SiP32408, SiP32409 Datasheet

SiP32408, SiP32409
Vishay Siliconix
1.1 V to 5.5 V, Slew Rate Controlled Load Switch
DESCRIPTION
FEATURES
SiP32408 and SiP32409 are slew rate controlled load
switches designed for 1.1 V to 5.5 V operation.
These devices guarantee low switch on-resistance at 1.2 V
input. They feature a controlled soft-on slew rate of typical
2.5 ms that limits the inrush current for designs of heavy
capacitive load and minimizes the resulting voltage droop at
the power rails.
SiP32408 and SiP32409 feature a low voltage control logic
interface (On/Off interface) that can interface with low voltage
control signals without extra level shifting circuit.
Both SiP32408 and SiP32409 have exceptionally low
shutdown current and provide reverse blocking to prevent
high current flowing into the power source.
SiP32409 integrates a output discharge circuit for fast turn
off.
Both SiP32408 and SiP32409 are available in TDFN4
package of 1.2 mm by 1.6 mm.
•
•
•
•
•
1.1 V to 5.5 V operation voltage range
Flat row RON down to 1.2 V
42 m typical from 1.5 V to 5 V
Slew rate controlled turn-on: 2.5 ms at 3.6 V
Low quiescent current < 1 µA when disabled
10.5 µA typical at VIN = 1.2 V
• Reverse current blocking when switch is off
• Output discharge (SiP32409)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
•
•
•
•
•
•
•
•
PDAs/smart phones
Notebook/netbook computers
Tablet PC
Portable media players
Digital camera
GPS navigation devices
Data storage devices
Optical, industrial, medical, and healthcare devices
TYPICAL APPLICATION CIRCUIT
VIN
IN
OUT
VOUT
SiP32408, SiP32409
C IN
4.7 µF
C OUT
0.1 µF
EN
EN
GND
GND
GND
Figure 1 - SiP32408, SiP32409 Typical Application Circuit
Document Number: 63717
S13-0971-Rev. F, 06-May-13
For technical questions, contact: [email protected]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiP32408, SiP32409
Vishay Siliconix
ORDERING INFORMATION
Temperature Range
Package
- 40 °C to 85 °C
TDFN4 1.2 mm x 1.6 mm
Marking
Part Number
Jx
SiP32408DNP-T1-GE4
Kx
SiP32409DNP-T1-GE4
Notes:
x = Lot code
GE4 denotes halogen-free and RoHS compliant
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Supply Input Voltage (VIN)
- 0.3 to 6
Enable Input Voltage (VEN)
- 0.3 to 6
Output Voltage (VOUT)
- 0.3 to 6
Maximum Continuous Switch Current (Imax.)c
V
3.5
Maximum Repetitive Pulsed Current (1 ms, 10 % Duty Cycle)c
Maximum Non-Repetitive Pulsed Current (100 µs, EN = Active)
Unit
6
c
A
12
ESD Rating (HBM)
7000
V
Junction Temperature (TJ)
- 40 to 150
°C
Thermal Resistance (JA)a
170
°C/W
Power Dissipation (PD)a,b
735
mW
Notes:
a. Device mounted with all leads and power pad soldered or welded to PC board, see PCB layout.
b. Derate 5.9 mW/°C above TA = 25 °C, see PCB layout.
