SiP32510 Vishay Siliconix 1.2 V to 5.5 V, Slew Rate Controlled Load Switch in TSOT23-6 DESCRIPTION FEATURES SiP32510 is a slew rate controlled load switches designed for 1.2 V to 5.5 V operation. The switch element is of n-channel device that provides low RON of 44 m typically over a wide range of input. SiP32510 has low switch on-resistance starting at 1.5 V input supply. It features a controlled soft on slew rate of typical 1.6 ms that limits the inrush current for designs of heavy capacitive load and minimizes the resulting voltage droop at the power rails. With a typical turn on delay of 0.4 ms, the total turn on time is typically 2 ms. The SiP32510 features a low voltage control logic interface (On/Off interface) that can interface with low voltage control signals without extra level shifting circuit. The SiP32510 has exceptionally low shutdown current and provides reverse blocking to prevent high current flowing into the power source. SiP32510 integrates a switch OFF output discharge circuit. SiP32510 is available in TSOT23-6 package. • • • • • 1.2 V to 5.5 V operation voltage range Flat low RON down to 1.5 V 44 m typical from 1.8 V to 5 V Slew rate controlled turn-on: 1.6 ms at 3.3 V Low quiescent current < 1 µA when disabled Available 10.5 µA typical at VIN = 1.2 V • Reverse current blocking when switch is off, with guaranteed less than 2 µA leakage • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • • • • • • • • • • • PDAs/smart phones Ultrabook and notebook computer Tablet devices Portable media players Digital camera GPS navigation devices Data storage devices Optical, industrial, medical, and healthcare devices Peripherals Office automation Networking TYPICAL APPLICATION CIRCUIT VIN IN OUT VOUT SiP32510 C IN 4.7 µF C OUT 0.1 µF EN GND EN GND GND Figure 1 - SiP32510 Typical Application Circuit ORDERING INFORMATION Temperature Range - 40 °C to 85 °C Package Marking Part Number TSOT23-6 LF SiP32510DT-T1-GE3 Note: GE3 denotes halogen-free and RoHS compliant Document Number: 63577 S13-1533-Rev. C, 08-Jul-13 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32510 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Limit Supply Input Voltage (VIN) - 0.3 to 6 Enable Input Voltage (VEN) - 0.3 to 6 Output Voltage (VOUT) - 0.3 to 6 Maximum Continuous Switch Current (Imax.)c Unit V 3 Maximum Repetitive Pulsed Current (1 ms, 10 % Duty Cycle)c Maximum Non-Repetitive Pulsed Current (100 µs, EN = Active) 6 c A 12 ESD Rating (HBM) >4 ESD Rating (CDM) 1.5 Junction Temperature (TJ) kV - 40 to 150 °C Thermal Resistance (JA) 150 °C/W Power Dissipation (PD)a,b 833 mW a Notes: a. Device mounted with all leads and power pad soldered or welded to PC board, see PCB layout. b. Derate 6.66 mW/°C above TA = 25 °C, see PCB layout. c. TA = 25 °C. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability. RECOMMENDED OPERATING RANGE Parameter Limit Input Voltage Range (VIN) Operating Junction Temperature Range (TJ) Unit 1.2 to 5.5 V - 40 to 125 °C SPECIFICATIONS Parameter Operating Voltagec Quiescent Current Symbol VIN IQ Test Conditions Unless Specified VIN = 5 V, TA = - 40 °C to 85 °C (Typical values are at TA = 25 °C) Limits - 40 °C to 85 °C Min.a 1.2 Typ.b - Max.a 5.5 VIN = 1.2 V, EN = active - 10.5 17 VIN = 1.8 V, EN = active - 21 30 VIN = 2.5 V, EN = active - 34 50 VIN = 3.6 V, EN = active - 54 90 VIN = 4.3 V, EN = active - 68 110 VIN = 5 V, EN = active - 105 180 EN = inactive, OUT = open - - 1 Off Supply Current IQ(off) Off Switch Current IDS(off) EN = inactive, OUT = GND - - 1 IRB VOUT = 5 V, VIN = 0 V, VEN = inactive - - 10 VIN = 1.8 V, IL = 100 mA, TA = 25 °C - 45 53 VIN = 2.5 V, IL = 100 mA, TA = 25 °C - 44 52 VIN = 3.6 V, IL = 100 mA, TA = 25 °C - 44 52 VIN = 4.3 V, IL = 100 mA, TA = 25 °C - 44 52 VIN = 5 V, IL = 100 mA, TA = 25 °C - 46 52 - 3570 - Reverse Blocking Current On-Resistance On-Resistance Temp.