HFA1106 ® September 1998 NT UCT ROD ACEME P E L T r at REP 05 OLE ente OBS ENDED, HFA11pport C m/tsc 2 OMMFA110 nical Su tersil.co H REC ch ww.in e T w ur ct o SIL or R onta or c 8-INTE 1-88 315MHz, Low Power, Video Operational Amplifier with Compensation Pin Features Description • Compensation Pin for Bandwidth Limiting The HFA1106 is a high speed, low power current feedback operational amplifier built with Intersil’s proprietary complementary bipolar UHF-1 process. This amplifier features a compensation pin connected to the internal high impedance node, which allows for implementation of external clamping or bandwidth limiting. • Lower Lot-to-Lot Variability With External Compensation • High Input Impedance . . . . . . . . . . . . . . . . . . . . . . . 1MΩ • Differential Gain . . . . . . . . . . . . . . . . . . . . . . . . . . 0.02% • Differential Phase . . . . . . . . . . . . . . . . . . 0.05 Degrees • Wide -3dB Bandwidth . . . . . . . . . . . . . . . . . . . . 315MHz • Very Fast Slew Rate. . . . . . . . . . . . . . . . . . . . . . 700V/µs • Low Supply Current. . . . . . . . . . . . . . . . . . . . . . . 5.8mA • Gain Flatness (to 100MHz) . . . . . . . . . . . . . . . . . ±0.1dB Applications • Noise Critical Applications • Professional Video Processing Bandwidth limiting is accomplished by connecting a capacitor (CCOMP) and series damping resistor (RCOMP) from pin 8 to ground. Amplifier performance for various values of CCOMP is documented in the Electrical Specifications. The HFA1106 is ideal for noise critical wideband applications. Not only can the bandwidth be limited to minimize broadband noise, the HFA1106 is optimized for lower feedback resistors (R F = 100Ω for AV = +2) than most current feedback amplifiers. The low feedback resistor reduces the inverting input noise current contribution to total output noise, while reducing DC errors as well. Please see the “Application Information” section for details. Part Number Information • Medical Imaging PART NUMBER (BRAND) • Video Digitizing Boards/Systems • Radar/IF Processing • Hand Held and Miniaturized RF Equipment • Battery Powered Communications • Flash A/D Drivers TEMP. RANGE (oC) PKG. NO. PACKAGE HFA1106IP -40 to 85 8 Ld PDIP E8.3 HFA1106IB (H1106I) -40 to 85 8 Ld SOIC M8.15 HFA11XXEVAL • Oscilloscopes and Analyzers DIP Evaluation Board for High Speed Op Amps Pinout HFA1106 (PDIP, SOIC) TOP VIEW NC 1 -IN 2 - 8 COMP 7 V+ + +IN 3 6 OUT V- 4 5 NC CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2002. All Rights Reserved 3-28 File Number 3922.2 HFA1106 Absolute Maximum Ratings Thermal Information Voltage Between V+ and V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11V DC Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VSUPPLY Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V Output Current (Note 1) . . . . . . . . . . . . . . . . Short Circuit Protected 30mA Continuous 60mA ≤ 50% Duty Cycle ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >600V Thermal Resistance (Typical, Note 2) θJA (oC/W) PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 SOIC Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170 Maximum Junction Temperature (Die Only) . . . . . . . . . . . . . . . 