Datasheet

AOD4504
200V N-Channel MOSFET
General Description
Product Summary
The AOD4504 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON).This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
VDS
ID (at VGS=10V)
200V
6A
RDS(ON) (at VGS=10V)
< 400mΩ
100% UIS Tested
100% Rg Tested
TO252
DPAK
Top View
D
Bottom View
D
D
S
G
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current C
V
A
10
1.5
IDSM
TA=70°C
±20
4.5
IDM
TA=25°C
Continuous Drain
Current
Units
V
6
ID
TC=100°C
Maximum
200
A
1
Avalanche Current C
IAS
3
A
Avalanche energy L=3.9mH C
TC=25°C
EAS
18
mJ
Power Dissipation
B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 0: July 2012
2.5
Steady-State
Steady-State
RθJA
RθJC
W
1.6
TJ, TSTG
Symbol
t ≤ 10s
W
21
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
42.5
PD
TC=100°C
-55 to 175
Typ
15
41
2.9
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°C
Max
20
50
3.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AOD4504
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
200
Typ
1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS，ID=250µA
1.7
ID(ON)
On state drain current
VGS=10V, VDS=5V
10
TJ=55°C
±100
nA
2.8
3.7
V
333
400
666
800
A
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VDS=5V, ID=3A
7
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.75
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Qgs
Gate Source Charge
Qgd
VGS=10V, VDS=100V, ID=3A
1
mΩ
S
1
V
6
A
328
VGS=0V, VDS=100V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
µA
5
VGS=10V, ID=3A
Units
V
VDS=200V, VGS=0V
IDSS
Coss
Max
pF
20.5
pF
8
pF
2
3
Ω
82
115
nC
44
53
nC
16
nC
Gate Drain Charge
30
nC
tD(on)
Turn-On DelayTime
6
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
3.5
ns
18
ns
tf
Turn-Off Fall Time
3
ns
trr
Body Diode Reverse Recovery Time
Qrr
IF=3A, dI/dt=500A/µs
35
Body Diode Reverse Recovery Charge IF=3A, dI/dt=500A/µs
150
ns
nC
VGS=10V, VDS=100V, RL=33.3Ω,
RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: July 2012
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Page 2 of 6
AOD4504
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
10V
8
VDS=5V
6V
6
ID(A)
ID (A)
6
4.5V
4
4
125°C
2
2
25°C
VGS=4V
0
0
0
1
2
3
4
1
5
420
Normalized On-Resistance
380
RDS(ON) (mΩ
Ω)
3
4
5
6
2.8
400
360
VGS=10V
340
320
300
2.6
2.4
2.2
VGS=10V
ID=3A
2
17
5
2
10
1.8
1.6
1.4
1.2
1
0.8
280
0
0
2
4
6
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
750
1.0E+01
ID=3A
700
1.0E+00
650
125°C
40
125°C
600
1.0E-01
550
IS (A)
RDS(ON) (mΩ
Ω)
2
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
500
25°C
1.0E-02
450
1.0E-03
400
350
1.0E-04
300
25°C
1.0E-05
250
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: July 2012
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AOD4504
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
600
VDS=100V
ID=3A
500
Capacitance (pF)
VGS (Volts)
8
6
4
400
Ciss
300
200
Coss
2
100
Crss
0
0
0
20
40
60
80
Qg (nC)
Figure 7: Gate-Charge Characteristics
100
0
200
200
100.0
10µs
10.0
TJ(Max)=175°C
TC=25°C
160
10µs
100µs
RDS(ON)
limited
1.0
1ms
10ms
Power (W)
ID (Amps)
50
100
150
VDS (Volts)
Figure 8: Capacitance Characteristics
17
5
2
10
120
80
DC
0.1
40
TJ(Max)=175°C
TC=25°C
0.0
0
0.01
0.1
1
10
VDS (Volts)
100
1000
0.0001
0.001
0.01
0.1
01
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
40
RθJC=3.5°C/W
1
PD
0.1
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: July 2012
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Page 4 of 6
AOD4504
50
10
40
8
Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
6
4
2
10
0
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 12: Power De-rating (Note F)
0
175
25
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
175
10000
TA=25°C
Power (W)
1000
17
5
2
10
100
10
1
1E-05
0.001
0.1
10
1000
0
18
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=50°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: July 2012
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Page 5 of 6
AOD4504
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0: July 2012
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6