SiP32454, SiP32455 Datasheet

SiP32454, SiP32455
Vishay Siliconix
0.8 V to 2.5 V, 28 mΩ, Slew Rate Controlled Load Switch in WCSP4
DESCRIPTION
FEATURES
The SiP32454 and SiP32455 are slew rate controlled
integrated high side load switches that operate in the input
voltage range from 0.8 V to 2.5 V. The SiP32454 and
SiP32455 are of N-channel MOSFET switching elements
that provide 28 mΩ switch on resistance. They have a 1 ms
at 1.2 V and 1.5 ms at 2.5 V slow slew rate that limits the
in-rush current and minimizes the switching noise. These
devices’ low voltage logic control threshold can interface with
low voltage control I/O directly without extra level shift or
driver. A 2 MΩ pull-down resistor is integrated at logic control
EN pin. SiP32454 integrates a switch OFF output discharge
circuit.
Both SiP32454 and SiP32455 are available in compact wafer
level CSP package, WCSP4 0.8 mm x 0.8 mm with 0.4 mm
pitch.
•
•
•
•
•
•
•
•
Low input voltage, 0.8 V to 2.5 V
Low RON, 28 mΩ typical
Slew rate control
Low logic control with hysteresis
Reverse current blocking when disabled
Integrated output discharge switch for SiP32454
Integrated pull down resistor at EN pin
4 bump WCSP 0.8 mm x 0.8 mm with 0.4 mm pitch
package
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?9991
APPLICATIONS
•
•
•
•
•
•
•
•
Battery operated devices
Smart phones
GPS and PMP
Computer
Medical and healthcare equipment
Industrial and instrument
Cellular phones and portable media players
Game console
TYPICAL APPLICATION CIRCUIT
VIN
IN
OUT
VOUT
SiP32454, SiP32455
CIN
COUT
EN
EN
GND
GND
GND
Figure 1 - SiP32454 and SiP32455 Typical Application Circuit
Document Number: 62531
S12-0967-Rev. A, 07-May-12
For technical questions, contact: [email protected]
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SiP32454, SiP32455
Vishay Siliconix
ORDERING INFORMATION
Temperature Range
- 40 °C to 85 °C
Package
Marking
Part Number
WCSP: 4 Bumps
(2 x 2, 0.4 mm pitch,
208 µm bump height,
0.8 mm x 0.8 mm die size)
AD
SiP32454DB-T2-GE1
AE
SiP32455DB-T2-GE1
Note:
GE1 denotes halogen-free and RoHS compliant
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Supply Input Voltage (VIN)
- 0.3 to 2.75
Enable Input Voltage (VEN)
- 0.3 to 2.75
Output Voltage (VOUT)
- 0.3 to 2.75
Maximum Continuous Switch Current (Imax.)
Unit
V
1.2
Maximum Pulsed Current (IDM) VIN (Pulsed at 1 ms, 10 % Duty Cycle)
A
2
ESD Rating (HBM)
4000
V
Junction Temperature (TJ)
- 40 to 150
°C
Thermal Resistance (θJA)a
280
°C/W
196
mW
Power Dissipation (PD
)a
Notes:
a. Device mounted with all leads and power pad soldered or welded to PC board.