175oC Maximum Junction Temperature (Plastic Package) . . . . . . . . 150oC Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . 300oC (SOIC - Lead Tips Only) Operating Conditions Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Output is short circuit protected to ground. Brief short circuits to ground will not degrade reliability; however, continuous (100% duty cycle) output current must not exceed 30mA for maximum reliability. 2. θJA is measured with the component mounted on an evaluation PC board in free air. Electrical Specifications VSUPPLY = ±5V, AV = +1, RF = 510Ω, CCOMP = 0pF, RL = 100Ω , Unless Otherwise Specified PARAMETER TEST CONDITIONS (NOTE 3) TEST LEVEL TEMP. (oC) MIN TYP MAX UNITS INPUT CHARACTERISTICS Input Offset Voltage A 25 - 2 5 mV A Full - 3 8 mV B Full - 1 10 µV/oC ∆VCM = ±1.8V A 25 47 50 - dB ∆VCM = ±1.8V A 85 45 48 - dB ∆VCM = ±1.2V A -40 45 48 - dB ∆VPS = ±1.8V A 25 50 54 - dB ∆VPS = ±1.8V A 85 47 50 - dB ∆VPS = ±1.2V A -40 47 50 - dB A 25 - 6 15 µA A Full - 10 25 µA B Full - 5 60 nA/ oC ∆VPS = ±1.8V A 25 - 0.5 1 µA/V ∆VPS = ±1.8V A 85 - 0.8 3 µA/V ∆VPS = ±1.2V A -40 - 0.8 3 µA/V ∆VCM = ±1.8V A 25 0.8 1.2 - MΩ Average Input Offset Voltage Drift Input Offset Voltage Common-Mode Rejection Ratio Input Offset Voltage Power Supply Rejection Ratio Non-Inverting Input Bias Current Non-Inverting Input Bias Current Drift Non-Inverting Input Bias Current Power Supply Sensitivity Non-Inverting Input Resistance ∆VCM = ±1.8V A 85 0.5 0.8 - MΩ ∆VCM = ±1.2V A -40 0.5 0.8 - MΩ A 25 - 2 7.5 µA A Full - 5 15 µA B Full - 60 200 nA/ oC ∆VCM = ±1.8V A 25 - 3 6 µA/V ∆VCM = ±1.8V A 85 - 4 8 µA/V ∆VCM = ±1.2V A -40 - 4 8 µA/V ∆VPS = ±1.8V A 25 - 2 5 µA/V ∆VPS = ±1.8V A 85 - 4 8 µA/V ∆VPS = ±1.2V A -40 - 4 8 µA/V Inverting Input Bias Current Inverting Input Bias Current Drift Inverting Input Bias Current Common-Mode Sensitivity Inverting Input Bias Current Power Supply Sensitivity 3-29 HFA1106 VSUPPLY = ±5V, AV = +1, RF = 510Ω, CCOMP = 0pF, RL = 100Ω , Unless Otherwise Specified (Contin- Electrical Specifications (NOTE 3) TEST LEVEL TEMP. (oC) MIN TYP MAX UNITS Inverting Input Resistance C 25 - 60 - Ω Input Capacitance C 25 - 1.6 - pF Input Voltage Common Mode Range (Implied by VIO CMRR, +RIN, and -IBIAS CMS Tests) A 25, 85 ±1.8 ±2.4 - V A -40 ±1.2 ±1.7 - V f = 100kHz B 25 - 3.5 - nV/√Hz Non-Inverting Input Noise Current Density f = 100kHz B 25 - 2.5 - pA/√Hz Inverting Input Noise Current Density f = 100kHz B 25 - 20 - pA/√Hz AV = -1 C 25 - 500 - kΩ PARAMETER TEST CONDITIONS Input Noise Voltage Density TRANSFER CHARACTERISTICS Open Loop Transimpedance Gain AC CHARACTERISTICS AV = +2, RF = 100Ω, RCOMP = 51Ω, Unless Otherwise Specified -3dB Bandwidth (AV = +1, RF = 150Ω, VOUT = 0.2VP-P) CC = 0pF B 25 250 315 - MHz