SiP32413, SiP32414, SiP32416 Vishay Siliconix Dual 2 A, 1.2 V, Slew Rate Controlled Load Switch DESCRIPTION FEATURES SiP32413, SiP32414 and SiP32416 are slew rate controlled load switches that is designed for 1.1 V to 5.5 V operation. The devices guarantee low switch on-resistance at 1.2 V input. SiP32413 and SiP32414 feature a controlled soft-on slew rate of typical 150 µs that limits the inrush current for designs of capacitive load or noise sensitive loads. SiP32416 features a longer slew rate of typical 2.5 ms to keep the peak of the inrush current even lower. The devices feature a low voltage control logic interface (On/Off interface) that can interface with low voltage digital control without extra level shifting circuit. The SiP32414 and SiP32416 also integrate output discharge switches that enable fast shutdown load discharge. When the switches are off, they provide the reverse blocking to prevent high current flowing into the power source. All SiP32413, SiP32414 and SiP32416 are available in TDFN8 2 mm x 2 mm package. Each switch in each device can support over 2 A of continuous current. • Halogen-free according to IEC 61249-2-21 definition • 1.1 V to 5.5 V operation voltage range • 62 m typical from 2 V to 5 V • Low RON down to 1.2 V • Slew rate controlled turn-on: 150 µs at 3.6 V for SiP32413, SiP32414 2.5 ms at 3.6 V for SiP32416 • Fast shutdown load discharge for SiP32414 and SiP32416 • Low quiescent current < 1 µA when disabled 6.7 µA at VIN = 1.2 V • Switch off reversed blocking • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • • • • • • Cellular phones Portable media players Digital camera GPS Computers Portable instruments and healthcare devices TYPICAL APPLICATION CIRCUIT VIN IN OUT VOUT SiP32413, SiP32414, SiP32416 (for one switch) C IN 4.7 µF C OUT 0.1 µF CNTRL CNTRL GND GND GND Figure 1 - SiP32413, SiP32414, SiP32416 Typical Application Circuit Document Number: 71437 S11-2472-Rev. B, 19-Dec-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32413, SiP32414, SiP32416 Vishay Siliconix ORDERING INFORMATION Temperature Range - 40 °C to 85 °C Package TDFN8 2 mm x 2 mm Marking Part Number AA SiP32413DNP-T1-GE4 AB SiP32414DNP-T1-GE4 AG SiP32416DNP-T1-GE4 Note: GE4 denotes halogen-free and RoHS compliant ABSOLUTE MAXIMUM RATINGS Parameter Limit Supply Input Voltage (VIN) - 0.3 to 6 Enable Input Voltage (VEN) - 0.3 to 6 Output Voltage (VOUT) - 0.3 to 6 Maximum Continuous Switch Current (Imax.) Unit V 2.4 Maximum Pulsed Current (Pulsed at 1 ms, 10 % Duty Cycle) A 3 ESD Rating (HBM) 4000 V Storage Temperature (Tstg) - 65 to 150 °C Thermal Resistance (JA)a 95 °C/W Power Dissipation (PD)a, b 580 mW Notes: a. Device mounted with all leads and power pad soldered or welded to PC board, see PCB layout. b. Derate 10.5 mW/°C above TA = 70 °C, see PCB layout. