HS-1100RH Data Sheet Radiation Hardened, Ultra High Speed Current Feedback Amplifier The HS-1100RH is a radiation hardened high speed, wideband, fast settling current feedback amplifier. Built with Intersil’s proprietary, complementary bipolar UHF-1 (DI bonded wafer) process, it is the fastest monolithic amplifier available from any semiconductor manufacturer. These devices are QML approved and are processed and screened in full compliance with MIL-PRF-38535. The HS-1100RH’s wide bandwidth, fast settling characteristic, and low output impedance make this amplifier ideal for driving fast A/D converters. Component and composite video systems will also benefit from this amplifier’s performance, as indicated by the excellent gain flatness, and 0.03%/0.05 Deg. Differential Gain/Phase specifications (RL = 75Ω). Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed here must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-94676. A “hot-link” is provided on our homepage for downloading. http://www.intersil.com/spacedefense/space.htm Ordering Information ORDERING NUMBER INTERNAL MKT. NUMBER File Number 4100.2 Features • Electrically Screened to SMD # 5962-94676 • QML Qualified per MIL-PRF-38535 Requirements • Low Distortion (HD3, 30MHz). . . . . . . . . . . . -84dBc (Typ) • Wide -3dB Bandwidth. . . . . . . . . . . . . . . . . 850MHz (Typ) • Very High Slew Rate . . . . . . . . . . . . . . . . 2300V/µs (Typ) • Fast Settling (0.1%) . . . . . . . . . . . . . . . . . . . . . 11ns (Typ) • Excellent Gain Flatness (to 50MHz). . . . . . . 0.05dB (Typ) • High Output Current . . . . . . . . . . . . . . . . . . . 65mA (Typ) • Fast Overdrive Recovery . . . . . . . . . . . . . . . . <10ns (Typ) • Total Gamma Dose. . . . . . . . . . . . . . . . . . . . 300kRAD(Si) • Latch Up . . . . . . . . . . . . . . . . . . . . . None (DI Technology) Applications • Video Switching and Routing • Pulse and Video Amplifiers • Wideband Amplifiers • RF/IF Signal Processing • Flash A/D Driver • Imaging Systems TEMP. RANGE (oC) 5962F9467602VPA HS7-1100RH-Q -55 to 125 5962F9467602VPC HS7B-1100RH-Q -55 to 125 HFA1100IJ (Sample) HFA1100IJ -40 to 85 HFA11XXEVAL Evaluation Board 1 August 1999 Pinout HS-1100RH GDIP1-T8 (CERDIP) OR CDIP2-T8 (SBDIP) TOP VIEW NC 1 -IN 2 +IN 3 V- 4 + 8 NC 7 V+ 6 OUT 5 NC CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 HS-1100RH Typical Applications traces connected to -IN, and connections to -IN should be kept as short as possible. Optimum Feedback Resistor The enclosed plots of inverting and non-inverting frequency response illustrate the performance of the HS-1100RH in various gains. Although the bandwidth dependency on closed loop gain isn’t as severe as that of a voltage feedback amplifier, there can be an