CC = 2pF B 25 140 170 - MHz CC = 5pF B 25 65 80 - MHz -3dB Bandwidth (AV = +2, VOUT = 0.2VP-P) CC = 0pF B 25 185 245 - MHz CC = 2pF B 25 110 140 - MHz CC = 5pF B 25 55 70 - MHz ±0.1dB Flat Bandwidth (AV = +1, RF = 150Ω, VOUT = 0.2VP-P) CC = 0pF B 25 45 65 - MHz CC = 2pF B 25 25 40 - MHz CC = 5pF B 25 13 17 - MHz ±0.1dB Flat Bandwidth (AV = +2, VOUT = 0.2VP-P) CC = 0pF B 25 60 100 - MHz CC = 2pF B 25 15 30 - MHz CC = 5pF B 25 11 14 - MHz A Full 1 - - V/V 25 ±3 ±3.4 - V Minimum Stable Gain OUTPUT CHARACTERISTICS AV = +2, RF = 100Ω, RCOMP = 51Ω, Unless Otherwise Specified Output Voltage Swing AV = -1, RF = 510Ω A A Full ±2.8 ±3 - V Output Current AV = -1, RL = 50Ω, RF = 510Ω A 25, 85 50 60 - mA A -40 28 42 - mA Closed Loop Output Impedance DC B 25 - 0.07 - Ω Output Short Circuit Current AV = -1 B 25 - 90 - mA Second Harmonic Distortion (10MHz, VOUT = 2VP-P) CC = 0pF B 25 -45 -53 - dBc CC = 2pF B 25 -42 -48 - dBc CC = 5pF B 25 -38 -44 - dBc CC = 0pF B 25 -50 -57 - dBc CC = 2pF B 25 -48 -56 - dBc CC = 5pF B 25 -48 -56 - dBc CC = 0pF B 25 -42 -46 - dBc CC = 2pF B 25 -38 -42 - dBc CC = 5pF B 25 -34 -38 - dBc CC = 0pF B 25 -46 -57 - dBc CC = 2pF B 25 -52 -57 - dBc CC = 5pF B 25 -50 -57 - dBc Third Harmonic Distortion (10MHz, VOUT = 2VP-P) Second Harmonic Distortion (20MHz, VOUT = 2VP-P) Third Harmonic Distortion (20MHz, VOUT = 2VP-P) 3-30 HFA1106 Electrical Specifications VSUPPLY = ±5V, AV = +1, RF = 510Ω, CCOMP = 0pF, RL = 100Ω , Unless Otherwise Specified (Contin- PARAMETER TRANSIENT CHARACTERISTICS TEST CONDITIONS (NOTE 3) TEST LEVEL TEMP. (oC) MIN TYP MAX UNITS AV = +2, RF = 100Ω, R COMP = 51Ω , Unless Otherwise Specified Rise and Fall Times (VOUT = 0.5VP-P, AV = +1, RF = 150Ω) Rise and Fall Times (VOUT = 0.5VP-P, AV = +2) CC = 0pF B 25 - 2.6 2.9 ns CC = 2pF B 25 - 3.7 4.2 ns CC = 5pF B 25 - 5.2 6.2 ns CC = 0pF B 25 - 2.7 3.2 ns CC = 2pF B 25 - 3.9 4.4 ns CC = 5pF B 25 - 5.9 6.9 ns B 25 - 1.5 4 % Overshoot (Note 4) VOUT = 250mVP-P (AV = +1, RF = 150Ω, VIN tRISE = 2.5ns) VOUT = 2VP-P Overshoot (Note 4) (AV = +2, VIN tRISE = 2.5ns) Slew Rate (VOUT = 4VP-P, AV = +1, RF = 150Ω) Slew Rate (VOUT = 5VP-P, AV = +2) B 25 - 6 10 % VOUT = 0V to 2V B 25 - 4 7.5 % VOUT = 250mVP-P B 25 - 2 5 % VOUT = 2VP-P B 25 - 6.5 12 % VOUT = 0V to 2V B 25 - 2.5 7.5 % +SR, CC = 0pF B 25 580 680 - V/µs -SR, C C = 0pF B 25 400 545 - V/µs +SR, CC = 2pF B 25 470 530 - V/µs -SR, C C = 2pF B 25 300 410 - V/µs +SR, CC = 5pF B 25 320 365 - V/µs -SR, C C = 5pF B 25 200 300 - V/µs +SR, CC = 0pF B 25 750 910 - V/µs -SR, C C = 0pF B 25 500 720 - V/µs +SR, CC = 2pF B 25 550 730 - V/µs -SR, C C = 2pF B 25 350 520 - V/µs +SR, CC = 5pF B 25 380 485 - V/µs -SR, C C = 5pF B 25 250 375 - V/µs Settling Time (VOUT = +2V to 0V Step, CC = 0pF to 5pF) To 0.1% B 25 - 26 35 ns To 0.05% B 25 - 33 43 ns To 0.02% B 25 - 49 75 ns Overdrive Recovery Time VIN = ±2V B 25 - 8.5 - ns VIDEO CHARACTERISTICS AV = +2, RF = 100Ω, RCOMP = 51Ω, Unless Otherwise Specified CC = 0pF B 25 - 0.02 - % CC = 5pF B 25 - 