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE Parameter Input Voltage Range (VIN) Operating Junction Temperature Range (TJ) www.vishay.com 2 Limit Unit 1.1 to 5.5 V - 40 to 125 °C Document Number: 71437 S11-2472-Rev. B, 19-Dec-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32413, SiP32414, SiP32416 Vishay Siliconix SPECIFICATIONS Parameter Operating Voltagec Symbol VIN Quiescent Current IQ Test Conditions Unless Specified VIN = 5 V, TA = - 40 °C to 85 °C (Typical values are at TA = 25 °C) Limits - 40 °C to 85 °C Min.a 1.1 Typ.b - Max.a 5.5 VIN = 1.2 V, CNTRL = active - 6.7 14 VIN = 1.8 V, CNTRL = active - 14 24 VIN = 2.5 V, CNTRL = active - 25 40 VIN = 3.6 V, CNTRL = active - 40 60 VIN = 4.3 V, CNTRL = active - 52 75 VIN = 5 V, CNTRL = active - 71 99 Off Supply Current IQ(off) CNTRL = inactive, OUT = open - - 1 Off Switch Current IDS(off) CNTRL = inactive, OUT = 0 - - 1 IRB VOUT = 5 V, VIN = 1.2 V, VEN = inactive - - 10 VIN = 1.2 V, IL = 100 mA, TA = 25 °C - 66 76 Reverse Blocking Current On-Resistance RDS(on) On-Resistance Temp.-Coefficient CNTRL Input Low Voltagec CNTRL Input High Voltage Output Pulldown Resistance Output Turn-On Delay Time Output Turn-On Rise Time Output Turn-Off Delay Time SiP32413, SiP32414 Output Turn-On Delay Time Output Turn-On Rise Time Output Turn-Off Delay Time 72 62 72 VIN = 3.6 V, IL = 100 mA, TA = 25 °C - 62 72 VIN = 4.3 V, IL = 100 mA, TA = 25 °C - 62 72 VIN = 5 V, IL = 100 mA, TA = 25 °C - 62 72 - 3900 - VIN = 1.2 V - - 0.3 VIN = 1.8 V - - 0.4d VIN = 2.5 V - - 0.5d VIN = 3.6 V - - 0.6d VIN = 4.3 V - - 0.7d VIN = 5 V - m ppm/°C - 0.8d VIN = 1.2 V 0.9 - - VIN = 1.8 V 1.2d - - VIN = 2.5 V 1.4d - - VIN = 3.6 V 1.6d - - VIN = 4.3 V 1.7d - - VIN = 5 V 1.8 - - ISINK VEN = 5.5 V - - 1 µA RPD CNTRL = inactive, TA = 25 °C (SiP32414 and SiP32416 only) - 217 280 td(on) - 140 210 t(on) 80 150 220 - 0.27 1 td(off) VIN = 3.6 V, RLOAD = 10 , CLOAD = 0.1 µF, TA = 25 °C - 2 - t(on) 1.2 2.5 3.8 td(off) - - 0.001 td(on) SiP32416 62 - µA d VIH EN Input Leakage - TCRDS VIL c VIN = 1.8 V, IL = 100 mA, TA = 25 °C VIN = 2.5 V, IL = 100 mA, TA = 25 °C Unit V V µs ms Notes: a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. For VIN outside this range consult typical EN threshold curve. d. Not tested, guarantee by design. Document Number: 71437 S11-2472-Rev. B, 19-Dec-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32413, SiP32414, SiP32416 Vishay Siliconix PIN CONFIGURATION OUT1 8 1 IN1 GND 7 2 CNTRL1 GND 6 3 CNTRL2 OUT2 5 4 IN2 Bottom View Figure 2 - TDFN8 2 mm x 2 mm Package PIN DESCRIPTION Pin Number Name 1 IN1 Function 2 CNTRL1 This is the control pin of the switch side 1 3 CNTRL2 This is the control pin of the switch side 2 4 IN2 5 OUT2 This is the output pin of the switch side 2 6 GND Ground connection 7 GND Ground connection 8 OUT1 This is the output pin of the switch side 1 This is the input pin of the switch side 1 This is the input pin of the switch side 2 TRUTH TABLE SiP32413 TRUTH TABLE SiP32414, SiP32416 CNTRL1 CNTRL2 SW1 SW2 CNTRL1 CNTRL2 SW1 SW2 0 0 ON OFF 0 0 OFF OFF 0 1 ON ON 0 1 OFF ON 1 0 OFF OFF 1 0 ON OFF 1 1 OFF ON 1 1 ON ON TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted) 100 90 80 IQ - Quiescent Current (µA) IQ - Quiescent Current (µA) 80 60 40 20 VIN = 5 V 70 60 50 VIN = 3.6 V 40 30 20 VIN = 1.2 V 10 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VIN (V) Figure 3 - Quiescent Current vs. Input Voltage www.vishay.com 4 0 - 40 - 20 0 20 40 60 80 100 Temperature (°C) Figure 4 - Quiescent Current vs. Temperature Document Number: 71437 S11-2472-Rev. B, 19-Dec-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32413, SiP32414, SiP32416 