c. TA = 25 °C, see PCB layout
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating/conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
Parameter
Limit
Input Voltage Range (VIN)
Operating Junction Temperature Range (TJ)
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Unit
1.1 to 5.5
V
- 40 to 125
°C
For technical questions, contact: [email protected]
Document Number: 63717
S13-0971-Rev. F, 06-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiP32408, SiP32409
Vishay Siliconix
SPECIFICATIONS
Parameter
Operating Voltagec
Quiescent Current
Symbol
VIN
IQ
Test Conditions Unless Specified
VIN = 5 V, TA = - 40 °C to 85 °C
(Typical values are at TA = 25 °C)
Limits
- 40 °C to 85 °C
Min.a
1.1
Typ.b
-
Max.a
5.5
VIN = 1.2 V, EN = active
-
10.5
17
VIN = 1.8 V, EN = active
-
21
30
VIN = 2.5 V, EN = active
-
34
50
VIN = 3.6 V, EN = active
-
54
90
VIN = 4.3 V, EN = active
-
68
110
VIN = 5 V, EN = active
-
105
180
Off Supply Current
IQ(off)
EN = inactive, OUT = open
-
-
1
Off Switch Current
IDS(off)
EN = inactive, OUT = GND
-
-
1
IRB
VOUT = 5 V, VIN = 0 V, VEN = inactive
-
-
10
VIN = 1.2 V, IL = 100 mA, TA = 25 °C
-
45
52
VIN = 1.8 V, IL = 100 mA, TA = 25 °C
-
42
50
Reverse Blocking Current
On-Resistance
On-Resistance Temp.-Coefficient
EN Input Low Voltagec
EN Input High Voltagec
RDS(on)
VIN = 2.5 V, IL = 100 mA, TA = 25 °C
-
42
50
VIN = 3.6 V, IL = 100 mA, TA = 25 °C
-
42
50
VIN = 4.3 V, IL = 100 mA, TA = 25 °C
-
42
50
VIN = 5 V, IL = 100 mA, TA = 25 °C
-
44
50
-
TCRDS
VIL
VIH
-
3300
VIN = 1.2 V
-
-
0.3
VIN = 1.8 V
-
-
0.4d
VIN = 2.5 V
-
-
0.5d
VIN = 3.6 V
-
-
0.6d
VIN = 4.3 V
-
-
0.7d
VIN = 5 V
-
-
0.8d
VIN = 1.2 V
0.9d
-
-
VIN = 1.8 V
1.2d
-
-
VIN = 2.5 V
1.4d
-
-
VIN = 3.6 V
1.6d
-
-
VIN = 4.3 V
1.7
d
-
-
VIN = 5 V
Unit
V
µA
m
ppm/°C
V
1.8
-
-
EN Input Leakage
ISINK
VEN = 5.5 V
-1
-
1
µA
Output Pulldown Resistance
RPD
EN = inactive, TA = 25 °C, (for SiP32409 only)
-
217
280

Output Turn-On Delay Time
td(on)
-
1.8
-
1.2
2.5
3.8
-
-
0.001
Output Turn-On Rise Time
t(on)
Output Turn-Off Delay Time
td(off)
VIN = 3.6 V, RLOAD = 10 , TA = 25 °C
ms
Notes:
a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. For VIN outside this range consult typical EN threshold curve.
d. Not tested, guarantee by design.
Document Number: 63717
S13-0971-Rev. F, 06-May-13
For technical questions, contact: [email protected]
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SiP32408, SiP32409
Vishay Siliconix
PIN CONFIGURATION
OUT
4
EN
3
1
IN
2
GND
GND
Bottom View
Figure 2 - TDFN4 1.2 mm x 1.6 mm Package
PIN DESCRIPTION
Pin Number
1
2
3
4
Name
IN
GND
EN
OUT
Function
This is the input pin of the switch
Ground connection
Enable input
This is the output pin of the switch
BLOCK DIAGRAM
Reverse
Blocking
IN
OUT
Charge
Pump
SiP32409 only
Output
Pulldown
Turn On
Slew Rate Control
Control
Logic
EN
GND
Figure 3 - Functional Block Diagram
TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
120
140
VIN = 5 V
100
IQ - Quiescent Current (μA)
IQ - Quiescent Current (μA)
120
100
80
60
40
80
60
VIN = 3.6 V
40
20
20
0
1
1.5
2
2.5
3.5
3
VIN (V)
4
4.5
5
5.5
Figure 4 - Quiescent Current vs. Input Voltage
