TSFF5410 Datasheet

TSFF5410
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diode, 870 nm,
GaAlAs Double Hetero
FEATURES
94 8390
•
•
•
•
•
Package type: leaded
Package form: T-1¾
Dimensions (in mm): Ø 5
Leads with stand-off
Peak wavelength: p = 870 nm
•
•
•
•
High reliability
High radiant power
High radiant intensity
Angle of half intensity:  = ± 22°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 24 MHz
• Good spectral matching to Si photodetectors
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
DESCRIPTION
TSFF5410 is an infrared, 870 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
• Infrared video data transmission between camcorder and
TV set
• Free air data transmission systems with high modulation
frequencies or high data transmission rate requirements
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
 (deg)
p (nm)
tr (ns)
70
± 22
870
15
TSFF5410
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
TSFF5410
PACKAGING
REMARKS
PACKAGE FORM
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
SYMBOL
VALUE
Reverse voltage
PARAMETER
TEST CONDITION
VR
5
UNIT
V
Forward current
IF
100
mA
mA
Peak forward current
tp/T = 0.5, tp = 100 μs
IFM
200
Surge forward current
tp = 100 μs
IFSM
1
A
PV
180
mW
Power dissipation
Rev. 1.8, 24-Aug-11
Document Number: 81091
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSFF5410
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
Tj
100
°C
Tamb
- 40 to + 85
°C
°C
Junction temperature
Operating temperature range
Storage temperature range
Tstg
- 40 to + 100
t  5 s, 2 mm from case
Tsd
260
°C
J-STD-051, leads 7 mm, soldered on PCB
RthJA
230
K/W
Soldering temperature
Thermal resistance junction/ambient
UNIT
200
120
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
RthJA = 230 K/W
100
80
60
40
100
80
RthJA = 230 K/W
60
40
20
20
0
0
0
10
21142
20
30
40
50
60
70 80
90 100
Tamb - Ambient Temperature (°C)
0
10
21143
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of VF
Reverse current
Junction capacitance
TEST CONDITION
SYMBOL
TYP.
MAX.
UNIT
IF = 100 mA, tp = 20 ms
VF
1.5
1.8
V
IF = 1 A, tp = 100 μs
VF
2.3
3
IF = 1 mA
TKVF
- 1.8
VR = 5 V
IR
VR = 0 V, f = 1 MHz, E = 0
Cj
MIN.
V
mV/K
10
125
μA
pF
IF = 100 mA, tp = 20 ms
Ie
IF = 1 A, tp = 100 μs
Ie
700
IF = 100 mA, tp = 20 ms
e
50
mW
IF = 100 mA
TKe
- 0.35
%/K

± 22
deg
Peak wavelength
IF = 100 mA
p
870
nm
Spectral bandwidth
IF = 100 mA

40
nm
Temperature coefficient of p
IF = 100 mA
TKp
0.25
nm/K
Rise time
IF = 100 mA
tr
15
ns
Fall time
IF = 100 mA
tf
15
ns
IDC = 70 mA, IAC = 30 mA pp
fc
24
MHz
d
2.1
mm
Radiant intensity
Radiant power
Temperature coefficient of e
Angle of half intensity
Cut-off frequency
Virtual source diameter
Rev. 1.8, 24-Aug-11
45
70
135
mW/sr
mW/sr
Document Number: 81091
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSFF5410
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1.25
Φe rel - Relative Radiant Power
Tamb < 50 °C
tp/T = 0.01
1000
IF - Forward Current (mA)
0.02
0.05
0.1
0.2
0.5
100
0.01
0.1
1
10
0.75
0.5
0.25
0
780
100
tp - Pulse Duration (ms)
16031
1.0
Fig. 6 - Relative Radiant Power vs. Wavelength
Fig. 3 - Pulse Forward Current vs. Pulse Duration
0°
10°
20°
100
tp = 100 µs
tp/T = 0.001
10
40°
1.0
0.9
50°
0.8
60°
80°
1
0
18873
1
3
2
VF - Forward Voltage (V)
4
Fig. 4 - Forward Current vs. Forward Voltage
70°
0.7
ϕ - Angular Displacement
30°
Ie rel - Relative Radiant Intensity
IF - Forward Current (mA)
1000
94 8883
0.6
0.4
0.2
0
Fig. 7 - Relative Radiant Intensity vs. Angular Displacement
1
1000
0
Φe, Ie - Attenuation (dB)
Ie - Radiant Intensity (mW/sr)
980
880
λ - Wavelength (nm)
95 9886
100
10
1
-1
-2
-3
IFDC = 70 mA
IFAC = 30 mA pp
-4
-5
0.1
1
18220
10
100
IF - Forward Current (mA)
Fig. 5 - Radiant Intensity vs. Forward Current
Rev. 1.8, 24-Aug-11
101
1000
14256
102
103
104
105
f - Frequency (kHz)
Fig. 8 - Attenuation vs. Frequency
Document Number: 81091
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSFF5410
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
C
Ø 5.8 ± 0.15
A
< 0.7
7.7 ± 0.15
8.7 ± 0.3
Area not plane
34.3 ± 0.55
11.3 ± 0.3
(3.5)
R2.49 (sphere)
1.1 ± 0.25
1 min.
Ø 5 ± 0.15
+ 0.15
0.5 - 0.05
+ 0.15
0.5 - 0.05
technical drawings
according to DIN
specifications
2.54 nom.
6.544-5258.06-4
Issue: 3; 19.05.09
95 11260
Rev. 1.8, 24-Aug-11
Document Number: 81091
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 02-Oct-12
1
Document Number: 91000