appreciable decrease in bandwidth at higher gains. This decrease may be minimized by taking advantage of the current feedback amplifier’s unique relationship between bandwidth and RF. All current feedback amplifiers require a feedback resistor, even for unity gain applications, and RF , in conjunction with the internal compensation capacitor, sets the dominant pole of the frequency response. Thus, the amplifier’s bandwidth is inversely proportional to RF . The HS-1100RH design is optimized for a 510Ω RF at a gain of +1. Decreasing RF in a unity gain application decreases stability, resulting in excessive peaking and overshoot. At higher gains the amplifier is more stable, so RF can be decreased in a trade-off of stability for bandwidth. An example of a good high frequency layout is the Evaluation Board shown in Figure 2. Driving Capacitive Loads Capacitive loads, such as an A/D input, or an improperly terminated transmission line will degrade the amplifier’s phase margin resulting in frequency response peaking and possible oscillations. In most cases, the oscillation can be avoided by placing a resistor (RS) in series with the output prior to the capacitance. Figure 1 details starting points for the selection of this resistor. The points on the curve indicate the RS and CL combinations for the optimum bandwidth, stability, and settling time, but experimental fine tuning is recommended. Picking a point above or to the right of the curve yields an overdamped response, while points below or left of the curve indicate areas of underdamped performance. The table below lists recommended RF values for various gains, and the expected bandwidth. 50 45 RF (Ω) BANDWIDTH (MHz) -1 430 580 +1 510 850 +2 360 670 +5 150 520 +10 180 240 +19 270 125 40 AV = +1 35 RS (Ω) GAIN (ACL) 30 25 20 15 10 5 A = +2 V 0 0 40 80 120 160 200 240 280 320 360 400 LOAD CAPACITANCE (pF) PC Board Layout The frequency response of this amplifier depends greatly on the amount of care taken in designing the PC board. The use of low inductance components such as chip resistors and chip capacitors is strongly recommended, while a solid ground plane is a must! Attention should be given to decoupling the power supplies. A large value (10µF) tantalum in parallel with a small value (0.1µF) chip capacitor works well in most cases. Terminated microstrip signal lines are recommended at the input and output of the device. Capacitance directly on the output must be minimized, or isolated as discussed in the next section. Care must also be taken to minimize the capacitance to ground seen by the amplifier’s inverting input (-IN). The larger this capacitance, the worse the gain peaking, resulting in pulse overshoot and possible instability. To this end, it is