SHENZHENFREESCALE AOT9N70

AOT9N70/AOTF9N70
700V, 9A N-Channel MOSFET
General Description
The AOT9N70 & AOTF9N70 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and
robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply designs.
Features
ID (at VGS=10V)
800V@150℃
9A
RDS(ON) (at VGS=10V)
< 1.2Ω
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT9N70
VDS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
VGS
TC=25°C
TC=100°C
ID
AOTF9N70L
±30
Units
V
V
9
9*
9*
5.8
5.8*
5.8*
A
Pulsed Drain Current C
IDM
33
Avalanche Current C
IAR
3.2
A
Repetitive avalanche energy C
EAR
77
mJ
Single plused avalanche energy G
Peak diode recovery dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
EAS
dv/dt
154
5
50
mJ
V/ns
W
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,D
TJ, TSTG
A
PD
236
1.8
TL
Symbol
RθJA
RθCS
Maximum Case-to-sink
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
1/6
AOTF9N70
700
0.4
-55 to 150
27.8
0.22
300
W/ oC
°C
°C
AOT9N70
65
AOTF9N70
65
AOTF9N70L
65
Units
°C/W
0.5
0.53
-2.5
-4.5
°C/W
°C/W
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AOT9N70/AOTF9N70
700V, 9A N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
700
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V, TJ=150°C
800
V
ID=250µA, VGS=0V
0.84
V/ oC
VDS=700V, VGS=0V
1
VDS=560V, TJ=125°C
10
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=4.5A
gFS
Forward Transconductance
VDS=40V, ID=4.5A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
ISM
3.9
4.5
nΑ
V
0.94
1.2
Ω
10
V
Maximum Body-Diode Continuous Current
9
A
Maximum Body-Diode Pulsed Current
33
A
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
VGS=10V, VDS=560V, ID=9A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
Body Diode Reverse Recovery Charge IF=9A,dI/dt=100A/µs,VDS=100V
Body Diode Reverse Recovery Time
0.74
S
1
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
±100
3
µA
1085
1357
1630
pF
90
113
147
pF
6
7.4
11
pF
2
4
6
Ω
23
28.5
35
nC
5.5
6.8
8.2
nC
9.3
11.6
18
nC
VGS=10V, VDS=350V, ID=9A,
RG=25Ω
35
ns
61
ns
76
ns
48
IF=9A,dI/dt=100A/µs,VDS=100V
ns
300
375
450
6
7.5
9
ns
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=30mH, IAS=3.2A, VDD=150V, RG=25Ω, Starting TJ=25°C
2/6
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AOT9N70/AOTF9N70
700V, 9A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
18
100
10V
VDS=40V
15
6.5V
9
10
ID(A)
ID (A)
12
-55°C
6V
125°C
1
6
25°C
3
VGS=5.5V
0.1
0
0
5
10
15
20
25
2
30
4
VDS (Volts)
Fig 1: On-Region Characteristics
3.0
8
10
Normalized On-Resistance
3
2.5
2.0
RDS(ON) (Ω
Ω)
6
VGS(Volts)
Figure 2: Transfer Characteristics
1.5
1.0
VGS=10V
0.5
2.5
VGS=10V
ID=4.5A
2
1.5
1
0.5
0
0.0
-100
0
4
8
12
16
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
1.2
40
1.0E+00
IS (A)
BVDSS (Normalized)
1.0E+01
1.1
1
125°C
1.0E-01
25°C
1.0E-02
0.9
1.0E-03
0.8
1.0E-04
-100
-50
0
50
100
150
TJ (°C)
Figure 5:Break Down vs. Junction Temparature
3/6
200
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AOT9N70/AOTF9N70
700V, 9A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10000
1000
Capacitance (pF)
VGS (Volts)
Ciss
VDS=560V
ID=9A
12
9
6
Coss
100
10
3
Crss
0
1
0
5
10
15
20
25
30
35
Qg (nC)
Figure 7: Gate-Charge Characteristics
40
100
1
10
VDS (Volts)
Figure 8: Capacitance Characteristics
RDS(ON)
limited
ID (Amps)
1
1ms
DC
10ms
100µs
1
1ms
10ms
DC
0.1
0.1s
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TC=25°C
1s
0.01
0.01
1
10
100
VDS (Volts)
1000
1
10000
10
100
VDS (Volts)
1000
10000
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF9N70 (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT9N70 (Note F)
100
10
RDS(ON)
limited
Current rating ID(A)
10µs
10
ID (Amps)
10µs
RDS(ON)
limited
10
10µs
100µs
0.1
100µs
1
1ms
10ms
DC
0.1s
0.1
8
6
4
2
TJ(Max)=150°C
TC=25°C
1s
0
0.01
1
10
100
VDS (Volts)
1000
Figure 11: Maximum Forward Biased Safe
Operating Area for AOTF9N70L (Note F)
4/6
100
100
10
ID (Amps)
0.1
10000
0
25
50
75
TCASE (°C)
100
125
150
Figure 12: Current De-rating (Note B)
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AOT9N70/AOTF9N70
700V, 9A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.53°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
Ton
0.01
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Normalized Maximum Transient Thermal Impedance for AOT9N70 (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=2.5°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF9N70 (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=4.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance for AOTF9N70 L(Note F)
5/6
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AOT9N70/AOTF9N70
700V, 9A N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
6/6
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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