0.02 - % CC = 0pF B 25 - 0.05 - Degrees CC = 5pF B 25 - 0.07 - Degrees Power Supply Range C 25 ±4.5 - ±5.5 V Power Supply Current A 25 - 5.8 6.1 mA A Full - 5.9 6.3 mA Differential Gain (f = 3.58MHz, RL = 150Ω) Differential Phase (f = 3.58MHz, RL = 150Ω) POWER SUPPLY CHARACTERISTICS NOTES: 3. Test Level: A. Production Tested; B. Typical or Guaranteed Limit Based on Characterization; C. Design Typical for Information Only. 4. Undershoot dominates for output signal swings below GND (e.g. 2VP-P) yielding a higher overshoot limit compared to the VOUT = 0V to 2V condition. 3-31 HFA1106 Application Information Optimum Feedback Resistor All current feedback amplifiers (CFAs) require a feedback resistor (R F) even for unity gain applications, and RF in conjunction with the internal compensation capacitor sets the dominant pole of the frequency response. Thus the amplifier’s bandwidth is inversely proportional to RF. The HFA1106 design is optimized for RF = 150Ω at a gain of +1. Decreasing RF decreases stability resulting in excessive peaking and overshoot - Note: Capacitive feedback causes the same problems due to the feedback impedance decrease at higher frequencies. At higher gains, however, the amplifier is more stable, so RF can be decreased in a trade-off of stability for bandwidth (e.g., RF = 100Ω for AV = +2). EN = 456µ VRMS FIGURE 1. HFA1105 NOISE PERFORMANCE, AV = +2, RF = 510Ω Why Use Externally Compensated Amplifiers? Externally compensated op amps were originally developed to allow operation at gains below the amplifier’s minimum stable gain. This enabled development of non-unity gain stable op amps with very high bandwidth and slew rates. Users needing lower closed loop gains could stabilize the amplifier with external compensation if the associated performance decrease was tolerable. With the advent of CFAs, unity gain stability and high performance are no longer mutually exclusive, so why offer unity gain stable op amps with compensation pins? The main reason for external compensation is to allow users to tailor the amplifier’s performance to their specific system needs. Bandwidth can be limited to the exact value required, thereby eliminating excess bandwidth and its associated noise. A compensated op amp is also more predictable; lower lot-to-lot variation requires less system overdesign to cover process variability. Finally, access to the internal high impedance node allows users to implement external output limiting or allows for stabilizing the amplifier when driving large capacitive loads. Noise Advantages - Uncompensated The HFA1106 delivers lower broadband noise even without an external compensation capacitor. Package capacitance present at the Comp pin stabilizes the op amp, so lower value feedback resistors can be used. A smaller value RF minimizes the noise voltage contribution of the amplifier’s inverting input noise current - INI x R F , usually a large contributor on CFAs - and minimizes the resistor’s thermal noise