b. Derate 3.6 mW/°C above TA = 70 °C.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating/conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
Parameter
Limit
Input Voltage Range (VIN)
Operating Junction Temperature Range
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Unit
0.8 to 2.5
V
- 40 to 125
°C
For technical questions, contact: [email protected]
Document Number: 62531
S12-0967-Rev. A, 07-May-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiP32454, SiP32455
Vishay Siliconix
SPECIFICATIONS
Parameter
Symbol
Test Conditions Unless Specified
VIN = 1 V, TA = - 40 °C to 85 °C
(Typical values are at TA = 25 °C)
Limits
Unit
Min.a
Typ.b
Max.a
0.8
-
2.5
VIN = 1.2 V, VEN = VIN, OUT = open
-
10
15
VIN = 2.5 V, VEN = VIN, OUT = open
-
34
60
-
-
30
-
-
1
Operating Voltagec
VIN
Quiescent Current
IQ
Off Supply Current
IQ(off)
Off Switch Current
IDS(off)
EN = GND, OUT = 0 V
-
-
30
IRB
VOUT = 2.5 V, VIN = 0.9 V, VEN = 0 V
-
0.001
30
VIN = 1 V, IL = 200 mA, TA = 25 °C
-
30
35
VIN = 1.2 V, IL = 200 mA, TA = 25 °C
-
29
35
VIN = 1.8 V, IL = 200 mA, TA = 25 °C
-
28
35
VIN = 2.5 V, IL = 200 mA, TA = 25 °C
-
28
35
-
4100
-
ppm/°C
-
417
550
Ω
Reverse Blocking Current
RDS(on)
On-Resistance
On-Resistance Temp.-Coefficient
Output Pulldown Resistance
SiP32455
EN = GND, OUT = open
TCRDS
RPD
VEN = 0 V, TA = 25 °C (SiP32454 only)
c
VIL
VIN = 1 V
-
-
0.1
Voltagec
VIH
VIN = 2.5 V
1.5
-
-
EN Input Low Voltage
EN Input High
SiP32454
EN Input Leakage
Output Turn-On Delay Time
Output Turn-On Rise Time
Output Turn-Off Delay Time
IEN
td(on)
tr
td(off)
VIN = 2.5 V, VEN = 0 V
-
-
1
VIN = 2.5 V, VEN = 2.5 V
-
6.5
12
-
0.6
1.2
-
0.6
1.2
0.4
1
1.6
VIN = 1.2 V
VIN = 2.5 V
VIN = 1.2 V
VIN = 2.5 V
RLOAD = 10 Ω, CL = 0.1 µF,
TA = 25 °C
0.5
1.5
2.5
VIN = 1.2 V
-
0.3
1
VIN = 2.5 V
-
0.1
1
V
µA
mΩ
V
µA
ms
µs
Notes:
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. For VIN outside this range consult typical EN threshold curve.
Document Number: 62531
S12-0967-Rev. A, 07-May-12
For technical questions, contact: [email protected]
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SiP32454, SiP32455
Vishay Siliconix
PIN CONFIGURATION
Index-Bump A1
1
OUT
A
A
B
GND
2
IN
2
IN
1
OUT
W
A
D
B
EN
EN
Backside
GND
Bumpside
Figure 2 - WCSP 2 x 2 Package
PIN DESCRIPTION
Pin Number
Name
Function
A1
OUT
This is the output pin of the switch
A2
IN
This is the input pin of the switch
B1
GND
Ground connection
B2
EN
Enable input
BLOCK DIAGRAM
IN
EN
OUT
Control
Logic
Charge
Pump
Turn ON
Slew Rate
Control
GND
For SiP32454 only
Figure 3 - Functional Block Diagram
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Document Number: 62531
S12-0967-Rev. A, 07-May-12
This document is subject to change without notice.