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VIN = 1.2 V
0
- 40
- 20
0
20
40
Temperature (°C)
60
80
100
Figure 5 - Quiescent Current vs. Temperature
For technical questions, contact: [email protected]
Document Number: 63717
S13-0971-Rev. F, 06-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiP32408, SiP32409
Vishay Siliconix
TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
0.7
100
SiP32408
10
SiP32408
IIQ(OFF) - Off Supply Current (nA)
IQ(OFF) - Off Supply Current (nA)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1
1.5
2
2.5
3
3.5
VIN (V)
4
4.5
5
5.5
VIN = 3.6 V
0.1
0.01
VIN = 1.2 V
0.001
0.0001
- 40
Figure 6 - Off Supply Current vs. Input Voltage
- 20
0
20
40
Temperature (°C)
60
80
100
Figure 9 - Off Supply Current vs. Temperature
1.2
1000
1.1
SiP32409
SiP32409
100
IQ(OFF) - Off Supply Current (nA)
IQ(OFF) - Off Supply Current (nA)
VIN = 5 V
1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
VIN = 5 V
10
VIN = 3.6 V
1
0.1
VIN = 1.2 V
0.01
0.3
0.2
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0.001
- 40
- 20
0
VIN (V)
20
40
60
80
100
Temperature (°C)
Figure 7 - Off Supply Current vs. Input Voltage
Figure 10 - Off Supply Current vs. Temperature
1000
1.2
IDS(off) - Off Switch Current (nA)
IDS(off) - Off Switch Current (nA)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
100
10
VIN = 5 V
1
VIN = 3.6 V
0.1
0.01
VIN = 1.2 V
0.3
0.2
1
1.5
2
2.5
3
3.5
VIN (V)
4
4.5
5
5.5
Figure 8 - Off Switch Current vs. Input Voltage
Document Number: 63717
S13-0971-Rev. F, 06-May-13
0.001
- 40
- 20
0
20
40
60
Temperature (°C)
80
100
Figure 11 - Off Switch Current vs. Temperature
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SiP32408, SiP32409
Vishay Siliconix
TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
55
56
54
52
50
IO = 2.0 A
RDS - On-Resistance (mΩ)
RDS - On-Resistance (mΩ)
IO = 0.1 A
VIN = 5 V
IO = 2.5 A
IO = 1.5 A
50
IO = 1.0 A
48
IO = 0.1 A
46
44
42
45
40
35
40
38
1
1.5
2
2.5
3
3.5
VIN (V)
4
4.5
5
30
- 40
5.5
0
20
40
60
80
100
Temperature (°C)
Figure 12 - RDS(on) vs. VIN
Figure 14 - RDS(on) vs. Temperature
240
900
SiP32409 only
VOUT = VIN
800
RPD - Output Pulldown Resistance (Ω)
RPD - Output Pulldown Resistance (Ω)
- 20
700
600
500
400
300
200
100
SiP32409 only
VOUT = VIN = 5 V
235
230
225
220
215
210
205
200
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
VIN (V)
- 20
0
20
40
60
80
100
Temperature (°C)
Figure 13 - Output Pulldown Resistance vs. Input Voltage
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- 40
Figure 15 - Output Pulldown Resistance vs. Temperature
For technical questions, contact: [email protected]
Document Number: 63717
S13-0971-Rev. F, 06-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiP32408, SiP32409
Vishay Siliconix
TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted)
2.2
0
td(on) - Turn-On Delay Time (ms)
IIN - Input Current (nA)
-2
-4
-6
VIN = 0 V
-8
- 10
- 12
0.5
1
1.5
2
2.5
3
3.5
VOUT (V)
4
4.5
5
1.8
1.6
1.4
1.2
- 40
5.5
20
40
60
80
100
0.20
VIN = 5 V
CL = 0.1 μF
RL = 10 Ω
VIN = 5 V
CL = 0.1 μF
RL = 10 Ω
0.18
td(off) - Turn-Off Delay Time (μs)
tr - Rise Time (ms)
0