-Coefficient www.vishay.com 2 RDS(on) TCRDS For technical questions, contact: [email protected] Unit V µA m ppm/°C Document Number: 63577 S13-1533-Rev. C, 08-Jul-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32510 Vishay Siliconix SPECIFICATIONS Parameter EN Input Low Voltagec EN Input High Voltagec Symbol VIL VIH Test Conditions Unless Specified VIN = 5 V, TA = - 40 °C to 85 °C (Typical values are at TA = 25 °C) Limits - 40 °C to 85 °C VIN = 1.2 V Min.a - Typ.b - Max.a 0.3 VIN = 1.8 V - - 0.4d VIN = 2.5 V - - 0.5d VIN = 3.6 V - - 0.6d VIN = 4.3 V - - 0.7d VIN = 5 V - - 0.8d VIN = 1.2 V 0.9d - - VIN = 1.8 V 1.2d - - VIN = 2.5 V 1.4d - - VIN = 3.6 V 1.6d - - VIN = 4.3 V 1.7d - - VIN = 5 V 1.8 - - Unit V EN Input Leakage ISINK VEN = 5.5 V -1 - 1 Output Pulldown Resistance RPD EN = inactive, TA = 25 °C - 217 280 tON_RESP VIN = 3.3 V, TA = 25 °C - 20 200 µs - 0.4 - 1.3 1.6 2.2 - - 0.001 1.2 - 3 Switch Turn-On Response Time d Output Turn-On Delay Time (50 % EN to 10 % OUT) td(on) Output Turn-On Rise Time (10 % OUT to 90 % OUT) tr Output Turn-Off Delay Time (50 % EN to 90 % OUT) td(off) Output Turn-On Time (50 % EN to 95 % OUT) e t(on) VIN = 3.3 V, RLOAD = 10 , CLOAD = 0.1 µF, TA = 25 °C VIN = 3.3 V, RLOAD = 10 , CLOAD = 100 µF, TA = 25 °C µA ms Notes: a. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. For VIN outside this range consult typical EN threshold curve. d. Not tested, guaranteed by design. e. Not tested, guaranteed by correlation test with 10 , 0.1 µF load. TIMMING WAVEFORMS Figure 2 Document Number: 63577 S13-1533-Rev. C, 08-Jul-13 For technical questions, contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32510 Vishay Siliconix PIN CONFIGURATION 1 6 2 5 3 4 Top View Figure 3 - TSOT23-6 Package PIN DESCRIPTION Pin Number 1, 2 3 4 5, 6 Name OUT EN GND IN Function These are output pins of the switch Enable input Ground connection These are input pins of the switch BLOCK DIAGRAM Reverse Blocking OUT IN Charge Pump Control Logic EN Turn On Slew Rate Control GND Figure 4 - Functional Block Diagram www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 63577 S13-1533-Rev. C, 08-Jul-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32510 Vishay Siliconix TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted) 140 120 VIN = 5 V 100 IQ - Quiescent Current (μA) IQ - Quiescent Current (μA) 120 100 80 60 40 80 60 VIN = 3.6 V 40 20 20 VIN = 1.2 V 0 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 - 40 5.5 - 20 0 20 40 60 80 100 Temperature (°C) VIN (V) Figure 5 - Quiescent Current vs. Input Voltage Figure 8 - Quiescent Current vs. Temperature 1.2 1000 100 1.0 IIQ(OFF) - Off Supply Current (nA) IQ(OFF) - Off Supply Current (nA) 1.1 0.9 0.8 0.7 0.6 0.5 0.4 10 VIN = 5 V 1 VIN = 3.6 V 0.1 0.01 VIN = 1.2 V 0.3 0.2 0.001 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 - 40 - 20 0 VIN (V) 20 40 60 80 100 Temperature (°C) Figure 6 - Off Supply Current vs. Input Voltage Figure 9 - Off Supply Current vs. Temperature 1.2 1000 1.0 IDS(off) - Off Switch Current (nA) IDS(off) - Off Switch Current (nA) 1.1 0.9 0.8 0.7 0.6 0.5 0.4 100 10 1 VIN = 5 V VIN = 3.6 V 0.1 0.01 VIN = 1.2 V 0.3 0.2 0.001 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 - 20 0 20 40 60 80 100 Temperature (°C) VIN (V) Figure 7 - Off Switch Current vs. Input Voltage Document Number: 63577 S13-1533-Rev. C, 08-Jul-13 - 40 Figure 10 - Off Switch Current vs. Temperature For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32510 Vishay Siliconix TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted) 60 60 58 56 55 IO = 2.0 A 54 RDS - On-Resistance (mΩ) RDS - On-Resistance (mΩ) IO = 0.1 A VIN = 5 V IO = 2.5 