AOD516/AOI516/AOY516 30V N-Channel AlphaMOS General Description Product Summary VDS • Latest Trench Power MOSFET technology • Very Low RDS(on) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application 30V 46A RDS(ON) (at VGS=10V) < 5mΩ RDS(ON) (at VGS = 4.5V) < 10mΩ 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial TO252 DPAK: AOD516 ID (at VGS=10V) TO-251B IPAK: AOI516/AOY516 D TopView Top View Bottom View Bottom View D D D S D G G S D S G S VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C ±20 V A 170 18 IDSM TA=70°C Units V 36 IDM TA=25°C Continuous Drain Current Maximum 30 46 ID TC=100°C S D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage G A 14 Avalanche Current C IAS 29 A Avalanche energy L=0.1mH C EAS 42 mJ VDS Spike VSPIKE 36 V 100ns TC=25°C Power Dissipation B PD TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev.5.0: July 2013 2.5 Steady-State Steady-State RθJA RθJC W 1.6 TJ, TSTG Symbol t ≤ 10s W 25 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 50 -55 to 175 Typ 16 41 2.5 www.aosmd.com °C Max 20 50 3 Units °C/W °C/W °C/W Page 1 of 6 AOD516/AOI516/AOY516 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V Typ 30 1 TJ=55°C Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 5 1.8 VGS=10V, ID=20A 100 nA 2.6 V 4 5 5.4 6.8 10 Static Drain-Source On-Resistance VGS=4.5V, ID=20A 7.1 gFS Forward Transconductance VDS=5V, ID=20A 83 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous CurrentG DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz µA 2.2 RDS(ON) TJ=125°C Units V VDS=30V, VGS=0V IGSS Max mΩ mΩ S 1 V 46 A 1333 pF 512 pF 42 pF 1.7 2.6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 18.3 33 nC Qg(4.5V) Total Gate Charge 8.5 17 nC Qgs Gate Source Charge Qgd VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A 0.8 4.8 nC Gate Drain Charge 2.5 nC tD(on) Turn-On DelayTime 7.5 ns tr Turn-On Rise Time 4.8 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 23.3 ns 4.5 ns IF=20A, dI/dt=500A/µs 14.1 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 16.2 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.5.0: July 2013 www.aosmd.com Page 2 of 6 AOD516/AOI516/AOY516 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V 4.5V 6V 80 VDS=5V 80 8V 4V 60 ID(A) ID (A) 60 3.5V 40 40 20 20 125°C 25°C VGS=3V 0 0 0 1 2 3 4 0 5 10 2 3 4 5 6 Normalized On-Resistance 1.6 8 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 6 4 VGS=10V 2 0 VGS=10V ID=20A 1.4 1.2 1 VGS=4.5V ID=20A 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 12 1.0E+02 ID=20A 1.0E+01 40 9 125°C IS (A) RDS(ON) (mΩ Ω) 1.0E+00 6 1.0E-02 3 125°C 1.0E-01 25°C 1.0E-03 25°C 1.0E-04 0 1.0E-05 2 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.5.0: July 2013 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOD516/AOI516/AOY516 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1800 Ciss 1400 Capacitance (pF) VGS (Volts) 1600 VDS=15V ID=20A 8 6 4 1200 1000 800 Coss 600 400 2 Crss 200 0 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 0 20 250 10µs RDS(ON) limited 100µs 10.0 1ms DC 10ms 1.0 TJ(Max)=150°C TC=25°C 0.1 TJ(Max)=150°C TC=25°C 10µs Power (W) ID (Amps) 30 300 1000.0 100.0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 200 150 100 50 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton on/T TJ,PK J,PK=TC C+PDM DM.ZθJC θJC.RθJC θJC 1 descendingorder order InIndescending D=0.5,0.3, 0.3,0.1, 0.1,0.05, 0.05,0.02, 0.02,0.01, 0.01,single singlepulse pulse D=0.5, =5°C/W RθJC θJC=3°C/W 0.1 Single Pulse Single Pulse 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.5.0: July 2013 www.aosmd.com Page 4 of 6 AOD516/AOI516/AOY516 60 60 50 50 Current rating ID(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 30 20 10 40 30 20 10 0 0 0 25 50 75 100 125 TCASE (° °C) Figure 12: Power De-rating (Note F) 150 0 25 50 75 100 125 150 TCASE (° °C) Figure 13: Current De-rating (Note F) 175 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=50°C/W 0.1 Single Pulse 0.01 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.5.0: July 2013 www.aosmd.com Page 5 of 6 AOD516/AOI516/AOY516 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.5.0: July 2013 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6