Figure 18 - Turn-On Delay Time vs. Temperature
3.25
2.75
2.50
2.25
2.00
1.75
- 40
- 20
Temperature (°C)
Figure 16 - Reverse Blocking Current vs. Output Voltage
3.00
VIN = 5 V
CL = 0.1 μF
RL = 10 Ω
2.0
0.16
0.14
0.12
0.10
0.08
- 20
0
20
40
Temperature (°C)
60
80
0.06
- 40
100
Figure 17 - Rise Time vs. Temperature
- 20
0
20
40
Temperature (°C)
60
80
100
Figure 19 - Turn-Off Delay Time vs. Temperature
1.6
1.5
EN Threshold Voltage (V)
1.4
1.3
1.2
VIH
1.1
1.0
VIL
0.9
0.8
0.7
0.6
0.5
1
1.5
2
2.5
3
3.5
VIN (V)
4
4.5
5
5.5
Figure 20 - EN Threshold Voltage vs. Input Voltage
Document Number: 63717
S13-0971-Rev. F, 06-May-13
For technical questions, contact: [email protected]
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SiP32408, SiP32409
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TYPICAL WAVEFORMS
EN
5VOUT
EN
5VOUT
3.6VOUT
3.6VOUT
1.5VOUT
IOUT for 5VOUT
1.5VOUT
IOUT for 5VOUT
IOUT for 3.6VOUT
IOUT for 3.6VOUT
IOUT for 1.5VOUT
IOUT for 1.5VOUT
2 V/Div, 2 A/Div, 2 μs/Div
2 V/Div, 2 A/Div, 2 ms/Div
Figure 21 - Typical Turn-on Delay, Rise Time
COUT = 0.1 µF, CIN = 4.7 µF, IOUT = 1.5 A
Figure 24 - Typical Fall Time
COUT = 0.1 µF, CIN = 4.7 µF, IOUT = 1.5 A
EN
5VOUT
EN
5VOUT
3.6VOUT
3.6VOUT
1.5VOUT
IOUT for 5VOUT
IOUT for 3.6VOUT
IOUT for 1.5VOUT
2 V/Div, 0.25 A/Div, 2 ms/Div
1.5VOUT
IOUT for 5VOUT
IOUT for 3.6VOUT
IOUT for 1.5VOUT
2 V/Div, 0.25 A/Div, 2 μs/Div
Figure 22 - Typical Turn-on Delay, Rise Time
COUT = 0.1 µF, CIN = 4.7 µF, ROUT = 10 
Figure 25 - Typical Fall Time
COUT = 0.1 µF, CIN = 4.7 µF, ROUT = 10 
EN
5VOUT
EN
5VOUT
3.6VOUT
3.6VOUT
1.5VOUT
1.5VOUT
IOUT for 5VOUT
IOUT for 5VOUT
IOUT for 3.6VOUT
IOUT for 3.6VOUT
IOUT for 1.5VOUT
2 V/Div, 2 A/Div, 2 ms/Div
2 V/Div, 2 A/Div, 2 ms/Div
Figure 23 - Typical Turn-on Delay, Rise Time
COUT = 200 µF, CIN = 4.7 µF, IOUT = 1.5 A
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IOUT for 1.5VOUT
Figure 26 - Typical Fall Time
COUT = 200 µF, CIN = 4.7 µF, IOUT = 1.5 A
For technical questions, contact: [email protected]
Document Number: 63717
S13-0971-Rev. F, 06-May-13
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiP32408, SiP32409
Vishay Siliconix
EN
5VOUT
EN
5VOUT
3.6VOUT
3.6VOUT
1.5VOUT
1.5VOUT
IOUT for 5VOUT
IOUT for 5VOUT
IOUT for 3.6VOUT
IOUT for 3.6VOUT
IOUT for 1.5VOUT
IOUT for 1.5VOUT
2 V/Div, 0.25 A/Div, 2 ms/Div
2 V/Div, 0.25 A/Div, 2 ms/Div
Figure 27 - Typical Turn-on Delay, Rise Time
COUT = 200 µF, CIN = 4.7 µF, ROUT = 10 
Figure 28 - Typical Fall Time
COUT = 200 µF, CIN = 4.7 µF, ROUT = 10 
DETAILED DESCRIPTION
SiP32408 and SiP32409 are advanced slew rate controlled
high side load switches consisted of a n-channel power
switch. When the device is enable the gate of the power
switch is turned on at a controlled rate to avoid excessive inrush current. Once fully on the gate to source voltage of the
power switch is biased at a constant level. The design gives
a flat on resistance throughout the operating voltages. When
the device is off, the reverse blocking circuitry prevents
current from flowing back to input if output is raised higher
than input. The reverse blocking mechanism also works in
case of no input applied.
