SEMiX402GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 509 A Tc = 80 °C 383 A 400 A ICnom ICRM SEMiX®2s tpsc Trench IGBT Modules ICRM = 2xICnom 800 A -20 ... 20 V 6 µs -40 ... 175 °C Tc = 25 °C 543 A Tc = 80 °C 397 A 400 A VGES VCC = 360 V VGE ≤ 15 V Tj = 150 °C VCES ≤ 600 V Tj Inverse diode SEMiX402GB066HDs IF Preliminary Data Tj = 175 °C IFnom Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Typical Applications • Matrix Converter • Resonant Inverter • Current Source Inverter IFRM IFRM = 2xIFnom 800 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 1800 A -40 ... 175 °C Tj Module It(RMS) Tstg Visol • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • For short circuit: Soft RGoff recommended • Take care of over-voltage caused by stray inductance A °C 4000 V Characteristics Symbol Remarks AC sinus 50Hz, t = 1 min 600 -40 ... 125 Conditions min. typ. max. Unit Tj = 25 °C 1.45 1.9 V Tj = 150 °C 1.70 2.1 V IGBT VCE(sat) IC = 400 A VGE = 15 V chiplevel VCE0 rCE VGE = 15 V Tj = 25 °C 0.9 1 V Tj = 150 °C 0.85 0.9 V Tj = 25 °C 1.4 2.3 mΩ mΩ Tj = 150 °C VGE(th) VGE=VCE, IC = 6.4 mA ICES VGE = 0 V VCE = 600 V Cies Coes Cres VCE = 25 V VGE = 0 V Tj = 25 °C 5 2.1 3.0 5.8 6.5 V 0.15 0.45 mA Tj = 150 °C mA f = 1 MHz 24.7 nF f = 1 MHz 1.54 nF f = 1 MHz 0.73 nF QG VGE = - 8 V...+ 15 V 3200 nC RGint Tj = 25 °C 1.00 Ω td(on) VCC = 300 V IC = 400 A Tj = 150 °C RG on = 4.5 Ω RG off = 4.5 Ω 150 ns tr Eon td(off) tf Eoff Rth(j-c) per IGBT Rth(j-s) per IGBT 125 ns 22 mJ 900 ns 65 ns 24 mJ 0.12 K/W K/W GB © by SEMIKRON Rev. 18 – 02.12.2008 1 SEMiX402GB066HDs Characteristics Symbol Conditions Inverse diode VF = VEC IF = 400 A VGE = 0 V chiplevel VF0 SEMiX®2s rF min. typ. max. Unit Tj = 25 °C 1.4 1.6 V Tj = 150 °C 1.4 1.6 V Tj = 25 °C 0.9 1 1.1 V Tj = 150 °C 0.75 0.85 0.95 V Tj = 25 °C 0.8 1.0 1.3 mΩ Tj = 150 °C 1.1 1.4 1.6 mΩ Rth(j-c) IF = 400 A Tj = 150 °C di/dtoff = 3700 A/µs T = 150 °C j VGE = -8 V T j = 150 °C VCC = 300 V per diode SEMiX402GB066HDs Rth(j-s) per diode Preliminary Data Module IRRM Trench IGBT Modules Qrr Err • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 RCC'+EE' res., terminal-chip Rth(c-s) per module Ms to heat sink (M5) µC 10 mJ TC = 25 °C TC = 125 °C 18 nH 0.7 mΩ 1 mΩ 0.045 K/W 3 5 Nm 2.5 5 Nm Nm Typical Applications w • Matrix Converter • Resonant Inverter • Current Source Inverter Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • For short circuit: Soft RGoff recommended • Take care of over-voltage caused by stray inductance K/W K/W to terminals (M6) Mt A 47 0.15 LCE Features 250 250 g Temperature sensor R100 Tc=100°C (R25=5 kΩ) 0,493 ±5% kΩ B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 3550 ±2% K GB 2 Rev. 18 – 02.12.2008 © by SEMIKRON SEMiX402GB066HDs Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic © by SEMIKRON Rev. 18 – 02.12.2008 3 SEMiX402GB066HDs Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 Rev. 18 – 02.12.2008 © by SEMIKRON SEMiX402GB066HDs SEMiX 2s GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 18 – 02.12.2008 5