AOT11N70/AOTF11N70 700V,11A N-Channel MOSFET General Description Product Summary The AOT11N70 & AOTF11N70 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 800V@150℃ 11A RDS(ON) (at VGS=10V) < 0.87Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT11N70L & AOTF11N70L Top View D TO-220F TO-220 G D G S G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT11N70 Drain-Source Voltage VDS 700 Gate-Source Voltage ±30 Continuous Drain Current VGS TC=25°C TC=100°C AOTF11N70 V 11 ID Units V 11* 7.2 7.2* A Pulsed Drain Current C IDM Avalanche Current C IAR 4 A Repetitive avalanche energy C EAR 120 mJ Single plused avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D EAS dv/dt 240 5 mJ V/ns W 43 271 PD TJ, TSTG -55 to 150 W/ oC °C 300 °C 0.4 TL Symbol RθJA RθCS AOT11N70 65 AOTF11N70 65 Units °C/W 0.5 0.46 -2.5 °C/W °C/W Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev 0: March 2010 50.0 2.1 www.aosmd.com Page 1 of 6 AOT11N70/AOTF11N70 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 700 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 800 V ID=250µA, VGS=0V 0.8 V/ oC VDS=700V, VGS=0V 1 VDS=560V, TJ=125°C 10 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5.5A gFS Forward Transconductance VDS=40V, ID=5.5A VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM 3.8 4.5 nΑ V 0.72 0.87 Ω 1 V Maximum Body-Diode Continuous Current 11 A Maximum Body-Diode Pulsed Current 43 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss ±100 µA Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz Gate Source Charge Qgd Gate Drain Charge 17 S 0.72 1430 1793 2150 pF 116 146 190 pF 8.4 10.5 15 pF VGS=0V, VDS=0V, f=1MHz 1.8 3.6 5.4 Ω 30 37.5 45 nC VGS=10V, VDS=560V, ID=11A 7.8 10 12 nC 12 15 22 nC SWITCHING PARAMETERS Qg Total Gate Charge Qgs 3 tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=11A,dI/dt=100A/µs,VDS=100V 320 400 480 Qrr Body Diode Reverse Recovery Charge IF=11A,dI/dt=100A/µs,VDS=100V 7.2 9 11 VGS=10V, VDS=350V, ID=11A, RG=25Ω 42 ns 74 ns 103 ns 62 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=30mH, IAS=4A, VDD=150V, RG=25Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: March 2010 www.aosmd.com Page 2 of 6 AOT11N70/AOTF11N70 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 20 10V -55°C 6.5V VDS=40V 15 125°C ID(A) ID (A) 10 6V 10 1 5 VGS=5.5V 25°C 0 0 5 10 15 20 25 0.1 30 2 4 VDS (Volts) Fig 1: On-Region Characteristics 2.0 8 10 Normalized On-Resistance 3 1.5 RDS(ON) (Ω) 6 VGS(Volts) Figure 2: Transfer Characteristics 1.0 VGS=10V 0.5 5 10 15 20 VGS=10V ID=5.5A 2 1.5 1 0.5 0 -100 0.0 0 2.5 25 -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2 1.0E+02 40 1.0E+00 IS (A) BVDSS (Normalized) 1.0E+01 1.1 1 125°C 1.0E-01 25°C 1.0E-02 0.9 1.0E-03 0.8 -100 1.0E-04 -50 0 50 100 150 200 TJ (°C) Figure 5:Break Down vs. Junction Temperature Rev 0: March 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOT11N70/AOTF11N70 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 15 1000 Capacitance (pF) 12 VGS (Volts) Ciss VDS=560V ID=11A 9 6 Coss 100 Crss 10 3 1 0 0 10 20 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics 100 1 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 100 RDS(ON) limited 100µs 1 1ms DC 0.1 RDS(ON) limited 10 10µs ID (Amps) 10 ID (Amps) 0.1 60 10ms 10µs 100µs 1 1ms 10ms DC 0.1s 0.1 TJ(Max)=150°C TC=25°C TJ(Max)=150°C TC=25°C 1s 0.01 0.01 1 10 100 1000 10000 1 10 100 1000 10000 VDS (Volts) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT11N70 (Note F) Figure 10: Maximum Forward Biased Safe Operating Area for AOTF11N70 (Note F) Current rating ID(A) 12 9 6 3 0 0 25 50 75 100 125 150 TCASE (°C) Figure 11: Current De-rating (Note B) Rev 0: March 2010 www.aosmd.com Page 4 of 6 AOT11N70/AOTF11N70 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.46°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton 0.01 T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance for AOT11N70 (Note F) ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF11N70 (Note F) Rev 0: March 2010 www.aosmd.com Page 5 of 6 AOT11N70/AOTF11N70 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev 0: March 2010 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com Page 6 of 6