datasheet

SEMiX201GD066HDs
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 175 °C
600
V
Tc = 25 °C
259
A
Tc = 80 °C
196
A
200
A
ICnom
ICRM
SEMiX® 13
Trench IGBT Modules
ICRM = 2xICnom
400
A
-20 ... 20
V
6
µs
-40 ... 175
°C
Tc = 25 °C
284
A
Tc = 80 °C
208
A
200
A
VGES
tpsc
VCC = 360 V
VGE ≤ 15 V
VCES ≤ 600 V
Tj = 150 °C
Tj
Inverse diode
IF
SEMiX201GD066HDs
Tj = 175 °C
IFnom
Features
IFRM
IFRM = 2xIFnom
400
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
1300
A
-40 ... 175
°C
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Module
Typical Applications*
Visol
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Characteristics
Tj
It(RMS)
Tstg
Symbol
AC sinus 50Hz, t = 1 min
Conditions
min.
600
A
-40 ... 125
°C
4000
V
typ.
max.
Unit
Tj = 25 °C
1.45
1.85
V
Tj = 150 °C
1.7
2.1
V
VCE0
Tj = 25 °C
0.9
1
V
Tj = 150 °C
0.85
0.9
V
rCE
Tj = 25 °C
2.8
4.3
mΩ
IGBT
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• For short circuit: Soft RGoff
recommended
• Take care of over-voltage caused by
stray inductance
VCE(sat)
IC = 200 A
VGE = 15 V
chiplevel
VGE = 15 V
Tj = 150 °C
VGE(th)
VGE=VCE, IC = 3.2 mA
ICES
VGE = 0 V
VCE = 600 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
QG
VGE = - 8 V...+ 15 V
RGint
Tj = 25 °C
VCC = 300 V
IC = 200 A
td(on)
tr
Eon
RG on = 3 Ω
RG off = 3 Ω
Tj = 25 °C
5
4.3
6.0
mΩ
5.8
6.5
V
0.15
0.45
mA
Tj = 150 °C
mA
f = 1 MHz
12.3
nF
f = 1 MHz
0.77
nF
f = 1 MHz
0.37
nF
1600
nC
2.00
Ω
Tj = 150 °C
180
ns
Tj = 150 °C
55
ns
Tj = 150 °C
5
mJ
Tj = 150 °C
500
ns
tf
Tj = 150 °C
55
ns
Eoff
Tj = 150 °C
8
mJ
td(off)
Rth(j-c)
per IGBT
0.23
K/W
GD
© by SEMIKRON
Rev. 0 – 16.04.2010
1
SEMiX201GD066HDs
Characteristics
Symbol
Conditions
Inverse diode
VF = VEC IF = 200 A
VGE = 0 V
chip
VF0
rF
SEMiX® 13
IRRM
Qrr
Trench IGBT Modules
Err
Rth(j-c)
SEMiX201GD066HDs
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• UL recognised file no. E63532
Typical Applications*
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Tj = 25 °C
Tj = 150 °C
typ.
max.
Unit
1.4
1.60
V
1.4
1.6
V
Tj = 25 °C
0.9
1
1.1
V
Tj = 150 °C
0.75
0.85
0.95
V
Tj = 25 °C
1.5
2.0
2.5
mΩ
2.8
3.3
mΩ
Tj = 150 °C
IF = 200 A
Tj = 150 °C
di/dtoff = 3900 A/µs T = 150 °C
j
VGE = -8 V
T
j = 150 °C
VCC = 300 V
per diode
2.3
200
A
32
µC
7.5
mJ
0.28
K/W
Module
LCE
RCC'+EE'
Features
min.
res., terminal-chip
Rth(c-s)
per module
Ms
to heat sink (M5)
20
nH
TC = 25 °C
0.7
mΩ
TC = 125 °C
1
mΩ
0.04
to terminals (M6)
Mt
K/W
3
5
Nm
2.5
5
Nm
Nm
w
350
g
Temperatur Sensor
R100
Tc=100°C (R25=5 kΩ)
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
493 ± 5%
Ω
3550
±2%
K
Remarks
• Case temperature limited to TC=125°C
max.
• Product reliability results are valid for
Tj=150°C
• For short circuit: Soft RGoff
recommended
• Take care of over-voltage caused by
stray inductance
GD
2
Rev. 0 – 16.04.2010
© by SEMIKRON
SEMiX201GD066HDs
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 0 – 16.04.2010
3
SEMiX201GD066HDs
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 0 – 16.04.2010
© by SEMIKRON
SEMiX201GD066HDs
SEMiX 13
spring configuration
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
© by SEMIKRON
Rev. 0 – 16.04.2010
5