TSFF5410 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm (T-1¾) Package Description TSFF5410 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant power at wavelength of 870 nm. 94 8390 Features • High modulation bandwidth (23 MHz) • Extra high radiant power and radiant intensity • Low forward voltage • • • • • • • Suitable for high pulse current operation Standard T-1¾ (∅ 5 mm) package Angle of half intensity ϕ = ± 22° Peak wavelength λp = 870 nm High reliability Good spectral matching to Si photodetectors Lead-free device Applications Infrared video data transmission between Camcorder and TV set. Free air data transmission systems with high modulation frequencies or high data transmission rate requirements. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Reverse Voltage Symbol Value Unit VR 5 V IF 100 mA Peak Forward Current tp/T = 0.5, tp = 100 µs IFM 200 mA Surge Forward Current tp = 100 µs Forward current IFSM 1 A Power Dissipation PV 250 mW Junction Temperature Tj 100 °C Operating Temperature Range Tamb - 25 to + 85 °C Storage Temperature Range Tstg - 25 to + 85 °C Tsd 260 °C RthJA 300 K/W Soldering Temperature Thermal Resistance Junction/ Ambient Document Number 81091 Rev. 1.4, 23-Jun-04 t ≤ 5 sec, 2 mm from case www.vishay.com 1 TSFF5410 VISHAY Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward Voltage Typ. Max Unit IF = 100 mA, tp = 20 ms Test condition Symbol VF 1.5 1.8 V IF = 1 A, tp = 100 µs VF 2.3 3.0 V TKVF -2.1 Temp. Coefficient of VF IF = 100 mA Reverse Current VR = 5 V IR Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj Min mV/K 10 125 µA pF Optical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Radiant Intensity Symbol Min Typ. Max Unit IF = 100 mA, tp = 20 ms Test condition Ie 40 70 200 mW/sr IF = 1 A, tp = 100 µs Ie 700 mW/sr Radiant Power IF = 100 mA, tp = 20 ms φe 50 mW Temp. Coefficient of φe IF = 100 mA TKφe -0.35 %/K ϕ ±22 deg IF = 100 mA λp 870 nm Angle of Half Intensity Peak Wavelength Spectral Bandwidth IF = 100 mA ∆λ 40 nm Temp. Coefficient of λp IF = 100 mA TK λp 0.25 nm/K Rise Time IF = 100 mA tr 15 ns Fall Time IF = 100 mA tf 15 ns Cut-Off Frequency IDC = 70 mA, IAC = 30 mA pp fc 23 MHz ∅ 2.1 mm Virtual Source Diameter Typical Characteristics (Tamb = 25 °C unless otherwise specified) 300 200 PV –Power Dissipation (mW) 200 RthJA 150 100 50 I F–Forward Current ( mA ) 175 250 100 75 RthJA 50 0 0 10 20 30 40 50 60 70 80 90 100 Tamb – Ambient Temperature ( °C ) Figure 1. Power Dissipation vs. Ambient Temperature www.vishay.com 2 125 25 0 16647 150 0 16964 10 20 30 40 50 60 70 80 90 100 Tamb – Ambient Temperature ( qC ) Figure 2. Forward Current vs. Ambient Temperature Document Number 81091 Rev. 1.4, 23-Jun-04 TSFF5410 VISHAY Vishay Semiconductors Tamb < 50° t p/ T= 0.01 1000 Φe, rel - Relative Radiant Power 1.25 I F -Forward Current ( mA ) 0.02 0.05 0.1 0.2 0.5 100 0.01 0.1 1.0 10 0.75 0.5 0.25 0 780 100 tp - Pulse Duration ( ms ) 16031 1.0 λ – Wavelength ( nm ) 95 9886 Figure 6. Relative Radiant Power vs. Wavelength Figure 3. Pulse Forward Current vs. Pulse Duration I e rel - Relative Radiant Intensity 0° I F - Forward Current ( mA ) 1000 100 t p = 100 µs t p / T = 0.001 10 980 880 10 ° 20° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 1 0 1 2 3 4 VF - Forward Voltage ( V ) 18873 0.6 0.2 0.4 0.6 1 Φ e, I e -Attenuation (dB) I e - Radiant Intensity ( mW/sr ) 0 Figure 7. Relative Radiant Intensity vs. Angular Displacement 1000.0 100.0 10.0 1.0 18220 0.2 94 8883 Figure 4. Forward Current vs. Forward Voltage 0.1 0.4 1 10 100 Figure 5. Radiant Intensity vs. Forward Current Document Number 81091 Rev. 1.4, 23-Jun-04 -1 -2 -3 IFDC = 70mA IFAC = 30mA pp -4 -5 1000 I F - Forward Current ( mA ) 0 10 14256 100 1000 10000 100000 f - Frequency ( kHz ) Figure 8. Attenuation vs. Frequency www.vishay.com 3 TSFF5410 VISHAY Vishay Semiconductors Package Dimensions in mm 95 11260 www.vishay.com 4 Document Number 81091 Rev. 1.4, 23-Jun-04 TSFF5410 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 81091 Rev. 1.4, 23-Jun-04 www.vishay.com 5