A IO = 1.5 A IO = 1.0 A 52 IO = 0.1 A 50 48 46 44 50 45 40 42 40 35 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 - 40 - 20 0 VIN (V) 40 60 80 100 Temperature (°C) Figure 11 - On-Resistance vs. Input Voltage Figure 13 - On-Resistance vs. Temperature 800 235 VOUT = VIN 700 RPD - Output Pulldown Resistance (Ω) RPD - Output Pulldown Resistance (Ω) 20 600 500 400 300 200 100 0 VOUT = VIN = 5 V 230 225 220 215 210 205 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VIN (V) - 20 0 20 40 60 80 100 Temperature (°C) Figure 12 - Output Pulldown Resistance vs. Input Voltage www.vishay.com 6 - 40 Figure 14 - Output Pulldown Resistance vs. Temperature For technical questions, contact: [email protected] Document Number: 63577 S13-1533-Rev. C, 08-Jul-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32510 Vishay Siliconix 0 0.6 -2 0.5 td(on) - Turn-On Delay Time (ms) IIN - Input Current (nA) TYPICAL CHARACTERISTICS (internally regulated, 25 °C, unless otherwise noted) -4 -6 VIN = 0V -8 - 10 VIN = 5 V CL = 0.1 μF RL = 10 Ω 0.4 0.3 0.2 0.1 0 - 12 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 - 40 5.5 - 20 0 40 60 80 100 Temperature (°C) VOUT (V) Figure 15 - Reverse Blocking Current vs. Output Voltage Figure 17 - Turn-On Delay Time vs. Temperature 0.20 2.50 VIN = 5 V CL = 0.1 μF RL = 10 Ω 2.30 VIN = 5 V CL = 0.1 μF RL = 10 Ω 0.18 td(off) - Turn-Off Delay Time (μs) 2.40 2.20 tr - Rise Time (ms) 20 2.10 2.00 1.90 1.80 1.70 0.16 0.14 0.12 0.10 0.08 1.60 1.50 0.06 - 40 - 20 0 20 40 60 80 100 - 40 - 20 Temperature (°C) 0 20 40 60 80 100 Temperature (°C) Figure 16 - Rise Time vs. Temperature Figure 18 - Turn-Off Delay Time vs. Temperature 1.6 1.5 EN Threshold Voltage (V) 1.4 1.3 1.2 VIH 1.1 1.0 VIL 0.9 0.8 0.7 0.6 0.5 1 1.5 2 2.5 3 3.5 VIN (V) 4 4.5 5 5.5 Figure 19 - EN Threshold Voltage vs. Input Voltage Document Number: 63577 S13-1533-Rev. C, 08-Jul-13 For technical questions, contact: [email protected] www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32510 Vishay Siliconix TYPICAL WAVEFORMS EN 5Vout EN 5Vout 3.6Vout 3.6Vout 1.5Vout 1.5Vout Iout for 5Vout Iout for 3.6Vout Iout for 1.5Vout 2 V/Div, 2 A/Div, 2 ms/Div Iout for 5Vout Iout for 3.6Vout Iout for 1.5Vout 2 V/Div, 2 A/Div, 2 s/Div Figure 20 - Typical Turn-on Delay, Rise Time COUT = 0.1 µF, CIN = 4.7 µF, IOUT = 1.5 A Figure 23 - Typical Fall Time COUT = 0.1 µF, CIN = 4.7 µF, IOUT = 1.5 A EN 5Vout EN 5Vout 3.6Vout 3.6Vout 1.5Vout 1.5Vout Iout for 5Vout Iout for 3.6Vout Iout for 1.5Vout 2 V/Div, 0.2 A/Div, 2 ms/Div Iout for 5Vout Iout for 3.6Vout Iout for 1.5Vout 2 V/Div, 0.2 A/Div, 2 s/Div Figure 21 - Typical Turn-on Delay, Rise Time COUT = 0.1 µF, CIN = 4.7 µF, ROUT = 10 Figure 24 - Typical Fall Time COUT = 0.1 µF, CIN = 4.7 µF, ROUT = 10 EN 5Vout 5Vout 3.6Vout 3.6Vout 1.5Vout 1.5Vout Iout for 5Vout Iout for 5Vout Iout for 3.6Vout Iout for 3.6Vout Iout for 1.5Vout Iout for 1.5Vout 2 V/Div, 2 A/Div, 500 s /Div 2 V/Div, 2 A/Div, 2 ms/Div Figure 22 - Typical Turn-on Delay, Rise Time COUT = 200 µF, CIN = 4.7 µF, IOUT = 1.5 A www.vishay.com 8 EN Figure 25 - Typical Fall Time COUT = 200 µF, CIN = 4.7 µF, IOUT = 1.5 A For technical questions, contact: [email protected] Document Number: 63577 S13-1533-Rev. C, 08-Jul-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32510 Vishay Siliconix EN 5Vout EN 5Vout 3.6Vout 3.6Vout 1.5Vout 1.5Vout Iout for 5Vout Iout for 3.6Vout Iout for 1.5Vout 2 V/Div, 0.2 A/Div, 2 ms/Div Iout for 5Vout Iout for 3.6Vout Iout for 1.5Vout 2 V/Div, 0.2 A/Div, 2 ms/Div Figure 26 - Typical Turn-on Delay, Rise Time COUT = 200 µF, CIN = 4.7 µF, ROUT = 10 Figure 29 - Typical Fall Time COUT = 200 µF, CIN = 4.7 µF, ROUT = 10 EN 5Vout EN 5Vout 3.6Vout 3.6Vout 1.5Vout 1.5Vout Iout for 5Vout Iout for 5Vout Iout for 3.6Vout Iout for 