ONSEMI MURS360T3

MURS320T3, MURS340T3,
MURS360T3
Preferred Devices
Surface Mount
Ultrafast Power Rectifiers
This series employs the state−of−the−art epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for high
voltage, high frequency rectification, or as free wheeling and
protection diodes, in surface mount applications where compact size
and weight are critical to the system.
http://onsemi.com
ULTRAFAST
RECTIFIERS
3.0 AMPERES
200−600 VOLTS
Features
•
•
•
•
•
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Low Forward Voltage Drop
(0.71 to 1.05 Volts Max @ 3.0 A, TJ = 150°C)
Pb−Free Packages are Available
SMC
CASE 403
PLASTIC
Mechanical Characteristics
•
•
•
•
•
•
•
•
•
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 217 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped in 16 mm Tape and Reel, 2500 units per reel
Polarity: Notch in Plastic Body Indicates Cathode Lead
Device Meets MSL1 Requirements
ESD Ratings:
Machine Model, C (> 400 V)
Human Body Model, 3B (> 8000 V)
MARKING DIAGRAM
AYWW
U3x
U3 = Specific Device Code
x = D, G, or J
A = Assembly Location
Y = Year
WW= Work Week
ORDERING INFORMATION
Device
Package
Shipping†
MURS320T3
SMC
2500/Tape & Reel
SMC
(Pb−Free)
2500/Tape & Reel
SMC
2500/Tape & Reel
SMC
(Pb−Free)
2500/Tape & Reel
SMC
2500/Tape & Reel
SMC
(Pb−Free)
2500/Tape & Reel
MURS320T3G
MURS340T3
MURS340T3G
MURS360T3
MURS360T3G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2005
March, 2005 − Rev. 6
1
Publication Order Number:
MURS320T3/D
MURS320T3, MURS340T3, MURS360T3
MAXIMUM RATINGS
Symbol
MURS320T3
MURS340T3
MURS360T3
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
200
400
600
V
Average Rectified Forward Current
IF(AV)
3.0 @ TL = 140°C
4.0 @ TL = 130°C
3.0 @ TL = 130°C
4.0 @ TL = 115°C
3.0 @ TL = 130°C
4.0 @ TL = 115°C
A
Non−Repetitive Peak Surge Current
(Surge applied at rated load conditions
halfwave, single phase, 60 Hz)
IFSM
75
A
TJ
65 to +175
°C
Operating Junction Temperature
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Lead
RJL
°C/W
11
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 3.0 A, TJ = 25°C)
(iF = 4.0 A, TJ = 25°C)
(iF = 3.0 A, TJ = 150°C)
vF
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 150°C)
iR
Maximum Reverse Recovery Time
(iF = 1.0 A, di/dt = 50 A/s)
(iF = 0.5 A, iR = 1.0 A, IREC to 0.25 A)
trr
Maximum Forward Recovery Time
(iF = 1.0 A, di/dt = 100 A/s, Recovery to 1.0 V)
tfr
V
0.875
0.89
0.71
1.25
1.28
1.05
1.25
1.28
1.05
5.0
150
10
250
10
250
35
25
75
50
75
50
25
50
50
A
ns
1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.
http://onsemi.com
2
ns
MURS320T3, MURS340T3, MURS360T3
MURS320T3
IR, REVERSE CURRENT ( A)
5.0
3.0
100°C
2.0
25°C
TJ = 175°C
TJ = 100°C
0.08
0.04
0.02
0.008
0.004
0.002
TJ = 25°C
0
20
40
60
1.0
80
100
120
140
160
180 200
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current*
0.7
* The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these same curves if VR is sufficiently below
rated VR.
0.5
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)
TJ = 175°C
80
40
20
8.0
4.0
2.0
0.8
0.4
0.2
0.3
0.2
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
10
9.0
8.0
I
(CAPACITIVELOAD) PK 20
I
7.0
5.0
AV
10
6.0
5.0
4.0
dc
3.0
SQUARE WAVE
2.0
1.0
0
0
vF, INSTANTANEOUS VOLTAGE (VOLTS)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
90
100
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 1. Typical Forward Voltage
200
10
RATED VOLTAGE APPLIED
RJL = 11°C/W
TJ = 175°C
9.0
8.0
TYPICAL CAPACITANCE AT 0 V = 135 pF
7.0
C, CAPACITANCE (pF)
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
Figure 3. Power Dissipation
6.0
5.0
4.0
3.0
dc
2.0
100
80
60
40
30
20
SQUARE WAVE
1.0
10
0
90
100
110
120
130
140
150
160
170
180
190
0
10
20
30
40
50
60
70
80
TC, CASE TEMPERATURE (°C)
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Current Derating, Case
Figure 5. Typical Capacitance
http://onsemi.com
3
MURS320T3, MURS340T3, MURS360T3
MURS340T3, MURS360T3
400
200
5.0
IR, REVERSE CURRENT ( A)
3.0
100°C
TJ = 175°C
25°C
1.0
TJ = 100°C
0.08
0.04
0.02
TJ = 25°C
0.008
0.004
0.7
0
100
200
0.5
300
400
600
500
700
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Typical Reverse Current*
* The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these same curves if VR is sufficiently below
rated VR.
0.3
0.2
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)
2.0
TJ = 175°C
80
40
20
8.0
4.0
2.0
0.8
0.4
0.2
0.1
0.07
0.05
0.03
0.02
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
10
9.0
8.0
7.0
SQUARE WAVE
6.0
dc
(CAPACITIVE LOADS)
5.0
I
4.0
I
3.0
PK 20
10
5.0
AV
2.0
1.0
0
0
vF, INSTANTANEOUS VOLTAGE (VOLTS)
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
90
100
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 6. Typical Forward Voltage
100
10
9.0
90
8.0
80
C, CAPACITANCE (pF)
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
Figure 8. Power Dissipation
7.0
6.0
5.0
4.0
dc
3.0
SQUARE WAVE
2.0
TYPICAL CAPACITANCE AT 0 V = 75 pF
70
60
50
40
30
20
10
1.0
0
0
70
80
90
100
110
120
130
140
150
160
170
0
10
20
30
40
50
60
70
80
TC, CASE TEMPERATURE (°C)
VR, REVERSE VOLTAGE (VOLTS)
Figure 9. Current Derating, Case
Figure 10. Typical Capacitance
http://onsemi.com
4
MURS320T3, MURS340T3, MURS360T3
PACKAGE DIMENSIONS
SMC
PLASTIC PACKAGE
CASE 403−03
ISSUE D
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
4. 403−01 THRU −02 OBSOLETE, NEW STANDARD
403−03.
A
D
B
INCHES
DIM MIN
MAX
A
0.260
0.280
B
0.220
0.240
C
0.075
0.095
D
0.115
0.121
H 0.0020 0.0060
J
0.006
0.012
K
0.030
0.050
P
0.020 REF
S
0.305
0.320
C
K
P
J
H
SOLDERING FOOTPRINT*
4.343
0.171
3.810
0.150
2.794
0.110
SCALE 4:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
MILLIMETERS
MIN
MAX
6.60
7.11
5.59
6.10
1.90
2.41
2.92
3.07
0.051
0.152
0.15
0.30
0.76
1.27
0.51 REF
7.75
8.13
MURS320T3, MURS340T3, MURS360T3
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
http://onsemi.com
6
For additional information, please contact your
local Sales Representative.
MURS320T3/D