MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. Features • • • • • • • http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 30 VOLTS Guardring for Stress Protection Low Forward Voltage 125°C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Package Designed for Optimal Automated Board Assembly ESD Ratings: Machine Model, C; Human Body Model, 3 Pb−Free Packages are Available SOD−123 CASE 425 STYLE 1 Mechanical Characteristics • Reel Options: MBR130T1 = 3,000 per 7 in reel/8 mm tape • • • • • • MBR130T3 = 10,000 per 13 in reel/8 mm tape Device Marking: S3 Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy, Molded Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds MARKING DIAGRAM 1 S3MG G S3 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping † MBR130T1 SOD−123 3000/Tape & Reel MBR130T1G SOD−123 (Pb−Free) 3000/Tape & Reel MBR130T3 SOD−123 10,000/Tape & Reel MBR130T3G SOD−123 (Pb−Free) 10,000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 July, 2005 − Rev. 2 1 Publication Order Number: MBR130T1/D MBR130T1, MBR130T3 MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 30 V Average Rectified Forward Current (Rated VR) TL = 65°C IF(AV) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) IFSM 5.5 A Storage Temperature Range Tstg −65 to +125 °C Operating Junction Temperature TJ −65 to +125 °C dv/dt 1000 V/ms Symbol Value Unit RθJA 230 °C/W A 1.0 Voltage Rate of Change (Rated VR) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (Note 1) Thermal Resistance, Junction to Lead (Note 1) RθJL 108 °C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 or FR−5 = 3.5 × 1.5 inches using a 1 inch Cu pad. ELECTRICAL CHARACTERISTICS Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 2) (IF = 0.1 A, TJ = 25°C) (IF = 0.7 A, TJ = 25°C) (IF = 1.0 A, TJ = 25°C) VF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25°C) (VR = 5 V, TC = 25°C) IR Typ Max − − 0.47 0.35 0.45 − V mA 60 10 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 Unit MBR130T1, MBR130T3 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 1 TJ = 125°C 75°C 0.1 0.2 0.25 0.3 0.35 25°C 0.4 0.45 0.5 0.55 0.6 1 TJ = 125°C 75°C 0.1 0.65 0.2 0.25 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.4 0.45 0.5 0.55 0.6 0.65 Figure 2. Typical Forward Voltage 0.01 200 TJ = 125°C 180 0.001 C, CAPACITANCE (pF) IR, REVERSE CURRENT (AMPS) 0.35 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Maximum Forward Voltage 75°C 0.0001 0.00001 25°C 0.000001 160 140 120 100 80 60 40 20 0.0000001 0 5 10 15 20 25 VR, REVERSE VOLTAGE (VOLTS) 30 0 0 Figure 3. Typical Reverse Current 1.8 1.6 dc 1.4 RATED VOLTAGE APPLIED 1.2 SQUARE WAVE 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 TL, LEAD TEMPERATURE (°C) 5 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) 35 Figure 4. Typical Capacitance PF(AV), AVERAGE FORWARD POWER DISSIPATION (WATTS) IF(AV), AVERAGE FORWARD CURRENT (AMPS) 0.3 25°C 120 0.9 0.8 0.7 SQUARE WAVE 0.6 dc 0.5 0.4 0.3 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 6. Forward Power Dissipation Figure 5. Current Derating, Lead, RqJL = 1085C/W http://onsemi.com 3 MBR130T1, MBR130T3 PACKAGE DIMENSIONS SOD−123 CASE 425−04 ISSUE E D ÂÂÂÂ ÂÂÂÂ ÂÂÂÂ A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A1 1 HE DIM A A1 b c D E HE L E L 2 MIN 0.037 0.000 0.020 −−− 0.055 0.100 0.140 0.010 INCHES NOM 0.046 0.002 0.024 −−− 0.063 0.106 0.145 −−− MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 −−− STYLE 1: PIN 1. CATHODE 2. ANODE C b MILLIMETERS MIN NOM MAX 0.94 1.17 1.35 0.00 0.05 0.10 0.51 0.61 0.71 −−− −−− 0.15 1.40 1.60 1.80 2.54 2.69 2.84 3.56 3.68 3.86 −−− −−− 0.25 SOLDERING FOOTPRINT* ÉÉ ÉÉ ÉÉ 0.91 0.036 2.36 0.093 4.19 0.165 ÉÉ ÉÉ ÉÉ SCALE 10:1 1.22 0.048 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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