UNISONIC TECHNOLOGIES CO., LTD BSS139Z Power MOSFET 0.2A, 50V N-CHANNEL POWER MOSFET DESCRIPTION The UTC BSS139Z is an N-Channel power MOSFET, it uses UTC’s advanced technology to provide customers with high switching speed and low threshold voltage. The UTC BSS139Z is suitable for battery-powered products, power management in portable and DC to DC converters, etc. FEATURES * RDS(ON) < 5.6Ω @ VGS=5V, ID=200mA * High switching speed * Low threshold voltage (Min.=0.5V, Max.=1.5V) SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Ordering Number Note: BSS139ZG-AE2-R Pin Assignment: G: Gate D: Drain Package SOT-23-3 1 S Pin Assignment 2 3 G D Packing Tape Reel S: Source MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-862.C BSS139Z Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 50 V Gate-Source Voltage VGSS ±20 V Continuous ID 200 mA Drain Current Pulsed tp≤10µs IDM 800 mA Power Dissipation PD 225 mW Junction Temperature TJ -55~+150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER Junction to Ambient SYMBOL θJA RATINGS 556 UNIT °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL BVDSS Drain-Source Leakage Current Gate-Source Leakage Current IDSS Forward Reverse ON CHARACTERISTICS (Note 1) Gate Threshold Voltage Static Drain-Source On-State Resistance IGSS VGS(TH) RDS(ON) TEST CONDITIONS ID=250µA, VGS=0V VDS=25V, VGS=0V VDS=50V, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V 50 VDS=VGS, ID=1.0mA VGS=2.75V, ID=200mA VGS=5.0V, ID=200mA 0.5 DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, Output Capacitance COSS f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS (Note 2) Turn-ON Delay Time tD(ON) VDD=30V, ID=0.2A Turn-OFF Delay Time tD(OFF) Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 0.1 0.5 +10 -10 V µA µA µA µA 5.6 1.5 10 3.5 V Ω Ω 40 12 3.5 50 25 5.0 pF pF pF 20 20 ns ns 2 of 3 QW-R502-862.C BSS139Z Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage 300 Drain Current vs. Gate Threshold Voltage 1.2 250 1.0 200 0.8 150 0.6 100 0.4 50 0.2 0 0 14 28 42 56 0 0 70 0.6 0.9 1.2 1.5 1.8 Gate Threshold Voltage, VTH (V) Drain-Source Breakdown Voltage, BVDSS (V) Drain Current, ID (A) Drain Current, ID (A) 0.3 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-862.C