recommended that the ground plane be removed under 2 FIGURE 1. RECOMMENDED SERIES OUTPUT RESISTOR vs LOAD CAPACITANCE RS and CL form a low pass network at the output, thus limiting system bandwidth well below the amplifier bandwidth of 850MHz. By decreasing RS as CL increases (as illustrated in the curves), the maximum bandwidth is obtained without sacrificing stability. Even so, bandwidth does decrease as you move to the right along the curve. For example, at AV = +1, RS = 50Ω, CL = 30pF, the overall bandwidth is limited to 300MHz, and bandwidth drops to 100MHz at AV = +1, RS = 5Ω, CL = 340pF. Evaluation Board The performance of the HS-1100RH may be evaluated using the HFA11XXEVAL Evaluation Board. The layout and schematic of the board are shown in Figure 2. To order evaluation boards, please contact your local sales office. HS-1100RH VH 1 +IN OUT V+ VL VGND FIGURE 2A. TOP LAYOUT FIGURE 2B. BOTTOM LAYOUT 500 500 VH R1 50Ω 8 2 7 3 6 4 5 10µF 0.1µF +5V 50Ω IN 10µF 1 OUT GND 0.1µF -5V VL GND FIGURE 2C. SCHEMATIC FIGURE 2. EVALUATION BOARD SCHEMATIC AND LAYOUT Typical Performance Characteristics Device Characterized at: VSUPPLY = ±5V, RF = 360Ω, AV = +2V/V, RL = 100Ω, Unless Otherwise Specified PARAMETERS CONDITIONS TEMPERATURE TYPICAL UNITS 25oC 2 mV Full 10 µV/oC Input Offset Voltage (Note 1) VCM = 0V Average Offset Voltage Drift Versus Temperature VIO CMRR ∆VCM = ±2V 25oC 46 dB ∆VS = ±1.25V 25oC 50 dB +Input Current (Note 1) VCM = 0V 25oC 25 µA Average +Input Current Drift Versus Temperature Full 40 nA/oC - Input Current (Note 1) VCM = 0V 25oC 12 µA Average -Input Current Drift Versus Temperature Full 40 nA/oC +Input Resistance ∆VCM = ±2V 25oC 50 kΩ - Input Resistance 25oC 16 Ω Input Capacitance 25oC 2.2 pF Input Noise Voltage (Note 1) f = 100kHz 25oC 4 nV/√Hz f = 100kHz 25oC 18 pA/√Hz f = 100kHz 25oC 21 pA/√Hz Input Common Mode Range Full ±3.0 V Open Loop Transimpedance 25oC 500 kΩ VIO PSRR +Input Noise Current (Note 1) -Input Noise Current (Note 1) AV = -1 3 HS-1100RH Typical Performance Characteristics (Continued) Device Characterized at: VSUPPLY = ±5V, RF = 360Ω, AV = +2V/V, RL = 100Ω, Unless Otherwise Specified PARAMETERS CONDITIONS Output Voltage TEMPERATURE TYPICAL UNITS 25oC ±3.3 V AV = -1, RL = 100Ω Full ±3.0 V AV = -1, RL = 50Ω 25oC to 125oC ±65 mA AV = -1, RL = 50Ω -55oC to 0oC ±50 mA 25oC 0.1 W Full 24 mA AV = -1, RF = 430Ω, VOUT = 200mVP-P 25oC 580 MHz AV = +1, RF = 510Ω, VOUT = 200mVP-P 25oC 850 MHz AV = +2, RF = 360Ω, VOUT = 200mVP-P 25oC 670 MHz AV = +1, RF = 510Ω, VOUT = 5VP-P 25oC 1500 V/µs AV = +2, VOUT = 5VP-P 25oC 2300 V/µs VOUT = 5VP-P 25oC 220 MHz To 30MHz, RF = 510Ω 25oC ±0.014 dB To 50MHz, RF = 510Ω 25oC ±0.05 dB To 100MHz, RF = 510Ω 25oC ±0.14 dB To 100MHz, RF = 510Ω 25oC ±0.6 Degrees 