AOD466 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD466 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. VDS (V) = 25V ID = 30A (VGS = 10V) RDS(ON) < 14 mΩ (VGS = 10V) RDS(ON) < 24 mΩ (VGS = 4.5V) -RoHS Compliant -Halogen Free* 100% UIS Tested! 100% Rg Tested! TO-252 D-PAK Top View D Bottom View D G S S G S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current G Avalanche Current C C Repetitive avalanche energy 0.1mH C TC=25°C Power Dissipation B TC=100°C TA=25°C Power Dissipation A Units V ±20 V 30 TC=100°C Pulsed Drain Current Maximum 25 TA=70°C 25 IAR 20 A 20 mJ 70 EAR 30 PD W 15 2.5 PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A B Steady-State Maximum Junction-to-Case Alpha & Omega Semiconductor, Ltd. A ID IDM W 1.6 -55 to 175 Symbol RθJA RθJC Typ 15 41 3.6 °C Max 20 50 5 Units °C/W °C/W °C/W www.aosmd.com AOD466 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250uA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250μA 1 ID(ON) On state drain current VGS=10V, VDS=5V 70 VGS=10V, ID=30A TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current IS VDS=5V, ID=30A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge V 100 nA 1.8 2.5 V 11.1 14 A 15.5 19 mΩ 24 mΩ 1 V 25 A 1000 pF 30 0.74 830 VGS=0V, VDS=12.5V, f=1MHz μA 5 VGS(th) VSD Units 1 TJ=55°C Static Drain-Source On-Resistance Max 25 VDS=20V, VGS=0V IGSS RDS(ON) Typ S 224 pF 127 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=12.5V, ID=30A pF 0.93 1.5 Ω 15.3 19 nC 7.4 9 nC Qgs Gate Source Charge 2.7 nC Qgd Gate Drain Charge 4.3 nC tD(on) Turn-On DelayTime 8 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=10V, VDS=12.5V, RL=0.42Ω, RGEN=3Ω IF=30A, dI/dt=100A/μs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/μs 11.7 ns 30 ns 11 ns 23.5 30 12.8 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. *This device is guaranteed green after data code 8X11 (Sep 1 ST 2008). Rev1: Sep. 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD466 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 80 VDS=5V 10V 6V 60 30 ID(A) ID (A) 4.5V 40 125°C 20 25°C 10 20 VGS=3V 0 0 0 1 2 3 4 2 5 2.5 3.5 4 4.5 5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 25 1.6 Normalized On-Resistance VGS=4.5V 20 RDS(ON) (mΩ) 3 15 10 VGS=10V VGS=10V ID=30A 1.4 1.2 VGS=4.5V ID=20A 1 5 0 5 10 15 20 25 30 35 40 0.8 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 40 1.0E+02 35 1.0E+01 ID=30A 125°C 1.0E+00 25 IS (A) RDS(ON) (mΩ) 30 125°C 20 1.0E-01 1.0E-02 25°C 1.0E-03 1.0E-04 15 25°C 10 2.00 1.0E-05 4.00 6.00 8.00 10.00 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOD466 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1400 VDS=12.5V ID=30A 1200 Capacitance (pF) VGS (Volts) 8 6 4 1000 Ciss 800 600 400 Coss 200 2 Crss 0 0 0 0 2 4 6 8 10 12 14 16 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100 200 RDS(ON) limited 10μs Power (W) ID (Amps) DC 1ms 1 0.1 1 120 80 40 TJ(Max)=175°C, TA=25°C 0.1 TJ(Max)=175°C TC=25°C 160 100μs 10 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Single Pulse 0.01 0.00001 Ton 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD466 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 35 tA = 30 L⋅ ID 30 BV − VDD Power Dissipation (W) ID(A), Peak Avalanche Current 35 25 20 15 TA=25°C 10 25 20 15 10 5 5 0.00001 0 0.0001 0.001 0 25 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) 35 50 TA=25°C 30 25 Power (W) Current rating ID(A) 40 20 15 30 20 10 10 5 0 0.0001 0.001 0 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note B) ZθJA Normalized Transient Thermal Resistance 10 175 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 0.01 0.001 0.00001 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W Single Pulse 0.0001 0.001 0.01 0.1 PD Ton 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD466 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC Rg - 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id Vgs Vgs + Vdd VDC Rg - I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. + Vdd VDC - IF t rr dI/dt I RM Vdd Vds www.aosmd.com