INTERSIL ISL6161CBZA

ISL6161
®
Data Sheet
October 2, 2008
FN9104.4
Dual Power Distribution Controller
Features
The ISL6161 is a HOT SWAP dual supply power distribution
controller that can be used in PCI-Express applications.
• HOT SWAP Dual Power Distribution and Control for
+12V and +3.3V
Two external N-Channel MOSFETs are driven to distribute
and control power while providing load fault isolation. At
turn-on, the gate of each external N-Channel MOSFET is
charged with a 10µA current source. Capacitors on each
gate (see the “Typical Application Diagram” on page 1),
create a programmable ramp (soft turn-on) to control in-rush
currents. A built-in charge pump supplies the gate drive for
the 12V supply N-Channel MOSFET switch.
Overcurrent protection is facilitated by two external current
sense resistors and FETs. When the current through either
resistor exceeds the user programmed value, the controller
enters the current regulation mode. The time-out capacitor,
CTIM, starts charging as the controller enters the time-out
period. Once CTIM charges to a 2V threshold, both the
N-Channel MOSFETs are latched off. In the event of a hard
and fast fault of at least 3x the programmed current limit
level, the N-Channel MOSFET gates are pulled low
immediately before entering the time-out period. The
controller is reset by a rising edge on the ENABLE pin.
The ISL6161 constantly monitors both output voltages and
reports either one being low on the PGOOD output as a low.
The 12V PGOOD Vth is ~10.8V and the 3.3V Vth is ~2.8V
nominally.
Pinout
ISL6161
(14 LD SOIC)
TOP VIEW
• Provides Fault Isolation
• Programmable Current Regulation Level
• Programmable Time-Out
• Charge Pump Allows the Use of N-Channel MOSFETs
• Power-Good and Overcurrent Latch Indicators
• Adjustable Turn-On Ramp
• Protection During Turn-On
• Two Levels of Current Limit Detection Provide Fast
Response to Varying Fault Conditions
• 1µs Response Time to Dead Short
• 3µs Response Time to 200% Current Overshoot
• Pb-Free Available (RoHS compliant)
Applications
• PCI-Express Applications
• Power Distribution and Control
• Hot Plug, Hot Swap Components
Ordering Information
PART
NUMBER
PART
MARKING
12VS
1
2
13 RILIM
VDD
3
12 GND
14 12VISEN
NC
4
11 CPUMP
ENABLE
5
10 CTIM
3VG
6
9
PGOOD
3VS
7
8
3VISEN
PACKAGE
PKG.
DWG. #
ISL6161IBZA*
(Note)
ISL6161 IBZ
-40 to +85
14 Ld SOIC
(Pb-free)
M14.15
ISL6161CB*
ISL6161CB
0 to +70
14 Ld SOIC
M14.15
0 to +70
14 Ld SOIC
(Pb-free)
M14.15
ISL6161CBZA* 6161CBZ
(Note)
12VG
TEMP.
RANGE
(°C)
*Add “-T” suffix for tape and reel. Please refer to TB347 for details on reel
specifications.
NOTE: These Intersil Pb-free plastic packaged products employ special
Pb-free material sets, molding compounds/die attach materials, and
100% matte tin plate plus anneal (e3 termination finish, which is RoHS
compliant and compatible with both SnPb and Pb-free soldering
operations). Intersil Pb-free products are MSL classified at Pb-free peak
reflow temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020
Typical Application Diagram
CPUMP
RSENSE
12V
OPTIONAL
VDDRFILTER
CGATE
CFILTER
ENABLE
INPUT
3.3V
CGATE
1
ISL6161
12VS 12VISEN
RILIM
12VG
GND
VDD
CPUMP
ENABLE CTIM
3VG PGOOD
3ISEN
3VS
RSENSE
RLOAD
RILIM
CTIM
3.3V
RLOAD
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2003, 2004, 2008. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
Simplified Schematic
RSENSE
12VIN
12VS
2
OC
TO LOAD
12V
R
CLIM
100µA
+
2R
10µA
12VG
ENABLE
OPTIONAL
POR
ENABLE
GND
QPUMP
12V
RISING
EDGE
RESET
CPUMP
10μA
CPUMP
TO VDD
12V
ENABLE
ENABLE
12V
CGATE
10µA
3VG
FALLING
EDGE
DELAY
CTIM
3X
+
CLIM
R
3VS
+
2V
2R
+
OC
CTIM
+
-
-
PGOOD
OC
LATCH
PGOOD
3ISEN
OPTIONAL
ISL6161
RSENSE
FN9104.4
October 2, 2008
5VIN
TO LOAD
ISL6161
R QN
R
Q
S
NC
RILIM
18V
VDD
VDD RFILTER
CFILTER
RILIM
+
3X
18V
CGATE
FALLING
EDGE
DELAY
12ISEN
ISL6161
Pin Descriptions
PIN NUMBER SYMBOL
FUNCTION
DESCRIPTION
1
12VS
12V Source
Connect to source of associated external N-Channel MOSFET switch to sense output
voltage.