contribution (4KTRF). Figure 1 details the HFA1105 broadband noise performance in its recommended configuration of A V = +2, and RF = 510Ω. Adding a Comp pin to the HFA1105 (thereby creating the HFA1106) yields the 23% noise reduction shown in Figure 2. In both cases, the scope bandwidth, 100MHz, limits the measurement range to prevent amplifier bandwidth differences from affecting the results. EN = 350µ VRMS FIGURE 2. HFA1106 NOISE PERFORMANCE, UNCOMPENSATED, AV = +2, RF = 100Ω Offset Advantage An added advantage of the lower value RF is a smaller DC output offset. The op amp’s inverting input bias current (IBI) flows through the feedback resistor and generates an offset voltage error defined by: V E = I BI x R F ; and V OS = AV ( ± VIO ) ± V E Reducing R F reduces these errors. Bandwidth Limiting The HFA1106 bandwidth may be limited by connecting a resistor, RCOMP (required to damp the interaction between the compensation capacitor and the package parasitics), and capacitor, C COMP , in series from pin 8 to GND. Typical performance characteristics for various C COMP values are listed in the specification table. The HFA1106 is already unity gain stable, so the main reason for limiting the bandwidth is to reduce the broadband noise. Noise Advantages - Compensated System noise reduction is maximized by limiting the op amp to the bandwidth required for the application. Noise increases as the square root of the bandwidth increase (4x bandwidth increase yields 2x noise increase), so eliminating excess 3-32 HFA1106 bandwidth significantly reduces system noise. Figure 3 illustrates the noise performance of the HFA1106 with its bandwidth limited to 40MHz by a 10pF CCOMP. As expected the noise decreases by approximately 37% (100% x (1-√40MHz/100MHz)) compared with Figure 2. The decrease is an even more dramatic 48% versus the HFA1105 noise level in Figure 1. enough, instability. To reduce this capacitance, the designer should remove the ground plane under traces connected to -IN, and keep connections to -IN as short as possible. An example of a good high frequency layout is the Evaluation Board shown in Figure 4. Evaluation Board The performance of the HFA1106 may be evaluated using the HFA11XX Evaluation Board. Figure 4 details the evaluation board layout and schematic. Connecting R COMP and C COMP in series from socket pin 8 to the GND plane compensates the op amp. Cutting the trace from pin 8 to the VH connector removes the stray parallel capacitance, which would otherwise affect the evaluation. Additionally, the 500Ω feedback and gain setting resistors should be changed to the proper value for the gain being evaluated. EN = 236µ VRMS To order evaluation boards (part number HFA11XXEVAL), please contact your local sales office. FIGURE 3. HFA1106 NOISE PERFORMANCE, COMPENSATED, A V = +2, RF = 100Ω, CC = 10PF Additionally, compensating the HFA1106 allows the use of a lower value RF for a given gain. The decreased bandwidth due to CCOMP keeps