SEMiX151GD066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 200 A Tc = 80 °C 151 A 150 A ICnom ICRM SEMiX® 13 Trench IGBT Modules ICRM = 2xICnom 300 A -20 ... 20 V 6 µs -40 ... 175 °C Tc = 25 °C 219 A Tc = 80 °C 161 A 150 A VGES tpsc VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V Tj = 150 °C Tj Inverse diode IF SEMiX151GD066HDs Tj = 175 °C IFnom Features IFRM IFRM = 2xIFnom 300 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 980 A -40 ... 175 °C • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Module Typical Applications* Visol • Matrix Converter • Resonant Inverter • Current Source Inverter Characteristics Tj It(RMS) Tstg Symbol AC sinus 50Hz, t = 1 min Conditions min. 600 A -40 ... 125 °C 4000 V typ. max. Unit Tj = 25 °C 1.45 1.85 V Tj = 150 °C 1.7 2.1 V VCE0 Tj = 25 °C 0.9 1 V Tj = 150 °C 0.85 0.9 V rCE Tj = 25 °C 3.7 5.7 mΩ IGBT Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • For short circuit: Soft RGoff recommended • Take care of over-voltage caused by stray inductance VCE(sat) IC = 150 A VGE = 15 V chiplevel VGE = 15 V Tj = 150 °C VGE(th) VGE=VCE, IC = 2.4 mA ICES VGE = 0 V VCE = 600 V Cies Coes Cres VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 15 V RGint Tj = 25 °C VCC = 300 V IC = 150 A td(on) tr Eon RG on = 4.5 Ω RG off = 4.5 Ω Tj = 25 °C 5 5.7 8.0 mΩ 5.8 6.5 V 0.15 0.45 mA Tj = 150 °C mA f = 1 MHz 9.2 nF f = 1 MHz 0.58 nF f = 1 MHz Tj = 150 °C 0.27 nF 1200 nC 2.00 Ω 140 ns Tj = 150 °C 40 ns Tj = 150 °C 3.8 mJ Tj = 150 °C 385 ns tf Tj = 150 °C 40 ns Eoff Tj = 150 °C 6.1 mJ td(off) Rth(j-c) per IGBT 0.29 K/W GD © by SEMIKRON Rev. 0 – 16.04.2010 1 SEMiX151GD066HDs Characteristics Symbol Conditions Inverse diode VF = VEC IF = 150 A VGE = 0 V chip VF0 rF SEMiX® 13 IRRM Qrr Trench IGBT Modules Err Rth(j-c) SEMiX151GD066HDs • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Typical Applications* • Matrix Converter • Resonant Inverter • Current Source Inverter Tj = 25 °C Tj = 150 °C typ. max. Unit 1.4 1.60 V 1.4 1.6 V Tj = 25 °C 0.9 1 1.1 V Tj = 150 °C 0.75 0.85 0.95 V Tj = 25 °C 2.0 2.7 3.3 mΩ 3.7 4.3 mΩ Tj = 150 °C IF = 150 A Tj = 150 °C di/dtoff = 3000 A/µs T = 150 °C j VGE = -8 V T j = 150 °C VCC = 300 V per diode 3.0 155 A 24 µC 5.8 mJ 0.36 K/W Module LCE RCC'+EE' Features min. res., terminal-chip Rth(c-s) per module Ms to heat sink (M5) 20 nH TC = 25 °C 0.7 mΩ TC = 125 °C 1 mΩ 0.04 to terminals (M6) Mt K/W 3 5 Nm 2.5 5 Nm Nm w 350 g Temperatur Sensor R100 Tc=100°C (R25=5 kΩ) B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% Ω 3550 ±2% K Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • For short circuit: Soft RGoff recommended • Take care of over-voltage caused by stray inductance GD 2 Rev. 0 – 16.04.2010 © by SEMIKRON SEMiX151GD066HDs Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 0 – 16.04.2010 3 SEMiX151GD066HDs Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 0 – 16.04.2010 © by SEMIKRON SEMiX151GD066HDs SEMiX 13 spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © by SEMIKRON Rev. 0 – 16.04.2010 5