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SiP32454, SiP32455
Vishay Siliconix
45
45
40
40
35
35
IQ - Quiescent Current (μA)
IQ - Quiescent Current (μA)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
30
25
20
15
10
5
VIN = 2.5 V
30
25
20
15
VIN = 1.2 V
10
5
0
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
0
- 40
2.8
VIN = 1 V
- 20
0
VIN (V)
Quiescent vs. Input Voltage
100
80
100
100 000
SiP32454
SiP32454
1200
VIN = 2.5 V
10 000
IIQ(OFF) - Off Supply Current (nA)
IQ(OFF) - Off Supply Current (nA)
80
Quiescent vs. Temperature
1400
1000
800
600
0.8
1.0
1.2
1.4
1.6
1.8 2.0
VIN (V)
2.2
2.4
2.6
VIN = 1.2 V
1000
100
VIN = 1 V
10
400
1
- 40
2.8
Off Supply Current vs. Input Voltage
- 20
0
20
40
60
Temperature (°C)
Off Supply Current vs. Temperature
12
1000
SiP32455
SiP32455
10
IIQ(OFF) - Off Supply Current (nA)
IQ(OFF) - Off Supply Current (nA)
20
40
60
Temperature (°C)
8
6
4
2
0
0.8
1.0
1.2
1.4
1.6
1.8 2.0
VIN (V)
2.2
2.4
2.6
Off Supply Current vs. Input Voltage
Document Number: 62531
S12-0967-Rev. A, 07-May-12
2.8
100
VIN = 2.5 V
VIN = 1.2 V
10
1
VIN = 1 V
0.1
0.01
0.001
- 40
- 20
0
20
40
Temperature (°C)
60
80
100
Off Supply Current vs. Temperature
For technical questions, contact: [email protected]
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiP32454, SiP32455
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1600
100 000
IDS(off) - Off Switch Current (nA)
IDS(off) - Off Switch Current (nA)
1400
VIN = 5 V
10 000
1200
1000
800
600
VIN = 3.6 V
1000
100
VIN = 1.2 V
10
400
200
0.8
1.0
1.2
1.4
1.6
1.8 2.0
VIN (V)
2.2
2.4
2.6
1
- 40
2.8
Off Switch Current vs. Input Voltage
- 20
0
20
40
60
Temperature (°C)
80
100
Off Switch Current vs. Temperature
36
35
34
IO = 0.2 A
VIN = 1.2 V
34
32
RDS - On-Resistance (mΩ)
RDS - On-Resistance (mΩ)
33
IO = 1.2 A
31
30
29
IO = 0.5 A
28
32
30
28
26
24
27
IO = 0.2 A
26
22
25
0.8
1.0
1.2
1.4
1.6
1.8 2.0
VIN (V)
2.2
2.4
2.6
20
- 40
2.8
On Resistance vs. Input Voltage
0
20
40
60
Temperature (°C)
80
100
On Resistance vs. Temperature
160
4.0
3.8
VOUT = 2.5 V
VIN = 0.9 V
140
VIN = 0.9 V
IIN - Input Current (nA)
3.6
IIN - Input Current (nA)
- 20
3.4
3.2
3.0
2.8
120
100
80
60
2.6
40
2.4
20
2.2
2.0
0.8
1.0
1.2
1.4
1.6
1.8
2.0
VOUT (V)
2.2
2.4
2.6
2.8
Reverse Blocking Current vs. Output Voltage
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0
- 40
- 20
0
20
40
60
80
100
Temperature (°C)
Reverse Blocking Current vs. Temperature
For technical questions, contact: [email protected]
Document Number: 62531
S12-0967-Rev. A, 07-May-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiP32454, SiP32455
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
450
SiP32454 only
VOUT = VIN
450
RPD - Output Pulldown Resistance (Ω)
RPD - Output Pulldown Resistance (Ω)
460
440
430
420
410
400
0.8
1.0
1.2
1.4
1.6
1.8 2.0
VIN (V)
2.2
2.4
2.6
SiP32454 only
VOUT = VIN = 2.5 V
440
430
420
410
400
390
- 40
2.8
1.6
7
1.4
6
1.2
1
VIH
0.8
VIL
0.6
0.4
20
40
60
Temperature (°C)
80
100
VIN = 2.5 V
5
4
3
2
1
0.2
0
0
0.8
1.0
1.2
1.4
1.6
1.8 2.0
VIN (V)
2.2
2.4
2.6
0.0
2.8
0.5
0.8
2.0
2.5
2.50
VIN = 2.5 V
CL = 0.1 μF
RL = 10 Ω
2.25
2.00
tr - Rise Time (ms)
0.7
0.6
0.5
0.4
1.50
1.25
1.00
0.75
0.2
0.50
0.1
0.25
- 20
0
20
40
Temperature (°C)
60
80
Turn-On Delay Time vs. Temperature
Document Number: 62531
S12-0967-Rev. A, 07-May-12
100
VIN = 2.5 V
CL = 0.1 μF
RL = 10 Ω
1.75
0.3
0
- 40
1.5
EN Input Leakage vs.VEN
1
0.9
1.0
VEN (V)
EN Threshold Voltage vs. Input Voltage
td(on) - Turn-On Delay Time (ms)
