RB051LA-40 Diodes Schottky barrier diode RB051LA-40 zExternal dimensions (Unit : mm) 1.5±0.2 0.2± 0.15 0.1 2.0 1.4 CATHODE MARK mold 4.7±0.3 1.4 3.8±0.2 zFeatures 1) Small and Thin power type (PMDT) 2) High reliability. 3) Low IR zLand size figure (Unit : mm) 4.4 zApplications General rectification zStructure Silicon epitaxial planar PMDＴ 2.6±0.2 0.95±0.1 zStructure ROHM : PMDＴ zTaping dimensions (Unit : mm) φ1.55±0.1 0 12.0±0.2 5.0±0.1 5.0±0.1 1.75±0.1 0.25±0.05 5.5±0.05 2.0±0.05 4.0±0.1 φ1.55±0.1 0 4.0±0.1 2.7±0.1 1.25±0.1 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature Limits Symbol 40 VRM 20 VR 3.0 Io IFSM 70 125 Tj -40 to +125 Tstg (*1) Alumina substrate at the time of assemble, TL=90℃ max. Unit V V A A ℃ ℃ zElectrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF1 Min. - Typ. - Max. 0.35 Unit V VF2 IR1 - - 0.45 1 V mA IR2 - - 150 µA Conditions IF=1A IF=3A VR=20V VR=15V 1/3 RB051LA-40 Diodes zElectrical characteristic curves 1000000 1 1000 Ta=125℃ Ta=25℃ Ta=-25℃ 0.1 0.01 10000 Ta=75℃ 1000 Ta=25℃ 100 Ta=-25℃ 10 100 200 300 400 500 10 0 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 15 20 25 30 35 0 40 370 360 AVE:383.2mV 800 700 600 500 400 300 AVE:110.0uA 200 850 840 RESERVE RECOVERY TIME:trr(ns) 1cyc Ifsm 8.3ms 200 AVE:850.8pF 830 820 810 800 Ct DISPERSION MAP 300 30 250 150 100 AVE:186.0A Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 5 0 AVE:11.6ns Ifsm 250 8.3ms 8.3ms 1cyc 200 150 100 50 0 0 1 trr DISPERSION MAP IFSM DISRESION MAP 30 860 IR DISPERSION MAP 300 25 Ta=25℃ f=1MHz VR=0V n=10pcs 870 0 VF DISPERSION MAP 20 880 100 350 15 890 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 380 Ta=25℃ VR=20V n=30pcs 900 REVERSE CURRENT:IR(uA) 390 10 900 1000 Ta=25℃ IF=3A n=30pcs 5 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 400 FORWARD VOLTAGE:VF(mV) 5 PEAK SURGE FORWARD CURRENT:IFSM(A) 0 PEAK SURGE FORWARD CURRENT:IFSM(A) 100 1 0.001 50 f=1MHｚ Ta=125℃ 100000 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=75℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 300 t 200 150 100 50 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 3 Mounted on epoxy board Rth(j-a) 100 Rth(j-c) 10 IM=100mA IF=1A 1 1ms FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 1000 Ifsm 250 2 D=1/2 Sin(θ＝180) 1 DC time 300us 0.1 0.001 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0 1 2 3 4 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 5 2/3 RB051LA-40 Diodes 5 5 AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 6 5 4 D=1/2 3 DC 2 1 Sin(θ＝180) 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 40 4 DC D=1/2 3 Io 0A 0V t T DC VR D=t/T VR=20V Tj=125℃ 2 Sin(θ＝180) 1 0 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 7 4 D=1/2 3 Sin(θ＝180) 2 t T 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 Io 0A 0V 1 0 VR D=t/T VR=20V Tj=125℃ 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 125 30 No break at 30kV ELECTROSTATIC DDISCHARGE TEST ESD(KV) 25 20 15 10 AVE:15.1kV 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1