the amplifier stable by offsetting the increased bandwidth from the lower RF . As noted previously, a lower value RF provides the double benefit of reduced DC errors and lower total noise. VH 1 +IN Less Lot-to-Lot Variability OUT External compensation provides another advantage by allowing designers to set the op amp’s performance with a precision external component. On-chip compensation capacitors can vary by 10-20% over the process extremes. A precise external capacitor dominates the on-chip compensation for consistent lot-to-lot performance and more robust designs. Compensating high frequency amplifiers to lower bandwidths can simplify design tasks and ensure long term manufacturability. VL V+ VGND TOP LAYOUT PC Board Layout This amplifier’s frequency response depends greatly on the care taken in designing the PC board. The use of low inductance components such as chip resistors and chip capacitors is strongly recommended, while a solid ground plane is a must! BOTTOM LAYOUT Attention should be given to decoupling the power supplies. A large value (10µF) tantalum in parallel with a small value (0.1µF) chip capacitor works well in most cases. Terminated microstrip signal lines are recommended at the device’s input and output connections. Capacitance, parasitic or planned, connected to the output must be minimized, compensated for by increasing CCOMP , or isolated by a series output resistor. Care must also be taken to minimize the capacitance to ground at the amplifier’s inverting input (-IN), as this capacitance causes gain peaking, pulse overshoot, and if large 3-33 510 510 VH R1 50Ω IN 10µF 1 8 2 7 3 6 4 5 10µF 0.1µF +5V 50Ω OUT GND 0.1µF -5V VL GND FIGURE 4. EVALUATION BOARD SCHEMATIC AND LAYOUT HFA1106 Typical Performance Curves AV = +1 CC = 0pF, R F = 150Ω 120 80 OUTPUT VOLTAGE (mV) OUTPUT VOLTAGE (mV) 120 VSUPPLY = ±5V, TA = 25oC, R L = 100Ω, Unless Otherwise Specified 40 0 -40 -80 -120 AV = +2 CC = 0pF, RF = 100Ω 80 40 0 -40 -80 -120 TIME (10ns/DIV.) TIME (10ns/DIV.) FIGURE 5. SMALL SIGNAL PULSE RESPONSE AV = +1 CC = 0pF, RF = 150Ω 1.2 0.8 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) 1.2 FIGURE 6. SMALL SIGNAL PULSE RESPONSE 0.4 0 -0.4 -0.8 AV = +2 CC = 0pF, R F = 100Ω 0.8 0.4 0 -0.4 -0.8 -1.2 -1.2 TIME (10ns/DIV.) TIME (10ns/DIV.) FIGURE 7. LARGE SIGNAL PULSE RESPONSE AV = +1 CC = 0pF, RF = 150Ω 3 2 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) 3 FIGURE 8. LARGE SIGNAL PULSE RESPONSE 1 0 -1 -2 AV = +2 CC = 0pF, RF = 100Ω 2 1 0 -1 -2 -3 -3 TIME (10ns/DIV.) TIME (10ns/DIV.) FIGURE 9. LARGE SIGNAL PULSE RESPONSE FIGURE 10. LARGE SIGNAL PULSE RESPONSE 3-34 HFA1106 CC = 0pF VOUT = 200mVP-P 3 0 AV = +1 GAIN AV = +2 -3 -6 0 PHASE AV = +1 AV = +2 45 90 135 180 1 10 FREQUENCY (MHz) 100 NORMALIZED GAIN (dB) VSUPPLY = ±5V, TA = 25oC, R L = 100Ω, Unless Otherwise Specified (Continued) PHASE (DEGREES) NORMALIZED GAIN (dB) Typical Performance Curves CC = 0pF VOUT = 200mVP-P 0.1 0 AV = +2 -0.1 -0.2 -0.3 225 500 1 FIGURE 