APPLICATION INFORMATION
Input Capacitor
SiP32408 and SiP32409 do not require an input capacitor.
To limit the voltage drop on the input supply caused by
transient inrush currents, an input bypass capacitor is
recommended. A 2.2 µF ceramic capacitor placed as close
to the VIN and GND should be enough. Higher values
capacitor can help to further reduce the voltage drop.
Ceramic capacitors are recommended for their ability to
withstand input current surge from low impedance sources
such as batteries in portable devices.
Output Capacitor
While these devices works without an output capacitor,
an 0.1 µF or larger capacitor across VOUT and GND is
recommended to accommodate load transient condition. It
also help to prevent parasitic inductance forces VOUT below
GND when switching off. Output capacitor has minimal affect
on device’s turn on slew rate time. There is no requirement
on capacitor type and its ESR.
Enable
The EN pin is compatible with both TTL and CMOS logic
voltage levels. Enable pin voltage can be above IN once it is
within the absolute maximum rating range.
For output voltage slew rate control, EN is required to have
at least 50 µs delay after the input voltage get ready to
enable the device.
Protection Against Reverse Voltage Condition
SiP32408 and SiP32409 contain a reverse blocking circuitry
to protect the current from going to the input from the output
in case where the output voltage is higher than the input
voltage when the main switch is off. Reverse blocking works
for input voltage as low as 0 V.
Thermal Considerations
SiP32408 and SiP32409 are designed to maintain a constant
output load current. Due to physical limitations of the layout
and assembly of the device the maximum switch current is
3.5 A, as stated in the Absolute Maximum Ratings table.
However, another limiting characteristic for the safe
operating load current is the thermal power dissipation of the
package. To obtain the highest power dissipation (and a
thermal resistance of 170 °C/W) the power pad of the device
should be connected to a heat sink on the printed circuit
board. Figure 21 shows a typical PCB layout. All copper
traces and vias for the IN and OUT pins should be sized
adequately to carry the maximum continuous current.
The maximum power dissipation in any application is
dependant on the maximum junction temperature,
TJ(max.) = 125 °C, the junction-to-ambient thermal resistance
for the TDFN4 1.2 mm x 1.6 mm package, J-A = 170 °C/W,
and the ambient temperature, TA, which may be formulaically
expressed as:
P (max.)
Document Number: 63717
S13-0971-Rev. F, 06-May-13
=
T J (max.) - T A
θJ- A
For technical questions, contact: [email protected]
=
125 - TA
170
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It then follows that, assuming an ambient temperature of
70 °C, the maximum power dissipation will be limited to about
324 mW.
So long as the load current is below the 3.5 A limit, the
maximum continuous switch current becomes a function of
two things: the package power dissipation and the RDS(on) at
the ambient temperature.
As an example let us calculate the worst case maximum load
current at TA = 70 °C. The worst case RDS(on) at 25 °C occurs
at an input voltage of 1.2 V and is equal to 52 m. The
RDS(on) at 70 °C can be extrapolated from this data using the
following formula:
RDS(on) (at 70 °C) = RDS(on) (at 25 °C) x (1 + TC x DT)
Where TC is 3300 ppm/°C. Continuing with the calculation
we have
RDS(on) (at 70 °C) = 52 m x (1 + 0.0033 x (70 °C - 25 °C))
= 60 m
The maximum current limit is then determined by
P (max.)