30MHz, VOUT = 2VP-P 25oC -55 dBc 50MHz, VOUT = 2VP-P 25oC -49 dBc 100MHz, VOUT = 2VP-P 25oC -44 dBc 30MHz, VOUT = 2VP-P 25oC -84 dBc 50MHz, VOUT = 2VP-P 25oC -70 dBc 100MHz, VOUT = 2VP-P 25oC -57 dBc 100MHz, RF = 510Ω 25oC 30 dBm 100MHz, RF = 510Ω 25oC 20 dBm 40MHz, RF = 510Ω 25oC -70 dB 100MHz, RF = 510Ω 25oC -60 dB 600MHz, RF = 510Ω 25oC -32 dB VOUT = 0.5VP-P 25oC 500 ps VOUT = 2VP-P 25oC 800 ps VOUT = 0.5VP-P, Input tR/tF = 550ps 25oC 11 % To 0.1%, VOUT = 2V to 0V, RF = 510Ω 25oC 11 ns To 0.05%, VOUT = 2V to 0V, RF = 510Ω 25oC 19 ns To 0.02%, VOUT = 2V to 0V, RF = 510Ω 25oC 34 ns AV = +2, RL = 75Ω, NTSC 25oC 0.03 % AV = +2, RL = 75Ω, NTSC 25oC 0.05 Degrees RF = 510Ω, VIN = 5VP-P 25oC 7.5 ns AV = -1, RL = 100Ω Output Current (Note 1) DC Closed Loop Output Resistance Quiescent Supply Current (Note 1) -3dB Bandwidth (Note 1) Slew Rate Full Power Bandwidth Gain Flatness (Note 1) Linear Phase Deviation (Note 1) 2nd Harmonic Distortion (Note 1) 3rd Harmonic Distortion (Note 1) 3rd Order Intercept (Note 1) 1dB Compression Reverse Isolation (S12) Rise and Fall Time Overshoot (Note 1) Settling Time (Note 1) Differential Gain Differential Phase Overdrive Recovery Time RL = Open NOTE: 1. See Typical Performance Curves for more information. 4 HS-1100RH VSUPPLY = ±5V, RF = 510Ω, RL = 100Ω, TA = 25oC, Unless Otherwise Specified 120 1.2 90 0.9 OUTPUT VOLTAGE (V) 60 30 0 -30 -60 0.6 0.3 0 -0.3 -0.6 -90 -0.9 -120 -1.2 5ns/DIV. 5ns/DIV. GAIN 0 -3 AV = +1 -6 AV = +2 -9 AV = +6 AV = +11 -12 PHASE 0.3 1 0 AV = +1 -90 AV = +2 -180 AV = +6 AV = +11 -270 10 100 FREQUENCY (MHz) -360 1K PHASE RL = 1kΩ 0 -90 -180 RL = 100Ω RL = 1kΩ 0.3 1 10 100 FREQUENCY (MHz) -270 -360 1K FIGURE 7. FREQUENCY RESPONSE FOR VARIOUS LOAD RESISTORS (AV = +1, VOUT = 200mVP-P) 5 AV = -10 -9 AV = -20 -12 PHASE 180 AV = -1 90 AV = -5 0 AV = -20 GAIN (dB) NORMALIZED -6 PHASE (DEGREES) GAIN (dB) GAIN RL = 100Ω RL = 50Ω RL = 50Ω RL = 100Ω -6 1 10 100 FREQUENCY (MHz) -90 -180 1K FIGURE 6. INVERTING FREQUENCY RESPONSE (VOUT = 200mVP-P) RL = 1kΩ -3 AV = -1 AV = -5 0.3 +6 0 -3 AV = -10 FIGURE 5. NON-INVERTING FREQUENCY RESPONSE (VOUT = 200mVP-P) +3 GAIN 0 PHASE (DEGREES) GAIN (dB) NORMALIZED FIGURE 4. LARGE SIGNAL PULSE RESPONSE (AV = +2) PHASE (DEGREES) GAIN (dB) NORMALIZED FIGURE 3. SMALL SIGNAL PULSE RESPONSE (AV = +2) RL = 1kΩ +3 0 GAIN -3 RL = 100Ω RL = 50Ω -6 PHASE 0 RL = 50Ω RL = 100Ω -90 RL = 1kΩ -180 -270 RL = 100Ω RL = 1kΩ 0.3 1 10 100 FREQUENCY (MHz) -360 PHASE (DEGREES) OUTPUT VOLTAGE (mV) Typical Performance Curves 1K FIGURE 8. FREQUENCY RESPONSE FOR VARIOUS LOAD RESISTORS (AV = +2, VOUT = 200mVP-P) HS-1100RH VSUPPLY = ±5V, RF = 510Ω, RL = 100Ω, TA = 25oC, Unless Otherwise Specified GAIN (dB) NORMALIZED Typical Performance Curves +20 GAIN (dB) +10 0 