MURS120T3 Series Preferred Devices Surface Mount Ultrafast Power Rectifiers MURS105T3, MURS110T3, MURS115T3, MURS120T3, MURS140T3, MURS160T3 http://onsemi.com Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. Features • • • • • ULTRAFAST RECTIFIERS 1.0 AMPERE 50−600 VOLTS Pb−Free Packages are Available Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling High Temperature Glass Passivated Junction Low Forward Voltage Drop (0.71 to 1.05 Volts Max @ 1.0 A, TJ = 150°C) SMB CASE 403A Mechanical Characteristics • Case: Epoxy, Molded • Weight: 95 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • MARKING DIAGRAM Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Polarity: Polarity Band Indicates Cathode Lead AYW U1x U1 x A Y W = Device Code = A, B, C, D, G or J = Assembley Location = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the table on page 2 of this data sheet. DEVICE MARKING INFORMATION See general marking information in the device marking table on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2004 December, 2004 − Rev. 7 1 Publication Order Number: MURS120T3/D MURS120T3 Series MAXIMUM RATINGS MURS Symbol 105T3 110T3 115T3 Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 150 Average Rectified Forward Current IF(AV) 1.0 @ TL = 155°C 2.0 @ TL = 145°C 1.0 @ TL = 150°C 2.0 @ TL = 125°C A Non−Repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 40 35 A Rating Operating Junction Temperature 120T3 140T3 160T3 Unit 200 400 600 V °C 65 to +175 TJ Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Lead (TL = 25°C) RJL °C/W 13 ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1) (iF = 1.0 A, TJ = 25°C) (iF = 1.0 A, TJ = 150°C) vF Maximum Instantaneous Reverse Current (Note 1) (Rated DC Voltage, TJ = 25°C) (Rated DC Voltage, TJ = 150°C) iR Maximum Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/s) (iF = 0.5 A, iR = 1.0 A, IR to 0.25 A) trr Maximum Forward Recovery Time (iF = 1.0 A, di/dt = 100 A/s, Rec. to 1.0 V) tfr V 0.875 0.71 1.25 1.05 2.0 50 5.0 150 35 25 75 50 25 50 A ns ns 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. DEVICE MARKING AND ORDERING INFORMATION Marking Package Shipping† MURS105T3 U1A SMB 2500 Units/Tape & Reel MURS110T3 U1B SMB 2500 Units/Tape & Reel MURS115T3 U1C SMB 2500 Units/Tape & Reel MURS120T3 U1D SMB 2500 Units/Tape & Reel MURS120T3G U1D SMB (Pb−Free) 2500 Units/Tape & Reel MURS140T3 U1G SMB 2500 Units/Tape & Reel MURS140T3G U1G SMB (Pb−Free) 2500 Units/Tape & Reel MURS160T3 U1J SMB 2500 Units/Tape & Reel MURS160T3G U1J SMB (Pb−Free) 2500 Units/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MURS120T3 Series MURS105T3, MURS110T3, MURS115T3, MURS120T3 10 IR, REVERSE CURRENT ( A) 7.0 5.0 3.0 i , INSTANTANEOUS FORWARD CURRENT (AMPS) F 175°C 100°C 2.0 TC = 25°C 1.0 80 40 20 8.0 4.0 2.0 0.8 0.4 0.2 TJ = 175°C TJ = 100°C 0.08 0.04 0.02 0.008 0.004 0.002 0.7 TJ = 25°C 0 20 40 0.5 60 80 100 120 140 160 180 200 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Typical Reverse Current* 0.3 * The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if applied VR is sufficiently below rated VR. 0.2 50 0.1 45 0.07 NOTE: TYPICAL CAPACITANCE AT 0 V = 45 pF C, CAPACITANCE (pF) 40 0.05 0.03 0.02 35 30 25 20 15 10 0.01 5.0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 0 vF, INSTANTANEOUS VOLTAGE (VOLTS) 10 20 30 40 50 60 70 80 90 100 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 10 RATED VOLTAGE APPLIED RJC = 13°C/W TJ = 175°C 9.0 8.0 7.0 6.0 5.0 4.0 DC 3.0 2.0 SQUARE WAVE 1.0 0 80 90 100 110 120 130 140 150 160 170 180 PF(AV) , AVERAGE POWER DISSIPATION (WATTS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) Figure 3. Typical Capacitance 5.0 TJ = 175°C 4.0 5.0 I (CAPACITANCELOAD) PK 20 I 3.0 10 AV 2.0 DC SQUARE WAVE 1.0 0 0 0.5 1.0 1.5 2.0 TC, CASE TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 4. Current Derating, Case Figure 5. Power Dissipation http://onsemi.com 3 2.5 MURS120T3 Series MURS140T3, MURS160T3 10 IR, REVERSE CURRENT ( A) 7.0 175°C 5.0 100°C 3.0 i , INSTANTANEOUS FORWARD CURRENT (AMPS) F TC = 25°C 2.0 1.0 0.7 400 200 80 40 20 8.0 4.0 2.0 0.8 0.4 0.2 0.08 0.04 0.02 0.008 0.004 TJ = 175°C TJ = 100°C TJ = 25°C 0 100 200 0.5 300 400 500 600 700 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Typical Reverse Current* 0.3 * The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if applied VR is sufficiently below rated VR. 0.2 25 0.1 0.07 NOTE: TYPICAL CAPACITANCE AT 0 V = 24 pF C, CAPACITANCE (pF) 20 0.05 0.03 0.02 15 10 5.0 0.01 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 0 0 vF, INSTANTANEOUS VOLTAGE (VOLTS) 4.0 8.0 12 16 20 24 28 32 36 40 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Typical Forward Voltage 10 RATED VOLTAGE APPLIED RJC = 13°C/W TJ = 175°C 9.0 8.0 7.0 6.0 5.0 4.0 DC 3.0 2.0 SQUARE WAVE 1.0 0 0 20 40 60 80 100 120 140 160 180 200 PF(AV) , AVERAGE POWER DISSIPATION (WATTS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) Figure 8. Typical Capacitance 5.0 4.0 5.0 10 (CAPACITANCE LOAD) I PK 20 I SQUARE WAVE AV 3.0 DC TJ = 175°C 2.0 1.0 0 0 0.5 1.0 1.5 2.0 TC, CASE TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 9. Current Derating, Case Figure 10. Power Dissipation http://onsemi.com 4 2.5 MURS120T3 Series PACKAGE DIMENSIONS SMB DO−214AA CASE 403A−03 ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. S A D INCHES DIM MIN MAX A 0.160 0.180 B 0.130 0.150 C 0.075 0.095 D 0.077 0.083 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.205 0.220 B C K P H J SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MILLIMETERS MIN MAX 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 5.21 5.59 MURS120T3 Series ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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