AOT9N40 400V,8A N-Channel MOSFET General Description Product Summary The AOT9N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs.These parts are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS 500V@150℃ 8A < 0.8Ω ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT9N40L Top View D TO-220 G G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current Pulsed Drain Current TC=100°C C ID AOT9N40 400 Units V ±30 V 8 5 A IDM 22 Avalanche Current C IAR 3.2 A Repetitive avalanche energy C EAR 150 mJ Single pulsed avalanche energy G EAS Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC dv/dt 300 5 132 mJ V/ns W Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter A,D Maximum Junction-to-Ambient TJ, TSTG 1 -55 to 150 W/ C °C 300 °C AOT9N40 65 Units °C/W 0.5 0.95 °C/W °C/W A Maximum Case-to-sink Maximum Junction-to-Case Rev 0: Dec 2010 PD TL Symbol RθJA RθCS RθJC www.aosmd.com o Page 1 of 5 AOT9N40 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 400 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 500 V ID=250µA, VGS=0V 0.4 o V/ C VDS=400V, VGS=0V 1 VDS=320V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS=5V ID=250µA VGS=10V, ID=4A gFS Forward Transconductance VDS=40V, ID=4A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Maximum Body-Diode Pulsed Current ISM DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz ±100 3.4 µA 4 4.5 nΑ V 0.64 0.8 Ω 1 V 8 0.75 S 8 A 22 A 500 630 760 pF 45 73 100 pF 2 5.7 9 pF 1.2 2.6 4.0 Ω 10 13.1 16 nC VGS=10V, VDS=320V, ID=8A 3.9 nC Qgd Gate Drain Charge 4.8 nC tD(on) Turn-On DelayTime 17 ns tr Turn-On Rise Time 52 ns tD(off) Turn-Off DelayTime 25 ns VGS=10V, VDS=200V, ID=8A, RG=25Ω tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=8A,dI/dt=100A/µs,VDS=100V 150 195 240 Qrr Body Diode Reverse Recovery Charge IF=8A,dI/dt=100A/µs,VDS=100V 1.5 1.9 2.3 30 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal imped ance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=3.2A, VDD=150V, RG=25Ω, Starting T J=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Dec 2010 www.aosmd.com Page 2 of 5 AOT9N40 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 16 VDS=40V -55°C 10V 12 8 6.5V 4 6V 125°C ID(A) ID (A) 10 1 25°C VGS=5.5V 0 0 5 10 15 20 25 0.1 30 0 2 4 6 8 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 2.0 Normalized On-Resistance 3 1.6 RDS(ON) (Ω) 10 VGS=10V 1.2 0.8 0.4 0.0 0 3 6 9 12 15 VGS=10V ID=4A 2.5 2 1.5 1 0.5 0 -100 18 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.2 1.0E+02 40 1.0E+00 IS (A) BVDSS (Normalized) 1.0E+01 1.1 1 125°C 1.0E-01 1.0E-02 25°C 0.9 1.0E-03 0.8 -100 1.0E-04 -50 0 50 100 150 200 TJ (°C) Figure 5:Break Down vs. Junction Temparature Rev 0: Dec 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AOT9N40 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 15 VDS=320V ID=8A Capacitance (pF) VGS (Volts) 12 9 6 Ciss 1000 100 Coss 10 3 Crss 1 0 0 4 8 12 16 Qg (nC) Figure 7: Gate-Charge Characteristics 0.1 20 8 100 10µs 10 ID (Amps) Current rating ID(A) 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 10 6 4 RDS(ON) limited 1ms DC 10ms 0.1 0 100µs 1 2 TJ(Max)=150°C TC=25°C 0.01 0 25 50 75 100 125 150 TCASE (°C) Figure 9: Current De-rating (Note B) 10 ZθJC Normalized Transient Thermal Resistance 1 1 1 10 100 1000 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area for AOT9N40 (Note F) D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.95°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 0.001 0.000001 Ton Single Pulse 0.00001 0.0001 0.001 0.01 0.1 T 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOT9N40 (Note F) Rev 0: Dec 2010 www.aosmd.com Page 4 of 5 AOT9N40 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs Rg + VDC 90% Vdd - 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC Rg - Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev 0: Dec 2010 Vgs Isd L + Vdd VDC - IF trr dI/dt IRM Vds www.aosmd.com Vdd Page 5 of 5