UNISONIC TECHNOLOGIES CO., LTD UK1398 Power MOSFET N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING DESCRIPTION The UTC UK1398 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)<40Ω @ VGS=2.5V, ID=10mA * RDS(ON)<20Ω @ VGS=4.0V, ID=10mA * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UK1398G-AE3-R UK1398L-T92-B UK1398G-T92-B UK1398L-T92-K UK1398G-T92-K www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd Package SOT-23 TO-92 TO-92 Pin Assignment 1 2 3 S G D S D G S D G Packing Tape Reel Tape Box Bulk 1 of 4 QW-R502-256.J UK1398 Power MOSFET MARKING SOT-23 TO-92 1398G UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 5 QW-R502-256.J UK1398 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage RATINGS UNIT 50 V ±7.0 V DC ±100 mA Continuous Drain Current ID Pulse(Note 2) ±200 mA SOT-23 200 Power Dissipation PD mW TO-92 625 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width≤10ms, Duty cycle≤50% SYMBOL VDSS VGSS ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current ON CHARACTERISTICS SYMBOL TEST CONDITIONS MIN BVDSS IDSS IGSS VGS=0V, ID=250µA VDS=50V, VGS=0V VGS=±7.0V, VDS=0 V 50 Gate Threshold Voltage VGS(TH) VGS(OFF) 1.0 0.6 Static Drain-Source On-Resistance RDS(ON) VDS=VGS , ID=250µA VDS=3.0V, ID=1.0µA VGS=2.5V, ID=10mA VGS=4.0V, ID=10mA VDS=3.0V, ID=10mA Forward Transconductance gFS DYNAMIC PARAMETERS Input Capacitance CISS VDS=3.0V, VGS=0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) VDD=3.0V, ID=20mA, Turn-ON Rise Time tR VGS(ON)=3.0V, RG=10Ω, Turn-OFF Delay Time tD(OFF) RL=150Ω Turn-OFF Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=1A, VGS=0V UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX UNIT 10 ±5.0 20 1.2 22 14 38 3.0 1.5 40 20 V µA µA V V Ω Ω mS 8 7 3 pF pF pF 15 100 30 35 ns ns ns ns 1.3 V 3 of 5 QW-R502-256.J UK1398 Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (A) Drain-Source On-State Resistance Characteristics 12 VGS=4V Drain Current, ID (mA) 10 VGS=2.5V 8 6 4 2 0 0 50 100 150 200 Drain to Source Voltage, VDS (mV) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 5 QW-R502-256.J UK1398 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-256.J