3.6Vout Iout for 1.5Vout Iout for 1.5Vout 2 V/Div, 2 A/Div, 200 s /Div 2 V/Div, 2 A/Div, 2 ms/Div Figure 27 - Typical Turn-on Delay, Rise Time COUT = 100 µF, CIN = 4.7 µF, IOUT = 1.5 A Figure 30 - Typical Fall Time COUT = 100 µF, CIN = 4.7 µF, IOUT = 1.5 A EN 5Vout 5Vout 3.6Vout 3.6Vout 1.5Vout 1.5Vout Iout for 5Vout Iout for 5Vout Iout for 3.6Vout Iout for 3.6Vout Iout for 1.5Vout Iout for 1.5Vout 2 V/Div, 0.2 A/Div, 1 ms/Div 2 V/Div, 0.2 A/Div, 2 ms/Div Figure 28 - Typical Turn-on Delay, Rise Time COUT = 100 µF, CIN = 4.7 µF, ROUT = 10 Document Number: 63577 S13-1533-Rev. C, 08-Jul-13 EN Figure 31 - Typical Turn-on Delay, Fall Time COUT = 100 µF, CIN = 4.7 µF, ROUT = 10 For technical questions, contact: [email protected] www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32510 Vishay Siliconix DETAILED DESCRIPTION SiP32510 is advanced slew rate controlled high side load switch consisted of a n-channel power switch. When the device is enable the gate of the power switch is turned on at a controlled rate to avoid excessive in-rush current. Once fully on the gate to source voltage of the power switch is biased at a constant level. The design gives a flat on resistance throughout the operating voltages. When the device is off, the reverse blocking circuitry prevents current from flowing back to input if output is raised higher than input. The reverse blocking mechanism also works in case of no input applied. APPLICATION INFORMATION Input Capacitor SiP32510 does not require input capacitor. To limit the voltage drop on the input supply caused by transient inrush currents, a input bypass capacitor is recommended. A 2.2 µF ceramic capacitor placed as close to the VIN and GND should be enough. Higher values capacitor can help to further reduce the voltage drop. Ceramic capacitors are recommended for their ability to withstand input current surge from low impedance sources such as batteries in portable devices. Output Capacitor While these devices work without an output capacitor, an 0.1 µF or larger capacitor across VOUT and GND is recommended to accommodate load transient condition. It also helps preventing parasitic inductance from forcing VOUT below GND when switching off. Output capacitor has minimal affect on device’s turn on slew rate time. There is no requirement on capacitor type and its ESR. Enable The EN pin is compatible with both TTL and CMOS logic voltage levels. Enable pin voltage can be above IN once it is within the absolute maximum rating range. The maximum power dissipation in any application is dependant on the maximum junction temperature, TJ(max.) = 125 °C, the junction-to-ambient thermal resistance for the TSOT23-6 package, J-A = 150 °C/W, and the ambient temperature, TA, which may be formulaically expressed as: P (max.) = T J (max.) - T A θJ- A = 125 - TA 150 It then follows that, assuming an ambient temperature of 70 °C, the maximum power dissipation will be limited to about 367 mW. So long as the load current is below the 3 A limit, the maximum continuous switch current becomes a function of two things: the package power dissipation and the RDS(on) at the ambient temperature. As an example let us calculate the worst case maximum load current at TA = 70 °C and 3.6 V input. The worst case RDS(on) at 25 °C and 3.6 V input is 52 m. The RDS(on) at 70 °C can be extrapolated from this data using the following formula: RDS(on) (at 70 °C) = RDS(on) (at 25 °C) x (1 + TC x T) Where TC is 3570 ppm/°C. Continuing with the calculation we have RDS(on) (at 70 °C) = 52 m x (1 + 0.00357 x (70 °C - 25 °C)) = 60 m The maximum current limit is then determined by P (max.) I LOAD (max.) < R DS(ON ) which in this case is 2.4 A. Under the stated input voltage condition, if the 2.4 A current limit is exceeded