 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability 1.3 0.8 (1) (2) (3) 0.7±0.1 0.05 2.6±0.5 ROHM : ＴO220FN ① Manufacture Date zAbsolute maximum ratings (Ta=25°C) Param eter Sym bol Lim its Unit VRM 45 V Revers e voltage (DC) VR 40 V Average rectified forward current Io 6 A Forward current s urge peak （ 60Hz・ 1cyc ）（ *1 ） Junction tem perature IFSM 100 A Tj 150 ℃ Storage tem perature Ts tg -40 to +150 ℃ Revers e voltage (repetitive peak) (*1)Tc=100 ℃ m ax Per chip : Io/2 zElectrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR θjc Min. - Typ. - Max. 0.55 10 3.0 Unit V mA ℃/W Conditions IF=3A VR=40V junction to case Rev.B 1/3 RB095T-40 Diodes zElectrical characteristic curves 1000000 10 Ta=125℃ 1000 f=1MHz Ta=25℃ Ta=75℃ 0.1 10000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=-25℃ Ta=125℃ 1 Ta=150℃ 100000 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) Ta=150℃ Ta=75℃ 1000 100 Ta=25℃ 10 1 Ta=-25℃ 100 10 0.1 0.01 0.01 0 100 200 300 400 500 600 700 1 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 15 20 25 30 35 40 0 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 500 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 200 490 480 470 AVE:472.9mV 460 Ta=25℃ VR=40V n=30pcs 180 160 140 120 100 80 60 40 AVE:14.2uA 650 630 620 610 600 590 580 570 20 450 Ta=25℃ f=1MHz VR=0V n=10pcs 640 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=3A n=30pcs REVERSE CURRENT:IR(uA) FORWARD VOLTAGE:VF(mV) 5 AVE:617.9pF 560 0 550 VF DISPERSION MAP IR DISPERSION MAP 1000 30 8.3ms 200 150 100 50 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 5 100 10 1 trr DISPERSION MAP 1000 t 100 10 1ms 10 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 time Rth(j-a) 300us Rth(j-c) 1 0.001 100 IF=3A D=1/2 5 DC Sin(θ＝180) 0 0.1 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 IM=100mA FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 100 Ifsm 8.3ms 1cyc 0 IFSM DISRESION MAP PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms AVE:11.40ns AVE:178.0A 0 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc Ifsm 250 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 300 Ct DISPERSION MAP 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 2 4 6 8 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS Rev.B 10 2/3 RB095T-40 Diodes AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 15 REVERSE POWER DISSIPATION:PR (W) 8 D=1/2 6 DC 4 Sin(θ＝180) 2 DC 10 0 10 20 30 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 15 Io t VR D=t/T VR=20V T Tj=150℃ D=1/2 5 Sin(θ＝180) 0 0 S 0A 0V AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 10 0A 0V Io VR D=t/T VR=20V T Tj=150℃ t DC 10 D=1/2 5 Sin(θ＝180) 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) ELECTROSTATIC DISCHARGE TEST ESD(KV) 30 No break at 30kV 25 20 15 AVE:15.6kV 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1