0.160VP-P 0.500VP-P 0.920VP-P 1.63VP-P -10 -20 -30 0.3 1 10 FREQUENCY (MHz) 100 +10 0 0.32VP-P -10 1.00VP-P -20 1.84VP-P -30 3.26VP-P 1 10 FREQUENCY (MHz) 100 1K FIGURE 10. FREQUENCY RESPONSE FOR VARIOUS OUTPUT VOLTAGES (AV = +2) +20 950 +10 0 BANDWIDTH (MHz) GAIN (dB) NORMALIZED FIGURE 9. FREQUENCY RESPONSE FOR VARIOUS OUTPUT VOLTAGES (AV = +1) +20 0.3 1K (Continued) -10 0.96VP-P TO 3.89VP-P -20 -30 900 850 800 750 700 0.3 1 10 100 FREQUENCY (MHz) -50 1K -25 0 25 50 75 100 125 TEMPERATURE (oC) FIGURE 11. FREQUENCY RESPONSE FOR VARIOUS OUTPUT VOLTAGES (AV = +6) FIGURE 12. -3dB BANDWIDTH vs TEMPERATURE (AV = +1) +2.0 DEVIATION (DEGREES) +1.5 GAIN (dB) 0 -0.05 -0.10 -0.15 -0.20 +1.0 +0.5 0 -0.5 -1.0 -1.5 -2.0 1 10 FREQUENCY (MHz) FIGURE 13. GAIN FLATNESS (AV = +2) 6 100 0 15 30 45 60 75 90 105 120 135 150 FREQUENCY (MHz) FIGURE 14. DEVIATION FROM LINEAR PHASE (AV = +2) HS-1100RH Typical Performance Curves VSUPPLY = ±5V, RF = 510Ω, RL = 100Ω, TA = 25oC, Unless Otherwise Specified (Continued) 40 35 INTERCEPT POINT (dBm) SETTLING ERROR (%) 0.6 0.4 0.2 0 -0.2 -0.4 -0.6 30 25 20 15 10 5 0 -4 1 6 11 16 21 26 TIME (ns) 31 36 41 0 46 FIGURE 15. SETTLING RESPONSE (AV = +2, VOUT = 2V) -30 -35 -40 400 -50 100MHz DISTORTION (dBc) DISTORTION (dBc) -40 -45 50MHz -50 -55 -60 100MHz -60 -70 50MHz -80 -90 30MHz 30MHz -100 -65 -110 -70 -5 -3 -1 1 3 5 7 9 OUTPUT POWER (dBm) 11 13 -5 15 -3 -1 1 3 5 7 9 11 13 15 OUTPUT POWER (dBm) FIGURE 17. 2ND HARMONIC DISTORTION vs POUT FIGURE 18. 3RD HARMONIC DISTORTION vs POUT 35 RF = 360Ω VOUT = 2VP-P 30 VOUT = 1VP-P OVERSHOOT (%) OVERSHOOT (%) 200 300 FREQUENCY (MHz) FIGURE 16. 3RD ORDER INTERMODULATION INTERCEPT (2-TONE) -30 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 100 VOUT = 0.5VP-P VOUT = 2VP-P 25 20 RF = 360Ω VOUT = 1VP-P RF = 360Ω VOUT = 0.5VP-P 15 RF = 510Ω VOUT = 2VP-P 10 5 RF = 510Ω VOUT = 1VP-P RF = 510Ω VOUT = 0.5VP-P 0 100 200 300 400 500 600 700 800 900 1000 INPUT RISE TIME (ps) FIGURE 19. OVERSHOOT vs INPUT RISE TIME (AV = +1) 7 100 200 300 400 500 600 700 800 900 1000 INPUT RISE TIME (ps) FIGURE 20. OVERSHOOT vs INPUT RISE TIME (AV = +2) HS-1100RH VSUPPLY = ±5V, RF = 510Ω, RL = 100Ω, TA = 25oC, Unless Otherwise Specified 24 23 22 21 20 19 18 400 440 480 520 560 600 FEEDBACK RESISTOR (Ω) 640 -60 680 7 8 0 20 40 60 80 100 120 FIGURE 22. SUPPLY CURRENT vs TEMPERATURE INPUT OFFSET VOLTAGE (mV) 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 6 -20 TEMPERATURE (oC) FIGURE 21. OVERSHOOT vs FEEDBACK RESISTOR (AV = +2, tR = 200ps, VOUT = 2VP-P) 5 -40 9 10 2.8 2.7 2.6 2.5 2.4 2.3 2.2 2.1 2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 +IBIAS VIO -IBIAS -60 -40 -20 TOTAL SUPPLY VOLTAGE (V+ - V-, V) FIGURE 23. SUPPLY CURRENT vs SUPPLY VOLTAGE 45 42 39 36 33 30 27 