the internal die temperature will rise and eventually, possibly damage the device. Reverse Blocking Protection Against Reverse Voltage Condition SiP32510 contains a reverse blocking circuitry to protect the current from going to the input from the output in case where the output voltage is higher than the input voltage when the main switch is off. Reverse blocking works for input voltage as low as 0 V. Thermal Considerations SiP32510 is designed to maintain a constant output load current. Due to physical limitations of the layout and assembly of the device the maximum switch current is 3 A, as stated in the Absolute Maximum Ratings table. However, another limiting characteristic for the safe operating load current is the thermal power dissipation of the package. To obtain the highest power dissipation (and a thermal resistance of 150 °C/W) the IN and OUT pins of the device should be connected to heat sinks on the printed circuit board. All copper traces and vias for the IN and OUT pins should be sized adequately to carry the maximum continuous current. www.vishay.com 10 IN OUT Charge Pump Control Logic Input Buffer EN Control and Drive VOUT > VIN Detect Pull Down Circuit When VOUT is 0.8 V above the VIN, pull down circuit will be activated. It connects the EN to GND with a resistance of around 1 kΩ. Active EN Pull Down for Reverse Blocking When an internal circuit detects the condition of VOUT 0.8 V higher than VIN, it will turn on the pull down circuit connected to EN, forcing the switching OFF. The pull down value is about 1 k.. For technical questions, contact: [email protected] Document Number: 63577 S13-1533-Rev. C, 08-Jul-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP32510 Vishay Siliconix Pulse Current Capability The device is mounted on the evaluation board shown in the PCB layout section. It is loaded with pulses of 5 A and 1 ms for periods of 4.6 ms. 5A 1 ms 180 mA 4.6 ms The SiP32510 can safely support 5 A pulse current repetitively at 25 °C. Switch Non-Repetitive Pulsed Current The SiP32510 can withstand inrush current of up to 12 A for 100 µs at 25 °C when heavy capacitive loads are connected and the part is already enabled. RDS(ON) Measurement As mentioned in the thermal consideration section, the RDS(ON) is an important specification for the load switch. A proper method to measure the RDS(ON) will ensure the proper calculation of the maximum operating power the SiP32510 load switch. The Kelvin connection directly to the input/output pin of the device is used to measure the dropout voltage of the SiP32510. By using the Kelvin connection to measure the dropout voltage will eliminate the measurement error due to the voltage drop caused by the forced power current. As illustrated in the following layout, J6 (OUT-S) is Kelvin connection to the output of SiP32510 and J5 (IN-S) is the Kelvin connection to the input of SiP32510. A current meter is used to measure the output current. RDS(ON) is calculated by the following formula: RDS(on) = Dropout Voltage Output Current Recommended Board Layout For the best performance, all traces should be as short as possible to minimize the inductance and parasitic effects. The input and output capacitors should be kept as close as possible to the input and output pins respectively. Connecting the central exposed pad to GND, using wide traces for input, output, and GND help reducing the case to ambient thermal impedance. Figure 32 - Evaluation Board Layout for TSOT23-6L Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63577. Document Number: 63577 S13-1533-Rev. C, 08-Jul-13 For technical questions, contact: [email protected] www.vishay.com 11 This document is subject to change without notice. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000