2
12VG
12V Gate
Connect to the gate of associated N-Channel MOSFET switch. A capacitor from this node to
ground sets the turn-on ramp. At turn-on this capacitor will be charged to ~17.4V by a 10µA
current source.
3
VDD
Chip Supply
Connect to 12V supply. This can be either connected directly to the +12V rail supplying the
load voltage or to a dedicated VDD +12V supply. If the former is chosen, special attention to
VDD decoupling must be paid to prevent sagging as heavy loads are switched on.
4
NC
Not Connected
5
ENABLE
6
Enable/Reset
ENABLE is used to turn-on and reset the chip. Both outputs turn-on when this pin is driven
low. After a current limit time-out, the chip is reset by the rising edge of a reset signal applied
to the ENABLE pin. This input has 100µA pull-up capability, which is compatible with 3V and
5V open drain and standard logic.
3VG
3V Gate
Connect to the gate of the external 3V N-Channel MOSFET. A capacitor from this node to
ground sets the turn-on ramp. At turn-on, this capacitor will be charged to ~11.4V by a 10µA
current source.
7
3VS
3 Source
Connect to the source side of 3V external N-Channel MOSFET switch to sense output
voltage.
8
3VISEN
3V Current Sense
Connect to the load side of the 3V sense resistor to measure the voltage drop across this
resistor between 3VS and 3VISEN pins.
9
PGOOD
Power-Good indicator Indicates that all output voltages are within specification. PGOOD is driven by an open drain
N-Channel MOSFET. It is pulled low when any output is not within specification.
10
CTIM
11
Current Limit Timing
Capacitor
Connect a capacitor from this pin to ground. This capacitor controls the time between the
onset of current limit and chip shutdown (current limit time-out). The duration of current limit
time-out (in seconds) = 200kΩ x CTIM (Farads).
CPUMP
Charge Pump
Capacitor
Connect a 0.1µF capacitor between this pin and VDD (pin 3). Provides charge storage for
12VG drive.
12
GND
Chip Ground
13
RILIM
Current Limit Set
Resistor
14
12VISEN 12V Current Sense
3
A resistor connected between this pin and ground determines the current level at which
current limit is activated. This current is determined by the ratio of the RILIM resistor to the
sense resistor (RSENSE). The current at current limit onset is equal to
10µA x (RILIM/RSENSE). The ISL6161 is limited to a 10kΩ min. value (OC Vth = 100mV)
resistor whereas the ISL6161 can accommodate a 5kΩ resistor for a lower OC Vth (50mV).
Connect to the load side of sense resistor to measure the voltage drop across this resistor.
FN9104.4
October 2, 2008
ISL6161
Absolute Maximum Ratings TA = +25°C
Thermal Information
VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +16V
12VG, CPUMP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 21V
12VISEN, 12VS . . . . . . . . . . . . . . . . . . . . . . . . . . -5V to VDD + 0.3V
3VISEN, 3VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -5V to 7.5V
PGOOD, RILIM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 7.5V
ENABLE, CTIM, 3VG . . . . . . . . . . . . . . . . . . . . . -0.3V to VDD + 0.3V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2kV (Class 2)
Thermal Resistance (Typical, Note 1)
θJA (°C/W)
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
67
Maximum Junction Temperature (Plastic Package) . . . . . . . +150°C
Maximum Storage Temperature Range . . . . . . . . . .-65°C to +150°C
Pb-Free Reflow Profile. . . . . . . . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
Operating Conditions
VDD Supply Voltage Range . . . . . . . . . . . . . . . . . . +10.5V to +13.2V
Temperature Range (TA)
