F12N6 5 WF WFF N65 Silicon N-Channel MOSFET Features ■ 12A,650V,RDS(on)(Max0.78Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 51.7nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi ’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for AC- DCs w itching pow er supplies , DC- DCpow er c onv e r t er s , h i g h v olt a ge H- b r i d ge mo to r dr i v e P WM Absolute Maximum Ratings Symbol VDSS Parameter Value Units Drain Source Voltage 650 V Continuous Drain Current(@Tc=25℃) 12* A Continuous Drain Current(@Tc=100℃) 7.6* A 48* A ID IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 990 mJ EAR Repetitive Avalanche Energy (Note 1) 22 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns 51 W 0.41 W/℃ -55~150 ℃ 300 ℃ Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ, Tstg TL Junction and Storage Temperature Channel Temperature * Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter Value Units Min Typ Max 2.45 ℃/W RQJC Thermal Resistance, Junction-to-Case - - RQ CS Thermal Resistance, Case-to-Sink - - - ℃/W RQJA Thermal Resistance, Junction-to-Ambient - - 62.5 ℃/W Rev.A Oct.2010 Copyr ight@Winsemi Microelectronics Co., Ltd., All right reserved. F12N6 5 WF WFF N65 Electrical Characteristics (Tc = 25°C) Characteristics Gate leakage current Symbol I GSS Gate−source breakdown V(BR)GSS Test Condition Min Type Max Unit - - ±100 nA ±30 - - V V DS = 650 V, VGS = 0 V - - 10 μA V DS = 480 V, Tc = 125℃ - - 100 μA 650 - - V V GS = ±30 V, VDS = 0 V I G = ±10 μA, VDS = 0 V voltage Drain cut−off current I DSS Drain−source breakdown V(BR)DSS I D = 250 μA, V GS = 0 V voltage Gate threshold voltage VGS(th) V DS = 10 V, I D =250 μA 3 - 4.5 V Drain−source ON resistance R DS(ON) V GS = 10 V, I D = 6A - 0.64 0.78 Ω Forward Transconductance gfs V DS = 50 V, I D = 6A - 6.4 - S Input capacitance C iss V DS = 25 V, - 1830 - Reverse transfer capacitance Crss V GS = 0 V, - 2.2 - Output capacitance Coss f = 1 MHz - 155 - Switching time Rise time tr V DD =325 V, - 50 - Turn−on time ton I D =12A - 49 - Fall time tf R G=25 Ω - 310 - Turn−off time toff - 54 - - 51.7 - - 9.6 - - 18.6 - pF ns (Note4, Total gate charge Qg (gate−source plus gate−drain) 5) V DD = 520 V, V GS = 10 V, Gate−source charge Qgs Gate−drain (“miller ”) Charge Qgd I D = 12 A (Note4,5) nC Source−Drain Ratings and Characteristics (Ta = 25°C) Symbol Test Condition Min Type Max Un it I DR - - - 12 A Pulse drain reverse current I DRP - - - 48 A Forward voltage (diode) VDSF I DR = 12 A, VGS = 0 V - - 1.4 V Reverse recovery time trr I DR = 12 A, VGS = 0 V, - 450 - ns Reverse recovery charge Qrr dIDR / dt = 100 A / μs - 5.0 - μC Characteristics Continuous drain reverse current Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=14mH,IAS=12A,VDD=95V,RG=25Ω ,Starting TJ=25℃ 3.ISD≤ 12A,di/dt≤ 200A/us, V DD<BVDSS,STARTING TJ =25℃ 4.Pulse Test: Pulse Width≤ 300us,Duty Cycle≤ 2% 5.Essentially independent of operating temperature. This transistor is an electrostatic sensitive device 2/7 Steady, keep you advance F12N6 5 WF WFF N65 Please handle with caution Fig.1 On-State Characteristics Fig.3 On-Resistance variation vs Drain Current Fig.2 Transfer Current Characteristics Fig.4 Body Diode Forward Voltage Variation with Source Current and Temperature 3/7 Steady, keep you advance F12N6 5 WF WFF N65 Fig.8 On-Resistance Variation vs Junction Temperature Fig.7 Maximum Safe Operation Area Fig.6 Gate Charge Characteristics Fig.8 Maximum Drain Current vs Case Temperature Fig.9 Transient Thermal Response curve 4/7 Steady, keep you advance F12N6 5 WF WFF N65 Fig.10 Gate Test circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Uncamped Inductive Switching Test Circuit & Waveform 5/7 Steady, keep you advance F12N6 5 WF WFF N65 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, keep you advance F12N6 5 WF WFF N65 TO-220 Package Dimension Unit:mm 7/7 Steady, keep you advance