I LOAD (max.) <
R DS(ON )
which in this case is 2.3 A. Under the stated input voltage
condition, if the 2.3 A current limit is exceeded the internal die
temperature will rise and eventually, possibly damage the
device.
5A
1 ms
180 mA
4.6 ms
SiP32408 and SiP32409 can safely support 5 A pulse
current repetitively at 25 °C.
Switch Non-Repetitive Pulsed Current
SiP32408 and SiP32409 can withstand inrush current of up
to 12 A for 100 µs at 25 °C when heavy capacitive loads are
connected and the part is already enabled.
Recommended Board Layout
For the best performance, all traces should be as short as
possible to minimize the inductance and parasitic effects.
The input and output capacitors should be kept as close
as possible to the input and output pins respectively.
Connecting the central exposed pad to GND, using wide
traces for input, output, and GND help reducing the case to
ambient thermal impedance.
Reverse
Blocking
IN
OUT
Charge
Pump
Control Logic
Input Buffer
EN
Control and Drive
VOUT > VIN
Detect
Pull Down
Circuit
When VOUT is 0.8 V above the VIN, pull down circuit
will be activated. It connects the EN to GND with a
resistance of around 1 kΩ.
Active EN Pull Down for Reverse Blocking
When an internal circuit detects the condition of VOUT 0.8 V
higher than VIN, it will turn on the pull down circuit connected
to EN, forcing the switching OFF. The pull down value is
about 1 k.
Pulse Current Capability
The device is mounted on the evaluation board shown in the
PCB layout section. It is loaded with pulses of 5 A and 1 ms
for periods of 4.6 ms.
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Document Number: 63717
S13-0971-Rev. F, 06-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiP32408, SiP32409
Vishay Siliconix
EVALUATION BOARD LAYOUT
Top
Bottom
Figure 29 - Evaluation board Layout for TDFN4 1.2 mm x 1.6 mm (type: FR4, size: 1" x 1", thickness: 0.062", copper thickness: 2 oz.)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63717.
Document Number: 63717
S13-0971-Rev. F, 06-May-13
For technical questions, contact: [email protected]
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11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TDFN4 1.2 x 1.6 Case Outline
D
D2
4
b
3
Pin #1 ID
(Optional)
4
K
E
E2
3
1
2
e
Index Area
(D/2 x E/2)
Bottom View
A
A1
Top View
A3
1
L
2
Side View
DIM.
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.45
0.55
0.60
0.017
0.022
0.024
A1
0.00
-
0.05
0.00
-
A3
0.15 REF. or 0.127 REF.
(1)
0.006 or 0.005
0.002
(1)
b
0.20
0.25
0.30
0.008
0.010
0.012
D
1.15
1.20
1.25
0.045
0.047
0.049
D2
0.81
0.86
0.91
0.032
0.034
0.036
e
0.50 BSC
0.020
E
1.55
1.60
1.65
0.061
0.063
0.065
E2
0.45
0.50
0.55
0.018
0.020
0.022
K
L
0.25 typ.
0.25
0.30
0.010 typ.
0.35
0.010
0.012
0.014
ECN: T16-0143-Rev. C, 18-Apr-16
DWG: 5995
Note
(1) The dimension depends on the leadframe that assembly house used.
Revision: 18-Apr-16
Document Number: 65734
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PAD Pattern
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR TDFN4 1.2 x 1.6
0.86
0.50
3
1
2
2.0
0.55
0.20
0.50
0.20
4
0.55
0.30
Recommended Minimum Pads
Dimensions in mm
Document Number: 66558
Revision: 05-Mar-10
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1
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Revision: 02-Oct-12
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Document Number: 91000