Vishay Siliconix TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted) 100 0.7 SiP32413 SiP32413 IQ(off) - Off Switch Current (nA) IQ(off) - Off Supply Current (nA) 0.6 0.5 0.4 0.3 0.2 10 1 0.1 VIN = 5 V VIN = 3.6 V VIN = 1.2 V 0.01 0.1 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.001 - 40 5.5 0 20 40 60 80 100 VIN (V) Temperature (°C) Figure 5 - SiP32413 Off Supply Current vs. VIN Figure 6 - SiP32414 Off Supply Current vs. Temperature 1.4 1000 SiP32414 SiP32416 IQ(OFF) - Off Supply Current (nA) 1.2 IQ(OFF) - Off Supply Current (nA) - 20 1.0 0.8 0.6 0.4 0.2 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 100 10 VIN = 5 V 1 VIN = 3.6 V 0.1 0.01 0.001 - 40 5.5 SiP32414 SiP32416 VIN = 1.2 V - 20 0 20 40 60 80 100 VIN (V) Temperature (°C) Figure 7 - SiP32414 and SiP32416 Off Supply Current vs. VIN Figure 8 - SiP32414 and SiP32416 Off Supply Current vs. Temperature 1000 1.0 0.8 IDS(on) - Off Switch Current (nA) IDS(off) - Off Switch Current (nA) 0.9 0.7 0.6 0.5 0.4 0.3 0.2 100 10 VIN = 5 V 1 VIN = 3.6 V 0.1 0.01 VIN = 1.2 V 0.1 0 1.0 1.5 2.0 2.5 3.0 3.5 VIN (V) 4.0 4.5 5.0 5.5 Figure 9 - Off Switch Current vs. Input Voltage Document Number: 71437 S11-2472-Rev. B, 19-Dec-11 0.001 - 40 - 20 0 20 40 Temperature (°C) 60 80 100 Figure 10 - Off Switch Current vs. Temperature www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32413, SiP32414, SiP32416 Vishay Siliconix 72 75 70 70 RDS - On-Resistance (mΩ) RDS - On-Resistance (mΩ) TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted) IO = 2 A 68 IO = 1.5 A IO = 1 A 66 64 62 IO = 0.5 A 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 60 55 50 40 - 40 5.5 - 20 0 20 40 60 80 VIN (V) Temperature (°C) Figure 11 - RDS(on) vs. Input Voltage Figure 12 - RDS(on) vs. Temperature 550 100 235 RPD - Output Pulldown Resistance (Ω) SiP32414 and SiP32416 only VIN = VOUT 500 RPD - Output Pulldown Resistance (Ω) 65 45 IO = 0.1 A 60 1.0 IO = 0.1 A VIN = 5 V 450 400 350 300 250 200 150 230 225 220 215 210 100 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 SiP32414 and SiP32416 only VOUT = VIN = 5 V 205 - 40 5.5 - 20 0 20 40 60 80 100 VIN (V) Temperature (°C) Figure 13 - SiP32414 and SiP32416 Output Pull Down vs. Input Voltage Figure 14 - SiP32414 and SiP32416 Output Pull Down vs. Temperature 1000 1000 VIN = 1.2 V VOUT = 5 V VCNTRL = inactive VIN = 1.2 V VCNTRL = inactive IIN - Input Current (nA) IIN - Input Current (nA) 100 10 1 100 0.1 0.01 1.0 1.5 2.0 2.5 3.0 3.5 VOUT (V) 4.0 4.5 5.0 5.5 Figure 15 - Reverse Blocking Current vs. Output Voltage www.vishay.com 6 10 - 40 - 20 0 20 40 60 Temperature (°C) 80 100 Figure 16 - Reverse Blocking Current vs. Temperature Document Number: 71437 S11-2472-Rev. B, 19-Dec-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32413, SiP32414, SiP32416 Vishay Siliconix TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted) 1.6 160 1.5 150 SiP32413, SiP32414 td(on) - Turn-On Delay Time (µs) CNTRL - Threshold Voltage (V) 1.4 1.3 1.2 1.1 1.0 0.9 VIH 0.8 VIL 0.7 0.6 140 VIN = 5 V CL = 0.1 µF RL = 10 Ω 130 120 110 100 90 80 70 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 60 - 40 5.5 - 20 0 VIN (V) Figure 17 - CNTRL Threshold Voltage vs. Input Voltage 20 40 