11. FREQUENCY RESPONSE GAIN (dB) GAIN -6 0 PHASE 45 90 135 180 10 100 FREQUENCY (MHz) 500 AV = +1 CC = 0pF, RF = 150Ω VOUT = 200mVP-P 0.1 -3 1 100 0 -0.1 -0.2 -0.3 PHASE (DEGREES) GAIN (dB) 0 10 FREQUENCY (MHz) FIGURE 12. GAIN FLATNESS AV = +1 CC = 0pF, RF = 150Ω VOUT = 200mVP-P 3 AV = +1 225 500 1 FIGURE 13. FREQUENCY RESPONSE (12 UNITS, 4 RUNS) 10 FREQUENCY (MHz) 100 FIGURE 14. GAIN FLATNESS (12 UNITS, 4 RUNS) 3-35 500 HFA1106 VSUPPLY = ±5V, TA = 25oC, R L = 100Ω, Unless Otherwise Specified (Continued) AV = +2 CC = 0pF, RF = 100Ω VOUT = 200mVP-P 3 0 GAIN -3 -6 45 90 135 180 1 10 100 FREQUENCY (MHz) PHASE (DEGREES) 0 PHASE NORMALIZED GAIN (dB) NORMALIZED GAIN (dB) Typical Performance Curves -0.1 -0.2 -0.3 10 FREQUENCY (MHz) 100 FIGURE 16. GAIN FLATNESS (12 UNITS, 4 RUNS) A V = +1 C C = 2pF, R F = 150Ω 120 OUTPUT VOLTAGE (mV) OUTPUT VOLTAGE (mV) 0 1 80 40 0 -40 -80 AV = +2 CC = 2pF, RF = 100Ω 80 40 0 -40 -80 -120 -120 TIME (10ns/DIV.) TIME (10ns/DIV.) FIGURE 17. SMALL SIGNAL PULSE RESPONSE 1.2 FIGURE 18. SMALL SIGNAL PULSE RESPONSE AV = +1 CC = 2pF, R F = 150Ω 1.2 0.8 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) AV = +2 CC = 0pF, RF = 100Ω VOUT = 200mVP-P 0.1 225 500 FIGURE 15. FREQUENCY RESPONSE (12 UNITS, 4 RUNS) 120 0.2 0.4 0 -0.4 -0.8 -1.2 AV = +2 CC = 2pF, RF = 100Ω 0.8 0.4 0 -0.4 -0.8 -1.2 TIME (10ns/DIV.) TIME (10ns/DIV.) FIGURE 19. LARGE SIGNAL PULSE RESPONSE FIGURE 20. LARGE SIGNAL OUTPUT VOLTAGE 3-36 500 HFA1106 Typical Performance Curves AV = +1 CC = 2pF, RF = 150Ω AV = +2 CC = 2pF, RF = 100Ω 3 2 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) 3 VSUPPLY = ±5V, TA = 25oC, R L = 100Ω, Unless Otherwise Specified (Continued) 1 0 -1 -2 -3 2 1 0 -1 -2 -3 TIME (10ns/DIV.) TIME (10ns/DIV.) 0 GAIN AV = +1 -3 AV = +2 AV = +1 PHASE 0 45 90 AV = +2 135 180 1 10 FREQUENCY (MHz) 100 PHASE (DEGREES) -6 NORMALIZED GAIN (dB) FIGURE 22. LARGE SIGNAL PULSE RESPONSE CC = 2pF VOUT = 200mVP-P 3 CC = 2pF VOUT = 200mVP-P 0.1 0 AV = +1 -0.1 -0.2 AV = +2 -0.3 225 500 1 FIGURE 23. FREQUENCY RESPONSE 10 100 FREQUENCY (MHz) 500 FIGURE 24. GAIN FLATNESS AV = +1, CC = 2pF, RF = 150Ω VOUT = 200mVP-P 3 AV = +1, C C = 2pF, RF = 150Ω VOUT = 200mVP-P 0.1 0 GAIN (dB) GAIN (dB) NORMALIZED GAIN (dB) FIGURE 21. LARGE SIGNAL PULSE RESPONSE -3 -6 0 -0.1 -0.2 -0.3 -9 1 10 100 FREQUENCY (MHz) 1 500 FIGURE 25. FREQUENCY RESPONSE (12 UNITS, 4 RUNS) 10 FREQUENCY (MHz) 100 FIGURE 26. GAIN FLATNESS (12 UNITS, 4 RUNS) 3-37 500 HFA1106 AV = +2, CC = 2pF, RF = 100Ω 3 VOUT = 200mVP-P 0 GAIN -3 -6 0 PHASE 45 90 135 180 1 10 FREQUENCY (MHz) 100 NORMALIZED GAIN (dB) VSUPPLY = ±5V, TA = 25oC, R L = 100Ω, Unless Otherwise Specified (Continued) PHASE (DEGREES) NORMALIZED GAIN (dB) Typical Performance Curves -0.1 -0.2 -0.3 1 10 FREQUENCY (MHz) AV = +1 CC = 5pF, R F = 150Ω 120 80 40 0 -40 -80 AV = +2 CC = 5pF, RF = 100Ω 80 40 0 -40 -80 -120 -120 TIME (10ns/DIV.) TIME (10ns/DIV.) FIGURE 29. SMALL SIGNAL PULSE RESPONSE FIGURE 30. SMALL SIGNAL PULSE RESPONSE AV = +1 CC = 5pF, R