VISHAY VSLY5850

VSLY5850
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm,
Surface Emitter Technology
FEATURES
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Package type: leaded
Package form: T-1¾
Dimensions (in mm): Ø 5
Leads with stand-off
Peak wavelength: p = 850 nm
High reliability
High radiant power
High radiant intensity
Narrow angle of half intensity:  = ± 3°
Suitable for high pulse current operation
Good spectral matching with CMOS cameras
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
22114
DESCRIPTION
VSLY5850 is an infrared, 850 nm emitting diode based on
GaAlAs surface emitter chip technology with extreme high
radiant intensity, high optical power and high speed, molded
in a clear, untinted plastic package, with a parabolic lens.
APPLICATIONS
• Infrared radiation source for operation with CMOS
cameras
• High speed IR data transmission
• Smoke-automatic fire detectors
• IR Flash
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
 (deg)
p (nm)
tr (ns)
600
±3
850
10
VSLY5850
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
VSLY5850
PACKAGING
REMARKS
PACKAGE FORM
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
Reverse voltage
TEST CONDITION
VR
5
UNIT
V
Forward current
IF
100
mA
mA
Peak forward current
tp/T = 0.5, tp = 100 μs
IFM
200
Surge forward current
tp = 100 μs
IFSM
1
A
PV
190
mW
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Tj
100
°C
Tamb
- 40 to + 85
°C
Tstg
- 40 to + 100
°C
Soldering temperature
t  5 s, 2 mm from case
Tsd
260
°C
Thermal resistance junction/ambient
J-STD-051, leads 7 mm,
soldered on PCB
RthJA
230
K/W
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902
Document Number: 83160
Rev. 1.0, 13-Oct-10
For technical questions, contact: [email protected]
www.vishay.com
1
VSLY5850
Vishay Semiconductors High Speed Infrared Emitting Diode,
850 nm, Surface Emitter Technology
200
120
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
RthJA = 230 K/W
100
80
60
40
100
80
RthJA = 230 K/W
60
40
20
20
0
0
0
10
22116
20
30
40
50
60
70 80
90 100
0
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
10
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
22115
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of VF
TEST CONDITION
SYMBOL
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 μs
TYP.
MAX.
VF
1.65
1.9
VF
2.9
V
IF = 1 mA
TKVF
- 1.45
mV/K
IF = 10 mA
TKVF
- 1.25
mV/K
IR
not designed for reverse operation
μA
VR = 0 V, f = 1 MHz, E = 0
Cj
125
IF = 100 mA, tp = 20 ms
Ie
IF = 1 A, tp = 100 μs
Ie
Reverse current
Junction capacitance
Radiant intensity
MIN.
300
600
UNIT
V
pF
900
5100
mW/sr
mW/sr
IF = 100 mA, tp = 20 ms
e
55
mW
IF = 100 mA
TKe
- 0.35
%/K
Peak wavelength
IF = 100 mA
p
Spectral bandwidth
IF = 100 mA

30
nm
Temperature coefficient of p
IF = 100 mA
TKp
0.25
nm/K
Rise time
IF = 100 mA
tr
10
ns
Fall time
IF = 100 mA
tf
10
ns
Radiant power
Temperature coefficient of e

Angle of half intensity
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2
±3
840
For technical questions, contact: [email protected]
850
deg
870
nm
Document Number: 83160
Rev. 1.0, 13-Oct-10
VSLY5850
High Speed Infrared Emitting Diode, Vishay Semiconductors
850 nm, Surface Emitter Technology
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
Tamb < 50 °C
tp/T = 0.01
1000
Radiant Power (mW)
IF - Forward Current (mA)
0.02
0.05
0.1
10
1
e-
0.2
100
0.5
0.1
100
0.01
0.1
1
10
100
tp - Pulse Duration (ms)
16031
1
100
1
Φe, rel - Relative Radiant Power
10
1
0.1
0.01
IF = 30 mA
0.75
0.5
0.25
0.001
0
0.5
1
1.5
2
2.5
3
VF - Forward Voltage (V)
22097
0
650
3.5
750
Fig. 4 - Forward Current vs. Forward Voltage
850
Fig. 7 - Relative Radiant Power vs. Wavelength
0°
Ie rel - Relative Radiant Intensity
10 000
1000
100
10
tP = 100 µs
950
λ - Wavelength (nm)
21776-1
10°
20°
30°
40°
1.0
50°
0.9
60°
0.8
70°
ϕ - Angular Displacement
tp = 100 µs
Ie - Radiant Intensity (mW/sr)
1000
Fig. 6 - Radiant Power vs. Forward Current
Fig. 3 - Pulse Forward Current vs. Pulse Duration
IF - Forward Current (A)
10
IF - Forward Current (mA)
16971
80°
0.7
1
0.001
22117
0.01
0.1
1
22132
0.6
0.4
0.2
0
IF - Forward Current (A)
Fig. 5 - Radiant Intensity vs. Forward Current
Document Number: 83160
Rev. 1.0, 13-Oct-10
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
For technical questions, contact: [email protected]
www.vishay.com
3
VSLY5850
Vishay Semiconductors High Speed Infrared Emitting Diode,
850 nm, Surface Emitter Technology
5.75 ± 0.15
PACKAGE DIMENSIONS in millimeters
C
technical drawings
according to DIN
specifications
Chip position
A
5.4 ± 0.3
Ø 5 ± 0.15
8.6 ± 0.3
< 0.7
35.85 ± 0.5
12.88 ± 0.3
7.6 ± 0.15
Parabolic lens
0.75 - 0.12
0.63
2.54 nom.
Drawing-No.: 6.544-5385.01-4
Issue: 2; 08.03.10
1.5 ± 0.25
Aera not plane
0.5
Not indicated tolerances ± 0.1
20531
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4
For technical questions, contact: [email protected]
Document Number: 83160
Rev. 1.0, 13-Oct-10
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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document or by any conduct of Vishay.
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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