ISL6161IB. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-40°C to +85°C
ISL6161CB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to +70°C
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
1. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
2. All voltages are relative to GND, unless otherwise specified.
Electrical Specifications
VDD = 12V, CVG = 0.01µF, CTIM = 0.1µF, RSENSE = 0.1Ω, CBULK = 220µF, ESR = 0.5Ω, TA = TJ = -40°C to
+85°C, Unless Otherwise Specified. Parameters with MIN and/or MAX limits are 100% tested at +25°C,
unless otherwise specified. Temperature limits established by characterization and are not
production tested.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
RILIM = 10kΩ
92
100
108
mV
RILIM = 5kΩ
47
53
59
mV
12V CONTROL SECTION
Current Limit Threshold Voltage
(Voltage Across Sense Resistor)
VIL12V
3x Current Limit Threshold Voltage
(Voltage Across Sense Resistor)
3 x VIL12V
RILIM = 10kΩ
250
300
350
mV
RILIM = 5kΩ
100
165
210
mV
±20% Current Limit Response Time
(Current within 20% of Regulated Value)
20%iLrt
200% Current Overload, RILIM = 10kΩ,
RSHORT = 6.0Ω
-
2
-
µs
±10% Current Limit Response Time
(Current within 10% of Regulated Value)
10%iLrt
200% Current Overload, RILIM = 10kΩ,
RSHORT = 6.0Ω
-
4
-
µs
±1% Current Limit Response Time
(Current within 1% of Regulated Value)
1%iLrt
200% Current Overload, RILIM = 10kΩ,
RSHORT = 6.0Ω
-
10
-
µs
RTSHORT
C12VG = 0.01µF
-
500
-
ns
Gate Turn-On Time
tON12V
C12VG = 0.01µF
-
12
-
ms
Gate Turn-On Current
ION12V
C12VG = 0.01µF
8
10
12
µA
3x Gate Discharge Current
3XdisI
12VG = 18V
-
0.75
-
A
10.5
10.8
11.0
V
16.8
17.3
17.9
V
RILIM = 10kΩ
92
100
108
mV
RILIM = 5kΩ
47
53
59
mV
RILIM = 10kΩ
250
300
350
mV
RILIM = 5kΩ
100
155
210
mV
Response Time to Dead Short
12V Undervoltage Threshold
12VVUV
Charge Pumped 12VG Voltage
V12VG
CPUMP = 0.1µF
3.3V CONTROL SECTION
Current Limit Threshold Voltage
(Voltage Across Sense Resistor)
VIL3V
3x Current Limit Threshold Voltage
(Voltage Across Sense Resistor)
3 x VIL3V
±20% Current Limit Response Time
(Current within 20% of Regulated Value)
200% Current Overload, RILIM = 10kΩ,
RSHORT = 2.5Ω
-
2
-
µs
±10% Current Limit Response Time
(Current within 10% of Regulated Value)
200% Current Overload, RILIM = 10kΩ,
RSHORT = 2.5Ω
-
4
-
µs
4
FN9104.4
October 2, 2008
ISL6161
Electrical Specifications
VDD = 12V, CVG = 0.01µF, CTIM = 0.1µF, RSENSE = 0.1Ω, CBULK = 220µF, ESR = 0.5Ω, TA = TJ = -40°C to
+85°C, Unless Otherwise Specified. Parameters with MIN and/or MAX limits are 100% tested at +25°C,
unless otherwise specified. Temperature limits established by characterization and are not
production tested. (Continued)
PARAMETER
SYMBOL
±1% Current Limit Response Time
(Current within 1% of Regulated Value)
TEST CONDITIONS
MIN
TYP
MAX
UNITS
200% Current Overload, RILIM = 10kΩ,
RSHORT = 2.5Ω
-
10
-
µs
RTSHORT
CVG = 0.01µF
-
500
Gate Turn-On Time
tON3V
CVG = 0.01µF
-
5
-
ms
Gate Turn-On Current
ION3V
CVG = 0.01µF
8
10
12
µA
3x Gate Discharge Current
3xdisI
CVG = 0.01µF, ENABLE = Low
0.75
-
A
Response Time To Dead Short
3.3V Undervoltage Threshold
ns
3.3VVUV
2.7
2.85
3.0
V
3VG
11.2
11.9
-
V
IVDD
4
8
10
mA
VDD POR Rising Threshold
9.5
10.0
10.7
V
VDD POR Falling Threshold
9.0
9.4
9.8
V
-
20
-
ms
1.8
2.4
3.2
V
3.3VG High Voltage
SUPPLY CURRENT AND IO SPECIFICATIONS
VDD Supply Current
Current Limit Time-Out
tILIM
CTIM = 0.1µF
ENABLE Pull-up Voltage
PWRN_V
ENABLE Rising Threshold
PWR_Vth
1.1
1.5
2
V
ENABLE Hysteresis
PWR_hys
0.1
0.2
0.3
V
ENABLE Pull-Up Current
PWRN_I
60
80
100
µA
Current Limit Time-Out Threshold (CTIM)
