TSAL5300 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs Description TSAL5300 is a high efficiency infrared emitting diode in GaAs technology, molded in clear, bluegrey tinted plastic packages. 96 11505 Features Applications • • • • • • • • • • Infrared remote control units with high power requirements Free air transmission systems Infrared source for optical counters and card readers IR source for smoke detectors Extra high radiant power and radiant intensity Low forward voltage Suitable for high pulse current operation e2 Standard T-1¾ (∅ 5 mm) package Angle of half intensity ϕ = ± 22° Peak wavelength λp = 940 nm High reliability Good spectral matching to Si photodetectors Lead (Pb)-free component Component in accordance to ELV 2000/53/EC, RoHS 2002/95/EC and WEEE 2002/96/EC Parts Table Part Ordering Code TSAL 5300 TSAL5300 Remarks TSAL 5300 TSAL5300-FSZ MOQ 5000 pc (1000 pc / Ammopack) TSAL 5300 TSAL5300-GSZ MOQ 5000 pc (1000 pc / Ammopack) MOQ 4000 pc (Bulk) Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Reverse Voltage Forward current Symbol Value Unit VR 5 V IF 100 mA Peak Forward Current tp/T = 0.5, tp = 100 µs IFM 200 mA Surge Forward Current tp = 100 µs IFSM 1.5 A Power Dissipation PV 210 mW Junction Temperature Tj 100 °C Tamb - 55 to + 100 °C Tstg - 55 to + 100 °C Tsd 260 °C RthJA 350 K/W Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/ Ambient Document Number 81008 Rev. 1.7, 08-Mar-05 t ≤ 5 sec, 2 mm from case www.vishay.com 1 TSAL5300 VISHAY Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Forward Voltage Typ. Max IF = 100 mA, tp = 20 ms Symbol VF 1.35 1.6 V IF = 1 A, tp = 100 µs VF 2.6 3 V TKVF - 1.875 Temp. Coefficient of VF IF = 100 mA Reverse Current VR = 5 V IR Junction capacitance VR = 0, f = 1 MHz, E = 0 Cj Min Unit mV/K 10 25 µA pF Optical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Min Typ. Max Unit Ie 30 45 150 mW/sr IF = 1 A, tp = 100 µs Ie 260 350 mW/sr IF = 100 mA, tp = 20 ms φe 35 mW TKφe - 0.6 %/K ϕ ± 22 deg Radiant Intensity IF = 100 mA, tp = 20 ms Radiant Power Temp. Coefficient of φe IF = 20 mA Angle of Half Intensity Peak Wavelength IF = 100 mA λp 940 nm Spectral Bandwidth IF = 100 mA ∆λ 50 nm Temp. Coefficient of λp IF = 100 mA TKλp 0.2 nm/K Rise Time IF = 100 mA tr 800 ns IF = 1 A tr 500 ns ns Fall Time Virtual Source Diameter IF = 100 mA tf 800 IF = 1 A tf 500 ns method: 63 % encircled energy ∅ 2.3 mm Typical Characteristics (Tamb = 25 °C unless otherwise specified) 250 IF – Forward Current ( mA) PV - Power Dissipation ( mW ) 250 200 150 R thJA 100 50 200 150 100 RthJA 50 0 0 0 94 7957 20 40 60 80 100 Tamb - Ambient Temperature ( °C ) Figure 1. Power Dissipation vs. Ambient Temperature www.vishay.com 2 0 96 11986 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) Figure 2. Forward Current vs. Ambient Temperature Document Number 81008 Rev. 1.7, 08-Mar-05 TSAL5300 VISHAY Vishay Semiconductors 1000 I e – Radiant Intensity ( mW/sr ) I F – Forward Current (A) 101 I FSM = 1 A ( Single Pulse ) tp/T=0.01 0.05 100 0.1 0.5 1.0 10–1 10–2 96 11987 100 10 1 0.1 10–1 100 101 tp – Pulse Duration ( ms ) 102 100 10 4 1000 Φ e - Radiant Power ( mW ) I F - Forward Current ( mA ) 104 Figure 6. Radiant Intensity vs. Forward Current Figure 3. Pulse Forward Current vs. Pulse Duration 10 3 10 2 t p = 100 µ s tp / T = 0.001 10 1 10 0 0 1 2 3 100 10 1 0.1 10 0 4 V F - Forward Voltage ( V ) 13600 13602 10 1 10 2 10 3 I F - Forward Current ( mA ) 10 4 Figure 7. Radiant Power vs. Forward Current Figure 4. Forward Current vs. Forward Voltage 1.6 1.2 1.1 1.2 I F = 10 mA I e rel ; Φe rel V Frel - Relative Forward Voltage 101 102 103 I F – Forward Current ( mA ) 14327 1.0 0.9 I F = 20 mA 0.8 0.4 0.8 0 -10 0 10 0.7 0 94 7990 20 40 60 80 100 T amb - Ambient Temperature ( ° C ) Figure 5. Relative Forward Voltage vs. Ambient Temperature Document Number 81008 Rev. 1.7, 08-Mar-05 94 7993 50 100 140 T amb - Ambient Temperature ( ° C ) Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature www.vishay.com 3 TSAL5300 VISHAY Vishay Semiconductors 0° I e rel - Relative Radiant Intensity Φe rel – Relative Radiant Power 1.25 1.0 0.75 0.5 0.25 I F = 100 mA 0 890 940 Figure 9. Relative Radiant Power vs. Wavelength 20° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 990 λ – Wavelength ( nm ) 14291 10 ° 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8883 Figure 10. Relative Radiant Intensity vs. Angular Displacement Package Dimensions in mm 96 12122 www.vishay.com 4 Document Number 81008 Rev. 1.7, 08-Mar-05 TSAL5300 VISHAY Vishay Semiconductors Tape Dimesions TSAL 5300 Option H ± 0.5 mm Quantity/Box CS21Z 22 1000 FSZ 27 1000 GSZ 29 1000 MSZ 25.5 1000 19314 Figure 11. ∅ 5 mm devices on tape Document Number 81008 Rev. 1.7, 08-Mar-05 www.vishay.com 5 TSAL5300 VISHAY Vishay Semiconductors Ammopack The tape is folded in a concertina arrangement and laid in cardboard box. If components are required with cathode before the anode (Figure 12), then start of tape should be taken from the side of the box marked “–”If components are required with anode before cathode, then tape should be taken from the side of the box marked “+”. Tape Feed Direction Diodes: cathode before anode (Code12) Tape Feed Direction Diodes: anode before cathode (Code21) Label C A B 948667 Figure 12. Tape direction www.vishay.com 6 Document Number 81008 Rev. 1.7, 08-Mar-05 TSAL5300 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81008 Rev. 1.7, 08-Mar-05 www.vishay.com 7 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1