0
Output Pulldown Resistance vs. Temperature
IEN, EN Current (μA)
EN Threshold Voltage (V)
Output Pulldown Resistance vs. Input Voltage
- 20
0.00
- 40
- 20
0
20
40
Temperature (°C)
60
80
100
Rise Time vs. Temperature
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SiP32454, SiP32455
Vishay Siliconix
ELECTRICAL CHARACTERISTICS
0.30
td(off) - Turn-Off Delay Time (μs)
0.25
VIN = 2.5 V
CL = 0.1 μF
RL = 10 Ω
0.20
0.15
0.10
0.05
0.00
- 40
- 20
0
20
40
60
Temperature (°C)
80
100
Turn-Off Delay Time vs. Temperature
TYPICAL WAVEFORMS
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Turn-On Time (VIN = 1.2 V)
Turn-Off Time (VIN = 1.2 V)
Turn-On Time (VIN = 2.5 V)
Turn-Off Time (VIN = 2.5 V)
For technical questions, contact: [email protected]
Document Number: 62531
S12-0967-Rev. A, 07-May-12
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiP32454, SiP32455
Vishay Siliconix
DETAILED DESCRIPTION
SiP32454 and SiP32455 are n-channel power MOSFET
designed as high side load switch. Once enable the device
charge pumps the gate of the power MOSFET to a constant
gate to source voltage for fast turn on time. The mostly
constant gate to source voltage keeps the on resistance low
through out the input voltage range. SiP32454 and SiP32455
are designed with slow slew rate to minimize the inrush
current during turn on. Because the body of the output
n-channel is always connected to GND, it prevents the
current from going back to the input in case the output
voltage is higher than the output. The SiP32454 especially
incorporates an active output pulldown resistor to discharge
output capacitance when the device is off.
APPLICATION INFORMATION
Input Capacitor
While a bypass capacitor on the input is not required,
a 4.7 µF or larger capacitor for CIN is recommended in almost
all applications. The bypass capacitor should be placed as
physically close as possible to the input pin to be effective in
minimizing transients on the input. Ceramic capacitors are
recommended over tantalum because of their ability to
withstand input current surges from low impedance sources
such as batteries in portable devices.
Output Capacitor
A 0.1 µF capacitor across VOUT and GND is recommended
to insure proper slew operation. There is inrush current
through the output MOSFET and the magnitude of the inrush
current depends on the output capacitor, the bigger the COUT
the higher the inrush current. There are no ESR or capacitor
type requirement.
Enable
The EN pin is compatible with CMOS logic voltage levels. It
requires at least 0.1 V or below to fully shut down the device
and 1.5 V or above to fully turn on the device.
P (max.)
=
T J (max.) - T A
θJ- A
=
125 - TA
280
It then follows that, assuming an ambient temperature of
70 °C, the maximum power dissipation will be limited to about
196 mW.
So long as the load current is below the 1.2 A limit, the
maximum continuous switch current becomes a function two
things: the package power dissipation and the RDS(ON) at the
ambient temperature.
As an example let us calculate the worst case maximum load
current at TA = 70 °C. The worst case RDS(ON) at 25 °C is
35 mΩ. The RDS(ON) at 70 °C can be extrapolated from this
data using the following formula:
RDS(ON) (at 70 °C) = RDS(ON) (at 25 °C) x (1 + TC x ΔT)
Where TC is 4100 ppm/°C. Continuing with the calculation
we have
RDS(ON) (at 70 °C) = 35 mΩ x (1 + 0.0041 x (70 °C - 25 °C))
= 42.2 mΩ
The maximum current limit is then determined by
P (max.)