CTIM_Vth
1.8
2
2.2
V
ENABLE pin open
CTIM Charging Current
CTIM_I
8
10
12
µA
CTIM Discharge Current
CTIM_disI
1.7
2.6
3.5
mA
CTIM Pull-Up Current
CTIM_disI
3.5
5
6.5
mA
RILIM Pin Current Source Output
RILIM_Io
90
100
110
µA
Charge Pump Output Current
Qpmp_Io
CPUMP = 0.1µF, CPUMP = 16V
320
560
900
µA
Charge Pump Output Voltage
Qpmp_Vo
No load
17.2
17.4
-
V
Charge Pump Output Voltage - Loaded
Qpmp_VIo
Load current = 100µA
16.2
16.7
-
V
Charge Pump POR Rising Threshold
Qpmp + Vth
15.6
16
16.5
V
Charge Pump POR Falling Threshold
Qpmp - Vth
15.2
15.7
16.2
V
VCTIM = 8V
ISL6161 Description and Operation
The ISL6161 is a multi-featured +12V and +3.3V dual power
supply distribution controller. Its features include programmable
current regulation (CR) limiting and time to latch off.
At turn-on, the gate capacitor of each external N-Channel
MOSFET is charged with a 10µA current source. These
capacitors create a programmable ramp (soft turn-on). A
charge pump supplies the gate drive for the 12V supply control
FET switch driving that gate to 17V.
The load currents pass through two external current sense
resistors. When the voltage across either resistor quickly
exceeds the user programmed Current Regulation voltage
threshold (CRVth) level, the controller enters current regulation.
The CRVth is set by the external resistor value on RILIM pin. At
5
this time, the time-out capacitor, CTIM, starts charging with a
10µA current source and the controller enters the time-out
period. The length of the time-out period is set by the single
external capacitor (see Table 2) placed from the CTIM pin
(pin 10) to ground and is characterized by a lowered gate drive
voltage to the appropriate external N-Channel MOSFET. Once
CTIM charges to 2V, an internal comparator is tripped resulting
in both N-Channel MOSFETs being latched off. If the voltage
across the sense resistors rises slowly in response to an OC
condition, then the CR mode is entered at ~95% of the
programmed CR level. This difference is due to the necessary
hysteresis and response time in the CR control circuitry.
Table 1 shows RSENSE and RILIM recommendations and
resulting CR level for the PCI-Express add-in card connector
sizes specified.
FN9104.4
October 2, 2008
ISL6161
.
TABLE 1. RSENSE AND RILIM RECOMMENDATIONS
PCI-EXPRESS
ADD-IN CARD
CONNECTOR
3.3V RSENSE 12V RSENSE
NOMINAL
(mΩ),
(mΩ),
CRVth
NOMINAL
NOMINAL
RILIM
(mV)
CR (A)
CR (A)
(kΩ)
X1
10
30, 3.3
150, 0.7
100
4.99
15, 3.5
90, 0.6
53
10
30, 3.3
40, 2.5
100
4.99
15, 3.5
20, 2.6
53
10
30, 3.3
16, 6.3
100
4.99
15, 3.5
8, 6.6
53
X4/X8
X16
NOTE: Nominal CR Vth = RILIM x 10µA.
TABLE 2.
CTIM CAPACITOR
(µF)
NOMINAL TIME-OUT PERIOD
(ms)
0.022
4.4
0.047
9.4
0.1
20
NOTE: Nominal time-out period in seconds = CTIM x 200kΩ.
The ISL6161 responds to a load short (defined as a current
level 3x the OC set point with a fast transition) by
immediately driving the relevant N-Channel MOSFET gate to
0V in ~3µs. The gate voltage is then slowly ramped up,
soft-starting the N-Channel MOSFET to the programmed
current regulation limit level. This is the start of the time-out
period if the abnormal load condition still exists. The
programmed current regulation level is held until either the
OC event passes or the time-out period expires. If the former
is the case, then the N-Channel MOSFET is fully enhanced
and the CTIM charging current is diverted away from the
capacitor. If the time-out period expires prior to OC
resolution, then both gates are quickly pulled to 0V turning
off both N-Channel MOSFETs simultaneously.