24 21 18 15 12 9 6 3 0 0 20 40 60 80 TEMPERATURE (oC) BIAS CURRENTS (µA) 360 SUPPLY CURRENT (mA) (Continued) 25 36 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 SUPPLY CURRENT (mA) OVERSHOOT (%) Typical Performance Curves 100 120 FIGURE 24. VIO AND BIAS CURRENTS vs TEMPERATURE 3.7 30 300 3.4 3.3 3.2 | - VOUT | 3.1 3 2.9 2.8 2.7 25 250 225 20 200 175 150 15 125 10 100 75 5 ENI eni INIiniINI+ ini+ 2.6 2.5 -60 -40 -20 0 20 40 60 80 100 120 TEMPERATURE (oC) FIGURE 25. OUTPUT VOLTAGE vs TEMPERATURE (AV = -1, RL = 50Ω) 8 0 100 1K 10K 100K FREQUENCY (Hz) FIGURE 26. INPUT NOISE vs FREQUENCY 50 25 0 NOISE CURRENT (pA/√HZ) 275 +VOUT 3.5 NOISE VOLTAGE (nV/√HZ) OUTPUT VOLTAGE (V) 3.6 HS-1100RH Test Circuit V+ + 10 ICC 0.1 510 VIN NC + VX 0.1 K2 K2 = POSITION 2: VX 50K 3 1 1K 6 VOUT DUT + 100 510 100 4 K3 200pF 100K (0.01%) VZ 100K +IBIAS = - 510 2 X100 -IBIAS = 7 100 2 470pF - 510 0.1 0.1 K2 = POSITION 1: 0.1 V VIO = X 100 - VZ + 10 0.1 IEE 0.1 + HA-5177 NOTES: 2. Unless otherwise noted, component value multiplier and tolerances shall be as follows: Resistors, Ω ±1%. Capacitors, µF ±10% V- 3. Chip Components Recommended. Test Waveforms SIMPLIFIED TEST CIRCUIT FOR LARGE AND SMALL SIGNAL PULSE RESPONSE V+ (+5V) V+ (+5V) VIN VOUT + RS 50Ω - 50Ω RF 2 50Ω VIN - 510Ω V- (-5V) V- (-5V) AV = +1 TEST CIRCUIT VOUT +2.5V 90% 90% +SR -2.5V 10% LARGE SIGNAL WAVEFORM 9 RF 50Ω 360Ω 2 50Ω RG 360Ω AV = +2 TEST CIRCUIT +2.5V -SR 10% VOUT + RS 50Ω -2.5V VOUT +250mV 90% 90% TR , +OS -250mV +250mV TF , -OS 10% 10% SMALL SIGNAL WAVEFORM -250mV HS-1100RH Burn-In Circuit Irradiation Circuit HS-1100RH CERDIP HS-1100RH CERDIP R3 R2 R1 8 2 7 + 6 4 VD2 1 3 D4 R3 D3 R2 V+ C1 5 D1 R1 8 2 7 3 4 V- C2 1 C2 NOTES: NOTES: 5. R3 = 10kΩ, ±5% (Per Socket). 11. R1 = R2 = 1kΩ, ±5%. 12. R3 = 10kΩ, ±5%. 6. C1 = C2 = 0.01µF (Per Socket) or 0.1µF (Per Row) Min. 7. D1 = D2 = 1N4002 or Equivalent (Per Board). 14. V+ = +5.5V ± 0.5V. 4. R1 = R2 = 1kΩ, ±5% (Per Socket). 8. D3 = D4 = 1N4002 or Equivalent (Per Socket). 9. V+ = +5.5V ±0.5V. 10. V- = -5.5V ±0.5V. 10 13. C1 = C2 = 0.1µF. 15. V- = -5.5V ± 0.5V. - + 6 5 D3 V+ C1 HS-1100RH Die Characteristics DIE DIMENSIONS: Substrate: 63 mils x 44 mils x 19 mils ±1 mil (1600µm x 1130µm x 483µm ±25.4µm) UHF-1, Bonded Wafer, DI ASSEMBLY RELATED INFORMATION: INTERFACE MATERIALS: Substrate Potential (Powered Up): Glassivation: Floating Type: Nitride Thickness: 4kÅ ±0.5kÅ ADDITIONAL INFORMATION: Worst Case Current Density: Top Metallization: 1.6 x 105 A/cm2 Type: Metal 1: AICu(2%)/TiW Thickness: Metal 1: 8kÅ ±0.4kÅ Type: Metal 2: AICu (2%) Thickness: Metal 2: 16kÅ ±0.8kÅ Transistor Count: 52 Metallization Mask Layout HS-1100RH +IN -IN V- BAL VL VH BAL V+ OUT All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com 11