VSLY5850 Datasheet

VSLY5850
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm,
Surface Emitter Technology
FEATURES
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22114
DESCRIPTION
As part of the SurfLightTM portfolio, the VSLY5850 is an
infrared, 850 nm emitting diode based on GaAlAs surface
emitter chip technology with extreme high radiant intensity,
high optical power and high speed, molded in a clear,
untinted plastic package, with a parabolic lens.
Package type: leaded
Package form: T-1¾
Dimensions (in mm): Ø 5
Leads with stand-off
Peak wavelength: λp = 850 nm
High reliability
High radiant power
High radiant intensity
Narrow angle of half intensity: ϕ = ± 3°
Suitable for high pulse current operation
Good spectral matching with CMOS cameras
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Infrared radiation source for operation with CMOS
cameras
• High speed IR data transmission
• Smoke-automatic fire detectors
• IR Flash
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λp (nm)
tr (ns)
600
±3
850
10
VSLY5850
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
VSLY5850
PACKAGING
REMARKS
PACKAGE FORM
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Forward current
SYMBOL
VALUE
UNIT
VR
5
V
IF
100
mA
Peak forward current
tp/T = 0.5, tp = 100 μs
IFM
200
mA
Surge forward current
tp = 100 μs
IFSM
1
A
PV
190
mW
Power dissipation
Junction temperature
Tj
100
°C
Operating temperature range
Tamb
- 40 to + 85
°C
Storage temperature range
Tstg
- 40 to + 100
°C
t ≤ 5 s, 2 mm from case
Tsd
260
°C
J-STD-051, leads 7 mm, soldered on PCB
RthJA
230
K/W
Soldering temperature
Thermal resistance junction/ambient
Rev. 1.1, 28-Mar-13
Document Number: 83160
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSLY5850
www.vishay.com
Vishay Semiconductors
200
120
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
RthJA = 230 K/W
100
80
60
40
100
80
RthJA = 230 K/W
60
40
20
20
0
0
0
10
22116
20
30
40
50
60
70 80
90 100
0
Tamb - Ambient Temperature (°C)
10
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
22115
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of VF
TEST CONDITION
SYMBOL
TYP.
MAX.
IF = 100 mA, tp = 20 ms
VF
1.65
1.9
IF = 1 A, tp = 100 μs
VF
2.9
V
IF = 1 mA
TKVF
- 1.45
mV/K
IF = 10 mA
TKVF
- 1.25
mV/K
IR
not designed for reverse operation
μA
VR = 0 V, f = 1 MHz, E = 0
Cj
125
IF = 100 mA, tp = 20 ms
Ie
Reverse current
Junction capacitance
Radiant intensity
MIN.
300
600
UNIT
V
pF
900
mW/sr
IF = 1 A, tp = 100 μs
Ie
5100
IF = 100 mA, tp = 20 ms
φe
55
mW
IF = 100 mA
TKφe
- 0.35
%/K
Peak wavelength
IF = 100 mA
λp
Spectral bandwidth
IF = 100 mA
Δλ
30
nm
Temperature coefficient of λp
IF = 100 mA
TKλp
0.25
nm/K
Rise time
IF = 100 mA
tr
10
ns
Fall time
IF = 100 mA
tf
10
ns
Radiant power
Temperature coefficient of φe
ϕ
Angle of half intensity
Rev. 1.1, 28-Mar-13
mW/sr
±3
840
850
deg
870
nm
Document Number: 83160
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSLY5850
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
Tamb < 50 °C
tp/T = 0.01
1000
Radiant Power (mW)
IF - Forward Current (mA)
0.02
0.05
0.1
10
1
e-
0.2
100
0.5
100
0.01
0.1
0.1
1
10
100
tp - Pulse Duration (ms)
16031
1
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Φe, rel - Relative Radiant Power
1
1
0.1
0.01
IF = 30 mA
0.75
0.5
0.25
0.001
0
0.5
1
1.5
2
2.5
3
VF - Forward Voltage (V)
22097
0
650
3.5
750
Fig. 4 - Forward Current vs. Forward Voltage
Ie rel - Relative Radiant Intensity
0°
1000
100
10
22117
tP = 100 µs
0.01
0.1
Fig. 5 - Radiant Intensity vs. Forward Current
Rev. 1.1, 28-Mar-13
10°
20°
30°
40°
1.0
50°
0.9
60°
0.8
70°
80°
0.7
1
IF - Forward Current (A)
950
Fig. 7 - Relative Radiant Power vs. Wavelength
10 000
1
0.001
850
λ - Wavelength (nm)
21776-1
ϕ - Angular Displacement
tp = 100 µs
Ie - Radiant Intensity (mW/sr)
1000
Fig. 6 - Radiant Power vs. Forward Current
10
IF - Forward Current (A)
10
100
IF - Forward Current (mA)
16971
22132
0.6
0.4
0.2
0
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
Document Number: 83160
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSLY5850
www.vishay.com
Vishay Semiconductors
5.75 ± 0.15
PACKAGE DIMENSIONS in millimeters
C
technical drawings
according to DIN
specifications
Chip position
A
5.4 ± 0.3
Ø 5 ± 0.15
8.6 ± 0.3
< 0.7
35.85 ± 0.5
12.88 ± 0.3
7.6 ± 0.15
Parabolic lens
0.75 - 0.12
0.63
2.54 nom.
Drawing-No.: 6.544-5385.01-4
Issue: 2; 08.03.10
1.5 ± 0.25
Aera not plane
0.5
Not indicated tolerances ± 0.1
20531
Rev. 1.1, 28-Mar-13
Document Number: 83160
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000