RFL1N18, RFL1N20 Semiconductor 1A, 180V and 200V, 3.65 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1A, 180V and 200V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • High Input Impedance Formerly developmental type TA09289. • rDS(ON) = 3.65Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information G PART NUMBER PACKAGE BRAND RFL1N18 TO-205AF RFL1N18 RFL1N20 TO-205AF RFL1N20 S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-205AF DRAIN (CASE) SOURCE GATE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1997 5-1 File Number 1442.2 RFL1N18, RFL1N20 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Breakdown Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 1MΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . Tpkg RFL1N18 180 180 1 5 ±20 8.33 0.0667 -55 to 150 RFL1N20 200 200 1 5 ±20 8.33 0.0667 -55 to 150 UNITS V V A A V W W/oC oC 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER MIN TYP MAX UNITS RFL1N18 180 - - V RFL1N20 200 - - V Drain to Source Breakdown Voltage Gate Threshold Voltage SYMBOL BVDSS 2 - 4 V - - 1 µA TC = 125oC - - 25 µA VGS = ±20V, VDS = 0V - - ±100 nA ID = 1A, VGS = 10V - - 3.65 V ID = 2A, VGS = 10V - - 8.3 V ID = 1A, VGS = 10V, (Figures 6, 7) - - 3.65 Ω 400 - - S - 15 25 ns - 20 30 ns td(OFF) - 25 40 ns tf - 30 50 ns - - 200 pF - - 60 pF IDSS Gate to Source Leakage Current Drain to Source On Resistance (Note 2) IGSS VDS(ON) rDS(ON) Forward Transconductance (Note 2) Turn-On Delay Time gfs td(ON) Rise Time tr Turn-Off Delay Time ID = 250µA, VGS = 0V TC = 25oC VGS(TH) Zero Gate Voltage Drain Current Drain to Source On-Voltage (Note 2) TEST CONDITIONS Fall Time VGS = VDS, ID = 250µA, (Figure 8) VDS = 0.8 x Rated BVDSS ID = 1A, VDS = 10V, (Figure 10) ID ≈ 1A, VDD = 100V RGS = 50Ω, VGS = 10V, (Figures 11, 12, 13) Input Capacitance CISS VGS = 0V, VDS = 25V, f = 1MHz, (Figure 9) Output Capacitance COSS Reverse Transfer Capacitance CRSS - - 25 pF Thermal Resistance Junction to Case RθJC - - 15 oC/W Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS MIN TYP MAX UNITS ISD = 1A - - 1.4 V ISD = 2A, dISD/dt = 50A/µs - 200 - ns NOTE: 2. Pulse test: pulse width ≤ 300µs maximum, duty cycle ≤ 2%. 5-2 RFL1N18, RFL1N20 Typical Performance Curves Unless Otherwise Specified 1.4 1.2 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0.8 0.6 0.4 0.2 0 0 25 50 75 100 TC, CASE TEMPERATURE (oC) 125 0 25 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 10.00 OPERATION IN THIS AREA LIMITED BY rDS(ON) VGS = 20V VGS = 10V VGS = 8V 2.0 VGS = 7V 1.5 VGS = 6V 1.0 VGS = 5V VGS = 4V 0 10 100 1000 0 VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 1 2 3 4 5 VDS , DRAIN TO SOURCE VOLTAGE (V) 6 7 FIGURE 4. SATURATION CHARACTERISTICS 3.0 6 VDS = 15V 250µs PULSE TEST DUTY CYCLE ≤ 2% TC = 25oC TC = -40oC 2.0 TC = 125oC 1.5 1.0 TC = 125oC 0.5 VGS = 10V 250µs PULSE TEST DUTY CYCLE ≤ 2% 5 ON RESISTANCE (Ω) rDS(ON), DRAIN TO SOURCE 2.5 ID , DRAIN CURRENT (A) 150 0.5 RFL1N18 RFL1N20 1 250µs PULSE TEST DUTY CYCLE ≤ 20% TC = 25oC 2.5 1.00 0.01 75 100 125 TC, CASE TEMPERATURE (oC) 3.0 TC = 25oC TJ = MAX RATED 0.10 50 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE ID, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 1.0 TC = 125oC 4 TC = 25oC 3 TC = -40oC 2 1 TC = -40oC 0 0 0 2 4 6 8 10 VGS , GATE TO SOURCE VOLTAGE (V) 0 12 0.5 1.0 1.5 2.0 2.5 ID , DRAIN CURRENT (A) FIGURE 5. TRANSFER CHARACTERSTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 5-3 3.0 RFL1N18, RFL1N20 Typical Performance Curves Unless Otherwise Specified (Continued) 1.4 VGS = VDS, ID = 250µA VGS = 10V, ID = 1A NORMALIZED GATE THRESHOLD VOLTAGE NORMALIZED DRAIN TO SOURCE ON RESISTANCE 2.0 1.5 1.0 0.5 0 -50 0 100 50 1.2 1.0 0.8 0.6 150 -50 0 50 100 TJ , JUNCTION TEMPERATURE (oC) TJ , JUNCTION TEMPERATURE (oC) FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 220 FIGURE 8. NORMALIZED GATE THRESHOLD vs JUNCTION TEMPERATURE 1000 f = 1MHz VDS = 15V 250µs PULSE TEST DUTY CYCLE ≤ 2% gfs, TRANSCONDUCTANCE (S) 900 180 C, CAPACITANCE (pF) 150 140 CISS 100 60 20 COSS 800 TC = -40oC 700 TC = 25oC 600 TC = 125oC 500 400 300 200 100 CRSS 0 10 20 30 40 50 VDS, DRAIN TO SOURCE VOLTAGE (V) 60 0 FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE VDS , VOLTS (V) 200 BVDSS VDD = VDSS 0.5 1 1.5 ID, DRAIN CURRENT (A) 10 VDD = VDSS 150 GATE TO SOURCE VOLTAGE 100 0.75VDSS 0.50VDSS 0.25VDSS 8 6 4 RL = 100Ω IG(REF) = 0.09mA VGS = 10V DRAIN TO SOURCE VOLTAGE 50 2 0 0 20 IG(REF) IG(ACT) 2 2.5 FIGURE 10. TRANSCONDUCTANCE vs DRAIN CURRENT VGS , VOLTS (V) 0 t, TIME (µs) 80 IG(REF) IG(ACT) NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT 5-4 RFL1N18, RFL1N20 Test Circuit and Waveforms tON tOFF td(ON) td(OFF) tf tr VDS RL 90% 90% + RG - VDD 10% 0 10% 90% DUT VGS VGS 0 10% 50% 50% PULSE WIDTH FIGURE 13. RESISTIVE SWITCHING WAVEFORMS FIGURE 12. SWITCHING TIME TEST CIRCUIT 5-5