I LOAD (max.) <
R DS(ON )
which in this case is 2.1 A. Under the stated input voltage
condition, if the 2.1 A current limit is exceeded the internal die
temperature will rise and eventually, possibly damage the
device.
To avoid possible permanent damage to the device and keep
a reasonable design margin, it is recommended to operate
the device maximum up to 1.2 A only as listed in the
Absolute Maximum Ratings table.
Protection Against Reverse Voltage Condition
Both the SiP32454 and SiP32455 can block the output
current from going to the input in case where the output
voltage is higher than the input voltage when the main switch
is off.
Thermal Considerations
These devices are designed to maintain a constant output
load current. Due to physical limitations of the layout and
assembly of the device the maximum switch current is 1.2 A
as stated in the Absolute Maximum Ratings table. However,
another limiting characteristic for the safe operating load
current is the thermal power dissipation of the package. To
obtain the highest power dissipation (and a thermal
resistance of 280 °C/W) the device should be connected to a
heat sink on the printed circuit board.
The maximum power dissipation in any application
is dependant on the maximum junction temperature,
TJ(max.) = 125 °C, the junction-to-ambient thermal resistance,
θJ-A = 280 °C/W, and the ambient temperature, TA, which
may be formulaically expressed as:
Document Number: 62531
S12-0967-Rev. A, 07-May-12
For technical questions, contact: [email protected]
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiP32454, SiP32455
Vishay Siliconix
PACKAGE OUTLINE
WCSP: 4 Bumps (2 x 2, 0.4 mm Pitch, 208 µm Bump Height, 0.8 mm x 0.8 mm Die Size)
Mark on backside of die
1
A
0.4
1
2
W
A
4xØb
B
A
e
4 x Ø 0.150 to 0.200
Solder mask dia. - Pad diameter + 0.1
2
D
Index-Bump A1
D
B
0.4
e
D
Note 3
A1
A
Recommended Land Pattern
All dimensions in millimeters
Dimension
A
MILLIMETERS
Nom.
MAX.
Min.
Nom.
MAX.
0.515
0.530
0.545
0.0202
0.0208
0.0214
0.270
0.0098
0.208
0.250
0.260
e
D
INCHES
Min.
A1
b
Bump Note 2
0.0081
0.400
0.720
0.760
0.0102
0.0106
0.0157
0.800
0.0182
0.0193
0.0203
Notes:
1. Laser mark on the backside surface of die.
2. Bumps are SAC396.
3. 0.050 max. coplanarity.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62531
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For technical questions, contact: [email protected]
Document Number: 62531
S12-0967-Rev. A, 07-May-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
WCSP4: 4 Bumps
(2 x 2, 0.4 mm pitch, 208 μm bump height, 0.8 mm x 0.8 mm die size)
Mark on backside of die
1
A
2
1
2
W
A
B
A
B
B
e
D
4 x Ø 0.15 to Ø 0.20
Solder mask dia. - Pad diameter + 0.1
0.4
e
4xØb
D
Pin 1 mark
A
0.4
Note 3
A1
Recommended Land Pattern
All dimensions in millimeters
Bump Note 2
DWG-No: 6004
Notes
(1) Laser mark on the backside surface of die
(2) Bumps are SAC396
(3) 0.05 max. coplanarity
DIM.
A
MILLIMETERS a
NOM.
MAX.
MIN.
0.515
0.530
0.545
0.0202
A1
b
0.208
0.250
e
D
INCHES
MIN.
0.260
0.760
MAX.
0.0208
0.0214
0.0081
0.270
0.0098
0.800
0.0182
0.400
0.720
NOM.
0.0102
0.0106
0.0157
0.0193
0.0203
Note
a. Use millimeters as the primary measurement.
S14-0844-Rev. C, 28-Apr-14
1
Document Number: 63459
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
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Document Number: 91000