Upon any UV condition, the PGOOD signal will pull low
when tied high through a resistor to the logic supply. This pin
is a fault indicator but not the OC latch-off indicator. For an
OC latch-off indication, monitor CTIM, pin 10. This pin will
rise rapidly to 12V once the time-out period expires. See
“Simplified Schematic” on page 2 for OC latch-off circuit
suggestion.
The ISL6161 is reset by a rising edge on the ENABLE pin
and is turned on by the ENABLE pin being driven low.
ISL6161 Application Considerations
In a non PCI-Express, motor drive application, Current loop
stabilization is facilitated through a small value resistor in
series with the gate timing capacitor. As the ISL6161 drives
a highly inductive current load, instability characterized by
the gate voltage repeatedly ramping up and down may
appear. A simple method to enhance stability is provided by
the substitution of a larger value gate resistor. Typically, this
situation can be avoided by eliminating long point-to-point
wiring to the load.
With the ENABLE internal pull-up, the ISL6161 is well suited
for implementation on either side of the connector where a
motherboard prebiased condition or a load board staggered
connection is present. In either case, the ISL6161 turns on in
a soft-start mode protecting the supply rail from sudden
current loading.
During the Time-Out delay period with the ISL6161 in
current limit mode, the VGS of the external N-Channel
MOSFETs is reduced driving the N-Channel MOSFET switch
into a high rDS(ON) state. Thus, avoid extended time-out
periods as the external N-Channel MOSFETs may be
damaged or destroyed due to excessive internal power
dissipation. Refer to the MOSFET manufacturers data sheet
for SOA information.
With the high levels of in-rush current e.g., highly capacitive
loads and motor start-up currents, choosing the current
regulation (CR) level is crucial to provide both protection
and still allow for this in-rush current without latching off.
Consider this in addition to the time-out delay when
choosing MOSFETs for your design.
Physical layout of RSENSE resistors is critical to avoid
inadvertently lowering the CR and trip levels. Ideally, trace
routing between the RSENSE resistors and the ISL6161
should be as direct and as short as possible with zero
current in the sense lines.
CORRECT
INCORRECT
TO ISEN AND
RISET
CURRENT
SENSE RESISTOR
FIGURE 1. SENSE RESISTOR PCB LAYOUT
6
FN9104.4
October 2, 2008
ISL6161
Open load detection can be accomplished by monitoring
the ISEN pins. Although gated off, the external FET IDSS will
cause the ISEN pin to float above ground to some voltage
when there is no attached load. If this is not desired, 5k
resistors from the xISEN pins to ground will prevent the
outputs from floating when the external switch FETs are
disabled and the outputs are open.
For PCI-Express applications, the ISL6161 and the
ISL6118 provide the fundamental hotswap function for the
+12V and +3.3V main rails and the +3.3V aux respectively,
as shown in the “PCI-Express Implementation of ISL6161
and ISL6118” on page 10.
Typical Performance Curves
8.4
105
CURRENT (µA)
SUPPLY CURRENT (mA)
8.2
8.0
7.8
7.6
104
103
7.4
7.2
-40
-30
-20 -10
0
10
20
30
40
50
60
70
102
-40
80
-30
-20
-10
TEMPERATURE (°C)
20
30
40
50
60
70
80
60
70
80
FIGURE 3. RILIM SOURCE CURRENT
10.7
2.04