F = 150Ω 1.2 0.8 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) 1.2 100 FIGURE 28. GAIN FLATNESS (12 UNITS, 4 RUNS) OUTPUT VOLTAGE (mV) OUTPUT VOLTAGE (mV) 0 225 500 FIGURE 27. FREQUENCY RESPONSE (12 UNITS, 4 RUNS) 120 AV = +2, CC = 2pF, RF = 100Ω VOUT = 200mVP-P 0.1 0.4 0 -0.4 -0.8 -1.2 AV = +2 CC = 5pF, R F = 100Ω 0.8 0.4 0 -0.4 -0.8 -1.2 TIME (10ns/DIV.) TIME (10ns/DIV.) FIGURE 31. LARGE SIGNAL PULSE RESPONSE FIGURE 32. LARGE SIGNAL PULSE RESPONSE 3-38 500 HFA1106 Typical Performance Curves 3 VSUPPLY = ±5V, TA = 25oC, R L = 100Ω, Unless Otherwise Specified (Continued) AV = +1 CC = 5pF, R F = 150Ω OUTPUT VOLTAGE (V) 2 OUTPUT VOLTAGE (V) AV = +2 CC = 5pF, R F = 100Ω 3 1 0 -1 -2 -3 2 1 0 -1 -2 -3 TIME (10ns/DIV.) TIME (10ns/DIV.) CC = 5pF VOUT = 200mVP-P 3 0 GAIN -3 A V = +1 AV = +2 -6 0 PHASE AV = +1 45 90 AV = +2 135 180 1 10 FREQUENCY (MHz) 100 NORMALIZED GAIN (dB) FIGURE 34. LARGE SIGNAL PULSE RESPONSE PHASE (DEGREES) NORMALIZED GAIN (dB) FIGURE 33. LARGE SIGNAL PULSE RESPONSE CC = 5pF VOUT = 200mVP-P 0.1 0 -0.1 AV = +1 -0.2 AV = +2 -0.3 225 500 1 10 FREQUENCY (MHz) FIGURE 35. FREQUENCY RESPONSE GAIN (dB) 0.1 -3 -6 0 45 90 135 180 1 10 FREQUENCY (MHz) 100 PHASE (DEGREES) GAIN (dB) 0 500 FIGURE 36. GAIN FLATNESS AV = +1 CC = 5pF, RF = 150Ω VOUT = 200mVP-P 3 100 225 500 0 AV = +1 CC = 5pF, RF = 150Ω VOUT = 200mVP-P -0.1 -0.2 -0.3 1 FIGURE 37. FREQUENCY RESPONSE (12 UNITS, 4 RUNS) 10 FREQUENCY (MHz) 100 FIGURE 38. GAIN FLATNESS (12 UNITS, 4 RUNS) 3-39 500 HFA1106 AV = +2, CC = 5pF, RF = 100Ω VOUT = 200mVP-P 3 0 -3 -6 0 45 90 135 180 1 10 FREQUENCY (MHz) NORMALIZED GAIN (dB) VSUPPLY = ±5V, TA = 25oC, R L = 100Ω, Unless Otherwise Specified (Continued) PHASE (DEGREES) NORMALIZED GAIN (dB) Typical Performance Curves VOUT = 200mVP-P 0 -0.1 -0.2 -0.3 225 500 100 AV = +2, CC = 5pF, RF = 100Ω 0.1 1 FIGURE 39. FREQUENCY RESPONSE (12 UNITS, 4 RUNS) 10 FREQUENCY (MHz) 100 500 FIGURE 40. GAIN FLATNESS (12 UNITS, 4 RUNS) 4.0 0.15 OUTPUT VOLTAGE (V) SETTLING ERROR (%) AV = -1 AV = +2 RF = 100Ω VOUT = 2V CC = 2pF 0.1 0.05 CC = 0pF 0 -0.05 -0.1 0 10 20 30 40 50 60 70 80 90 3.5 RL = 100Ω +VOUT RL = 50Ω |-VOUT| 3.0 +VOUT 2.5 2 -100 100 |-VOUT| -50 0 50 100 TEMPERATURE (oC) TIME (ns) FIGURE 41. SETTLING RESPONSE FIGURE 42. OUTPUT VOLTAGE vs TEMPERATURE 3-40 150 HFA1106 Typical Performance Curves VSUPPLY = ±5V, TA = 25oC, R L = 100Ω, Unless Otherwise Specified (Continued) 6.1 SUPPLY CURRENT (mA) 6.0 5.9 5.8 5.7 5.6 5.5 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 SUPPLY VOLTAGE (±V) FIGURE 43. SUPPLY CURRENT vs SUPPLY VOLTAGE Die Characteristics DIE DIMENSIONS: 59 mils x 58.2 mils x 19 mils 1500µm x 1480µm x 483µm METALLIZATION: Type: Metal 1: AICu(2%)/TiW Thickness: Metal 1: 8kÅ ±0.4kÅ Type: Metal 2: AICu(2%) Thickness: Metal 2: 16kÅ ±0.8kÅ PASSIVATION: Type: Nitride Thickness: 4kÅ ±0.5kÅ TRANSISTOR COUNT: 75 SUBSTRATE POTENTIAL (Powered Up): Floating (Recommend Connection to V-) Metallization Mask Layout HFA1106 -IN COMP 3-41 3-42 3-43