Temperature (°C) 80 100 Figure 18 - SiP32413 and SiP32414 Turn-On Delay Time vs. Temperature 220 0.22 SiP32413, SiP32414 210 VIN = 5 V CL = 0.1 µF RL = 10 Ω 200 td(off) - Turn-Off Delay Time (µs) t(on) - Turn-On Rise Time (µs) 60 190 180 170 160 150 0.20 SiP32413, SiP32414 VIN = 5 V CL = 0.1 µF RL = 10 Ω 0.18 0.16 0.14 0.12 140 130 - 40 - 20 0 20 40 60 Temperature (°C) 80 0.10 - 40 100 0 20 40 60 80 100 Temperature (°C) Figure 19 - SiP32413 and SiP32414 Rise Time vs. Temperature Figure 20 - SiP32413 and SiP32414 Turn-Off Delay Time vs. Temperature 3.0 5.0 VIN = 5 V CL = 0.1 µF RL = 10 Ω 2.5 4.5 4.0 tR - Rise Time (ms) td(on) - Turn-On Delay Time (ms) - 20 2.0 1.5 1.0 VIN = 5 V CL = 0.1 µF RL = 10 Ω 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.5 0.0 - 40 - 20 0 20 40 60 80 100 0.0 - 40 Temperature (°C) 20 40 Temperature (°C) Figure 21 - SiP32416 Turn-On Delay Time vs. Temperature Figure 22 - SiP32416 Rise Time vs. Temperature Document Number: 71437 S11-2472-Rev. B, 19-Dec-11 - 20 0 60 80 100 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32413, SiP32414, SiP32416 Vishay Siliconix TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted) 0.40 td(off) - Turn-Off Delay Time (µs) 0.35 VIN = 5 V CL = 0.1 µF RL = 10 Ω 0.30 0.25 0.20 0.15 0.10 0.05 0 - 40 - 20 0 20 40 Temperature (°C) 60 80 100 Figure 23 - SiP32416 Turn-Off Delay Time vs. Temperature TYPICAL WAVEFORMS VCNTRL (2 V/div.) VCNTRL (2 V/div.) RL = 7.2 Ω CL = 0.1 µF RL = 7.2 Ω CL = 0.1 µF VOUT (1 V/div.) IOUT (200 mA/div.) VOUT (1 V/div.) IOUT (200 mA/div.) Time (100 µs/div.) Time (1 µs/div.) Figure 24 - SiP32413 Channel 1 Switching (VIN = 3.6 V, RL = 7.2 ) VCNTRL (2 V/div.) Figure 25 - SiP32413 Channel 1 Turn-Off (VIN = 3.6 V, RL = 7.2 ) VCNTRL (2 V/div.) RL = 10 Ω CL = 0.1 µF RL = 10 Ω CL = 0.1 µF VOUT (2 V/div.) VOUT (2 V/div.) IOUT (200 mA/div.) IOUT (200 mA/div.) Time (100 µs/div.) Time (1 µs/div.) Figure 26 - SiP32413 Channel 1 Switching (VIN = 5 V, RL = 10 ) Figure 27 - SiP32413 Channel 1 Turn-Off (VIN = 5 V, RL = 10 ) www.vishay.com 8 Document Number: 71437 S11-2472-Rev. B, 19-Dec-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32413, SiP32414, SiP32416 Vishay Siliconix VCNTRL (2 V/div.) VCNTRL (2 V/div.) RL = 7.2 Ω CL = 0.1 µF RL = 7.2 Ω CL = 0.1 µF VOUT (1 V/div.) IOUT (200 mA/div.) VOUT (1 V/div.) IOUT (200 mA/div.) Time (1 µs/div.) Time (100 µs/div.) Figure 28 - SiP32413 Channel 2 and SiP32414 Switching (VIN = 3.6 V, RL = 7.2 ) VCNTRL (2 V/div.) Figure 29 - SiP32413 Channel 2 and SiP32414 Turn-Off (VIN = 3.6 V, RL = 7.2 ) VCNTRL (2 V/div.) RL = 10 Ω CL = 0.1 µF RL = 10 Ω CL = 0.1 µF VOUT (2 V/div.) VOUT (2 V/div.) IOUT (200 mA/div.) IOUT (200 mA/div.) Time (100 µs/div.) Time (1 µs/div.) Figure 30 - SiP32413 Channel 2 and SiP32414 Switching (VIN = 5 V, RL = 10 ) Figure 31 - SiP32413 Channel 2 and SiP32414 Turn-Off (VIN = 5 V, RL = 10 ) VCNTRL (2 V/div.) VCNTRL (2 V/div.) RL = 7.2 Ω CL = 0.1 µF VOUT (1 V/div.) RL = 7.2 Ω CL = 0.1 µF IOUT (200 mA/div.) VOUT (1 V/div.) IOUT (200 mA/div.) Time (2 ms/div.) Figure 32 - SiP32416 Switching (VIN = 3.6 V, RL = 7.2 ) Document Number: 71437 S11-2472-Rev. B, 19-Dec-11 Time (1 µs/div.) Figure 33 - SiP32416 Turn-Off (VIN = 3.6 V, RL = 7.2 ) www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32413, SiP32414, SiP32416 Vishay Siliconix VCNTRL (2 V/div.) VCNTRL (2 V/div.) RL = 10 Ω CL = 0.1 µF VOUT (2 V/div.) RL = 10 Ω CL = 0.1 µF VOUT (2 V/div.) IOUT (200 mA/div.) IOUT (200 mA/div.) Time (2 ms/div.) Time (1 µs/div.) Figure 34 - SiP32416 Switching (VIN = 5 V, RL = 10 ) Figure 35 - SiP32416 Turn-Off (VIN = 5 V, RL = 10 ) BLOCK DIAGRAM Reverse Blocking IN1 CNTRL1 OUT1 Logic Control Charge Pump Turn On Slew Rate Control + GND + CNTRL2 Logic Control Charge Pump Turn On Slew Rate Control IN2 SiP32414 and SiP32416 only OUT2 Reverse Blocking Figure 36 - Functional Block Diagram PCB LAYOUT Top Bottom Figure 37 - PCB Layout for TDFN8 2 mm x 2 mm (type: FR4, size: 1.2" x 1.3", thickness: 0.062", copper thickness: 2 oz.) www.vishay.com 10 Document Number: 71437 S11-2472-Rev. B, 19-Dec-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32413, SiP32414, SiP32416 Vishay Siliconix DETAILED DESCRIPTION SiP32413, SiP32414 and SiP32416 are dual n-channel power MOSFETs designed as high side load switch with slew rate control to prevent in-rush current. Once enable the device charges the gate of the power MOSFET to 5 V gate to source voltage while controlling the slew rate of the turn on time. The mostly constant gate to source voltage keeps the on resistance low through out the input voltage range. For SiP32414, when disable the output discharge circuit turns on to help pull the output voltage to ground more quickly. For all parts, in disable mode, the reverse blocking circuit is activated to prevent current from going back to the input in case the output voltage is higher than the input voltage. Input voltage is needed for the reverse blocking circuit to work properly, it can be as low as VIN(min.). APPLICATION INFORMATION Input Capacitor While bypass capacitors on the inputs are not required, 2.2 µF or larger capacitors for CIN is recommended in almost all applications. The bypass capacitors should be placed as physically close as possible to the device’s input to be effective in minimizing transients on the input. Ceramic capacitors are recommended over tantalum because of their ability to withstand input current surges from low impedance sources such as batteries in portable devices. Output Capacitor A 0.1 µF capacitor or larger across VOUT and GND is recommended to insure proper slew operation. COUT may be increased without limit to accommodate any load transient condition with only minimal affect on the turn on slew rate time. There are no ESR or capacitor type requirement. Control The CNTRL pins are compatible with both TTL and CMOS logic voltage levels. Protection Against Reverse Voltage Condition SiP32413, SiP32414 and SiP32416 contain reverse blocking circuitries to protect the current from going to the input from the output in case where the output voltage is higher than the input voltage when the main switch is off. Supply voltages as low as the minimum required input voltage are necessary for these circuitries to work properly. The maximum power dissipation in any application is dependant on the maximum junction temperature, TJ(max.) = 125 °C, the junction-to-ambient thermal resistance for the TDFN4 1.2 mm x 1.6 mm package, J-A = 95 °C/W, and the ambient temperature, TA, which may be formulaically expressed as: P (max.) = T J (max.) - T A θJ- A = 125 - TA 95 It then follows that, assuming an ambient temperature of 70 °C, the maximum power dissipation will be limited to about 580 mW. So long as the load current is below the 2.4 A limit, the maximum continuous switch current becomes a function two things: the package power dissipation and the RDS(ON) at the ambient temperature. As an example let us calculate the worst case maximum load current at TA = 70 °C. The worst case RDS(ON) at 25 °C occurs at an input voltage of 1.2 V and is equal to 75 m. The RDS(ON) at 70 °C can be extrapolated from this data using the following formula: RDS(ON) (at 70 °C) = RDS(ON) (at 25 °C) x (1 + TC x T) Where TC is 3400 ppm/°C. Continuing with the calculation we have RDS(ON) (at 70 °C) = 75 m x (1 + 0.0034 x (70 °C - 25 °C)) = 86.5 m The maximum current limit is then determined by P (max.) I LOAD (max.) < R DS(ON ) which in case is 2.6 A, assuming one switch turn on at a time. Under the stated input voltage condition, if the 2.6 A current limit is exceeded the internal die temperature will rise and eventually, possibly damage the device. To avoid possible permanent damage to the device and keep a reasonable design margin, it is recommended to operate the device maximum up to 2.4 A only as listed in the Absolute Maximum Ratings table. Thermal Considerations All three parts are designed to maintain constant output load current. Due to physical limitations of the layout and assembly of the device the maximum switch current is 2.4 A, as stated in the Absolute Maximum Ratings table. However, another limiting characteristic for the safe operating load current is the thermal power dissipation of the package. To obtain the highest power dissipation (and a thermal resistance of 95) the power pad of the device should be connected to a heat sink on the printed circuit board. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71437. Document Number: 71437 S11-2472-Rev. B, 19-Dec-11 www.vishay.com 11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix Case Outline for TDFN8 2 x 2 Index Area (D/2 x E/2) MILLIMETERS A A3 A1 (6) D 7 E 2 DIM. MIN. NOM. MAX. MIN. NOM. A 0.50 0.55 0.60 0.020 0.022 0.024 A1 0.00 - 0.05 0.000 - 0.002 A3 8 1 INCHES 0.152 REF MAX. 0.006 REF b 0.18 0.23 0.28 0.007 0.009 0.011 D 1.95 2.00 2.05 0.077 0.079 0.081 D2 0.75 0.80 0.85 0.030 0.031 0.033 3 6 e E 1.95 2.00 2.05 0.077 0.079 0.081 4 5 E2 1.40 1.45 1.50 0.055 0.057 0.059 K - 0.25 - - 0.010 - L 0.30 0.35 0.40 0.012 0.014 0.016 Top View 0.05 C (7) Side View D2 Note (1) All dimensions are in millimeters which will govern. (2) Max. package warpage is 0.05 mm. (3) Max. allowable burrs is 0.076 mm in all directions. (4) Pin #1 ID on top will be laser/ink marked. (5) Dimension applies to meatlized terminal and is measured between 0.20 mm and 0.25 mm from terminal tip. (6) Applied only for terminals. (7) Applied for exposed pad and terminals. b (5) 1 7 2 6 3 5 4 e E2 8 0.020 BSC ECN: T15-0301-Rev. B, 29-Jun-15 DWG: 5997 L Pin 1 Indicator (Optional) 0.50 BSC K K Bottom View Revison: 29-Jun-15 1 Document Number: 67493 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000