CTIM OC VOLTAGE THRESHOLD (V)
CTIM CURRENT SOURCE (µA)
10
TEMPERATURE (°C)
FIGURE 2. SUPPLY CURRENT
10.6
10.5
10.4
10.3
-40
0
-30 -20
-10
0
10 20 30 40
TEMPERATURE (°C)
50
FIGURE 4. CTIM CURRENT SOURCE
7
60
70
80
2.02
2.00
1.98
1.96
1.94
-40
-30 -20 -10
0
10 20 30 40
TEMPERATURE (°C)
50
FIGURE 5. CTIM OC VOLTAGE THRESHOLD
FN9104.4
October 2, 2008
ISL6161
Typical Performance Curves
(Continued)
2.8750
3.3V UV THRESHOLD (V)
12V UV THRESHOLD (V)
10.920
10.902
10.886
10.870
-40
-20
0
20
40
60
2.8725
2.8700
2.8675
2.8650
-40
80
-20
0
11.930
11.915
11.910
3.3VG
60
80
CHARGE PUMP VOLTAGE
NO LOAD
VOLTAGE (V)
11.920
3.3V GATE DRIVE (V)
12V GATE DRIVE (V)
11.925
17.30
80
17.4
17.34
17.32
60
17.6
11.935
12V VG
40
FIGURE 7. 3.3V UV THRESHOLD
FIGURE 6. 12V UV THRESHOLD
17.36
20
TEMPERATURE (°C)
TEMPERATURE (°C)
17.2
17.0
CHARGE PUMP VOLTAGE
100µA LOAD
16.8
17.28
11.905
17.26
-40
-20
0
20
40
60
16.6
-40
11.900
80
-20
TEMPERATURE (°C)
FIGURE 9. PUMP VOLTAGE
FIGURE 8. 12V, 3V GATE DRIVE
102.5
54.0
VOLTAGE THRESHOLD (mV)
VOLTAGE THRESHOLD (mV)
54.5
12 OC Vth
53.5
3.3 OC Vth
53.0
52.5
-40
0
20
40
TEMPERATURE (°C)
-20
0
20
40
60
80
TEMPERATURE (°C)
FIGURE 10. OC VOLTAGE THRESHOLD WITH RLIM = 5kΩ
8
12 OC VTth
102.0
101.5
3.3 OC Vth
101.0
100.5
-40
-20
0
20
40
60
80
TEMPERATURE (°C)
FIGURE 11. OC VOLTAGE THRESHOLD WITH RLIM = 10kΩ
FN9104.4
October 2, 2008
ISL6161
Typical Performance Curves
(Continued)
10.2
POWER ON RESET (V)
VDD LOW TO HIGH
10.0
9.8
9.6
-40
VDD HIGH TO LOW
-30 -20 -10
0
10
20
30
40
50
60
70
80
TEMPERATURE (°C)
FIGURE 12. POWER-ON RESET VOLTAGE THRESHOLD
9
FN9104.4
October 2, 2008
PCI-Express Implementation of ISL6161 and ISL6118
INTERSIL
ISL6161
INTERSIL
ISL6161
12V, 3.3V
POWER CONTROLLER
SLOT 2 PWREN#
SLOT 1 PWRGD
+12V GATE SWITCH
SLOT 2 PWRGD
3.3V GATE SWITCH
3.3V
3.3V
+12V GATE SWITCH
10
3.3V GATE SWITCH
12V, 3.3V
POWER CONTROLLER
SLOT 1 PWREN#
CONTROLLER
3.3V
+12V
3.3V
PCI-EXPRESS SLOT 2
SLOT 2 PWREN#
SLOT 1 PWREN#
INTERSIL ISL6118
3.3VSB
FN9104.4
October 2, 2008
DUAL 3.3VAUX
POWER CONTROLLER
3.3VAUX
3.3VAUX
SLOT 2 PWRFLT#
SLOT 1 PWRFLT#
ISL6161
PCI-EXPRESS SLOT 1
SLOT 2
PRSNT
SLOT 1 PRSNT
+12V
12V
+12V
ISL6161
Small Outline Plastic Packages (SOIC)
M14.15 (JEDEC MS-012-AB ISSUE C)
N
INDEX
AREA
0.25(0.010) M
H
14 LEAD NARROW BODY SMALL OUTLINE PLASTIC
PACKAGE
B M
E
INCHES
-B-
1
2
3
L
SEATING PLANE
-A-
h x 45o
A
D
-C-
e
µα
A1
B
0.25(0.010) M
C A M
SYMBOL
MIN
MAX
MIN
MAX
NOTES
A
0.0532
0.0688
1.35
1.75
-
A1
0.0040
0.0098
0.10
0.25
-
B
0.013
0.020
0.33
0.51
9
C
0.0075
0.0098
0.19
0.25
-
D
0.3367
0.3444
8.55
8.75
3
E
0.1497
0.1574
3.80
4.00
4
e
C
0.10(0.004)
B S
0.050 BSC
1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of
Publication Number 95.
1.27 BSC
-
H
0.2284
0.2440
5.80
6.20
-
h
0.0099
0.0196
0.25
0.50
5
L
0.016
0.050
0.40
N
NOTES:
MILLIMETERS
α
14
0o
1.27
14
8o
0o
6
7
8o
Rev. 0 12/93
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006
inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Interlead
flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual index
feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater
above the seating plane, shall not exceed a maximum value of
0.61mm (0.024 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions
are not necessarily exact.
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
11
FN9104.4
October 2, 2008