J8N 65B WF WFJ 8N6 Sili con N-Ch annel MOS FET Cha OSF Features � 7.5A,650V,RDS(on)(Max1.3Ω)@VGS =10V � Ultra-low Gate charge(Typical 25nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage (VISO=4000V AC) � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe, VDMOS technology. this latest technology has been especially designed to mi nimize on-state resistance, have a high rugged avalanche suited characteristics .This devices is specially well for half bridge and electronic lamp ball ast, full bridge resonant topology li ne a high efficiency switched mode power suppli es, active power factor correction. Absolute Maximum Ratings Symbol VDSS Pa ram e te r Value Units Drain Source Voltage 650 V Con tinuous Drain Current(@Tc=25℃) 7.5 A Con tinuous Drain Current(@Tc=100℃) 4.3 A 32 A ±30 V ID I DM Drain Current Pulsed VGS Gate to Source Voltage E AS Single Pulsed Avalanche Energy (Note2) 230 mJ E AR Repetitive Avalanche Energy (Note1) 14.7 mJ dv/dt Peak Diode Recovery dv /dt (Note3) 4.5 V/ ns PD TJ,T stg TL (Note1) Total Power Dissipation(@Tc=25℃) 147 W Derating Factor above 25℃ 0.38 W/℃ -40~150 ℃ 300 ℃ Junction and Storage Temperature Channel Temperature Thermal Characteristics Symbol Pa ra me te r Valu e Min Typ Max Units RQ JC Thermal Resistance , Junction -to -Case - - 0.85 ℃/W R QJA Thermal Resistance , Junction-to -Ambient - - 62.5 ℃/W Rev.A Nov.2011 Copyr ight@Winsemi M ic ro e le ctro n ics Co., Ltd., All right reser ved. J8N 65B WF WFJ 8N6 Electrical Characteristics(Tc=25℃) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut -off current Symbol Min Type Max Unit I GSS VGS =±30V,VDS=0V - - ±100 nA V(BR)G SS IG =±10 µA,VDS =0V ±30 - - V VDS =650V,VGS=0V,Tc=25℃ - - 10 µA VDS =500V,Tc=125℃ - - 100 µA 650 - - V - 0.70 - V/℃ I DSS Drain -source breakdown voltage V(BR)DSS Breakdown Voltage Temperature ∆BVDSS/∆ Coefficient Test Condition ID=250 µA,VG S=0V ID=250 µA, referenced to 25℃ TJ Gate threshold voltage VGS(th) VDS =VGS ,ID=250 µA 2 - 4 V Drain -source ON resistance RDS(ON) VGS =10V,ID=3.75A - 1.1 1.3 Ω Forward Transconductance gfs VDS =40V,I D=3.75A - 6.2 - S Input capacitance C iss VDS =25V, - 965 Reverse transfer capacitance C rss VGS =0V, - 12 16 Output capacitance C oss f=1MHz - 105 135 VDD=300V, - 60 130 T d(on) ID=7.5A - 16.5 45 tf R G=25Ω - 64.5 140 - 81 170 - 28 36 - 4.5 - - 12 - Turn-On Rise time Switching Turn-On time time Turn-Off Fall time tr 1255 pF ns Turn-Off time (Note4,5) T d(off) Total gate charge(ga te-source VDD=480V, Qg plus gate-drain) VGS =10V, Gate-source charge Qgs Gate-drain("mi ller") Charge Qgd ID=7.5A (Note4,5) nC Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Min Type Max Unit Con tinuous drain reverse current I DR - - - 7.5 A Pulse drain reverse current I DRP - - - 30 A Forward voltage(diode) VDSF IDR=7.5A,VGS =0V - - 1.4 V Reverse recovery time trr IDR=7.5A,VGS =0V, - 365 - ns Reverse recovery charge Qrr dIDR / dt =100 A / µs - 3.4 - µC Note 1.Repeativity rating :pulse width lim ited by junction temperature 2.L=19.5mH I AS=7.5A,VDD=50V,RG =0Ω,Starting TJ =25℃ 3.I SD≤7.5.A,di/dt≤300A/us,VDD<BVDSS,STARTING TJ =25℃ 4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2% 5. Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/7 eady , keep you ad va nce St Ste van J8N 65B WF WFJ 8N6 Fig.1 On Region Characteristics Fig.2 Transfer Characteristics Fig.3 On-Resistance Variation vs Fig.4 Body Diode Forward Voltage Drain Current and Gate Voltage Variation with Source Curr ent and Temperature Fig.5 Capacitance Characteristics Fig.6 Gate Charge Characteristics 3/7 eady , keep you ad va nce St Ste van J8N 65B WF WFJ 8N6 Fig.7 Breakdown Voltage Variation Fig.8 On-Resistance Variation Vs.Temperature Vs.Temperature Fig.9 Maximum Safe Operation Area Fig.10 Maximum Drain Curr ent vs.case Temperature Fig.11 Transient Thermal Response Curve 4/7 eady , keep you ad va nce St Ste van J8N 65B WF WFJ 8N6 Fig.12 Gate Test Circuit & Waveform Fig.13 Resistive Switching Test Circuit & Waveform Fig.14 Unclamped Inductive Switching Test Circuit & Waveform 5/7 eady , keep you ad va nce St Ste van J8N 65B WF WFJ 8N6 Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 eady , keep you ad va nce St Ste van J8N 65B WF WFJ 8N6 TO- 262 cka ge Dim ension Pa Pac kage Dime Unit:mm 7/7 eady , keep you ad va nce St Ste van