SHENZHENFREESCALE AOT9N40

AOT9N40
400V,8A N-Channel MOSFET
General Description
The AOT9N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply
designs.These parts are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
Features
VDS
500V@150℃
8A
< 0.8Ω
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current
TC=25°C
TC=100°C
Units
V
±30
V
8
5
A
Pulsed Drain Current C
IDM
22
Avalanche Current C
IAR
3.2
A
Repetitive avalanche energy C
EAR
150
mJ
Single pulsed avalanche energy G
EAS
dv/dt
300
5
132
mJ
V/ns
W
1
-55 to 150
W/ C
°C
300
°C
AOT9N40
65
Units
°C/W
0.5
0.95
°C/W
°C/W
Peak diode recovery dv/dt
TC=25°C
B
o
Power Dissipation
Derate above 25 C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
A,D
Maximum Junction-to-Ambient
A
Maximum Case-to-sink
Maximum Junction-to-Case
1/5
ID
AOT9N40
400
PD
TJ, TSTG
TL
Symbol
RθJA
RθCS
RθJC
o
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AOT9N40
400V,8A N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
400
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
RDS(ON)
Gate Threshold Voltage
VDS=5V ID=250µA
Static Drain-Source On-Resistance
VGS=10V, ID=4A
gFS
Forward Transconductance
VDS=40V, ID=4A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
ISM
ID=250µA, VGS=0V, TJ=150°C
500
V
ID=250µA, VGS=0V
0.4
V/ C
VDS=400V, VGS=0V
1
VDS=320V, TJ=125°C
10
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
o
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
±100
3.4
µA
4
4.5
nΑ
V
0.64
0.8
Ω
1
V
8
0.75
S
8
A
22
A
500
630
760
pF
45
73
100
pF
2
5.7
9
pF
1.2
2.6
4.0
Ω
10
13.1
16
nC
VGS=10V, VDS=320V, ID=8A
3.9
nC
Qgd
Gate Drain Charge
4.8
nC
tD(on)
Turn-On DelayTime
17
ns
tr
Turn-On Rise Time
52
ns
tD(off)
Turn-Off DelayTime
25
ns
VGS=10V, VDS=200V, ID=8A,
RG=25Ω
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=8A,dI/dt=100A/µs,VDS=100V
150
195
240
Qrr
Body Diode Reverse Recovery Charge IF=8A,dI/dt=100A/µs,VDS=100V
1.5
1.9
2.3
30
ns
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal imped ance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=3.2A, VDD=150V, RG=25Ω, Starting T J=25°C
2/5
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AOT9N40
400V,8A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
16
VDS=40V
-55°C
10V
12
8
6.5V
4
6V
125°C
ID(A)
ID (A)
10
1
25°C
VGS=5.5V
0
0
5
10
15
20
25
0.1
30
0
2
4
6
8
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
2.0
Normalized On-Resistance
3
1.6
RDS(ON) (Ω)
10
VGS=10V
1.2
0.8
0.4
0.0
0
3
6
9
12
15
VGS=10V
ID=4A
2.5
2
1.5
1
0.5
0
-100
18
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.2
1.0E+02
40
1.0E+00
IS (A)
BVDSS (Normalized)
1.0E+01
1.1
1
125°C
1.0E-01
1.0E-02
25°C
0.9
1.0E-03
0.8
-100
1.0E-04
-50
0
50
100
150
200
TJ (°C)
Figure 5:Break Down vs. Junction Temparature
3/5
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AOT9N40
400V,8A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
15
VDS=320V
ID=8A
Capacitance (pF)
VGS (Volts)
12
9
6
Ciss
1000
100
Coss
10
3
Crss
1
0
0
4
8
12
16
Qg (nC)
Figure 7: Gate-Charge Characteristics
0.1
20
8
100
10µs
10
ID (Amps)
Current rating ID(A)
10
VDS (Volts)
Figure 8: Capacitance Characteristics
100
10
6
4
RDS(ON)
limited
0
100µs
1
1ms
DC
10ms
0.1
2
TJ(Max)=150°C
TC=25°C
0.01
0
25
50
75
100
125
150
TCASE (°C)
Figure 9: Current De-rating (Note B)
10
ZθJC Normalized Transient
Thermal Resistance
1
1
1
10
100
1000
VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOT9N40 (Note F)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.95°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
0.001
0.000001
Ton
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
T
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOT9N40 (Note F)
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AOT9N40
400V,8A N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
VDC
DUT
Qgs
Qgd
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
Rg
+
VDC
90%
Vdd
-
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
Rg
-
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
5/5
Vgs
L
Isd
+ Vdd
VDC
-
IF
trr
dI/dt
IRM
Vds
Vdd
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