X60008E-50 ® Data Sheet March 14, 2005 Precision 5.0V FGA™ Voltage Reference FEATURES • Output Voltage: 5.000V • Absolute Initial Accuracy = ±5mV • Ultra Low Power Supply Current: 500nA • Low Temperature Coefficient = 20ppm/°C max • 10 mA Source & Sink Current Capability • 10 ppm/1000hrs Long Term Stability • Very Low Dropout Voltage: 100 mV @ no load • Supply Voltage Range: 5.1V to 9.0V • 5kV ESD (Human Body Model) • Standard Package: SOIC-8 • Temp Range: -40°C to +85°C FN8145.0 DESCRIPTION The X60008-50 FGA™ voltage references are very high precision analog voltage references fabricated in Intersil’s proprietary Floating Gate Analog technology, which achieves superior levels of performance when compared to conventional band gap, buried zener, or XFET™ technologies. FGA™ voltage references feature very high initial accuracy, very low temperature coefficient, excellent long term stability, low noise and excellent line and load regulation, at the lowest power consumption currently available. These voltage references enable advanced applications for precision industrial & portable systems operating at significantly higher accuracy and lower power levels than can be achieved with conventional technologies. APPLICATIONS • High Resolution A/Ds & D/As • Precision Current Sources • Smart sensors • Digital Meters • Precision Regulators • Strain Gage Bridges • Calibration Systems • Precision Oscillators • Threshold Detectors • V-F Converters • Battery Management Systems • Servo Systems TYPICAL APPLICATION VIN = +6.5V 0.1µF 10µF VIN VOUT X60008-50 0.001µF(*) GND REF IN Serial Bus Enable SCK SDAT 16 to 24-bit A/D Converter (*)Also 1 see Figure 3 in Applications Information CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-352-6832 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 2005. All Rights Reserved All other trademarks mentioned are the property of their respective owners. X60008E-50 PACKAGE DIAGRAM X60008-XX SOIC GND 1 8 DNC VIN 2 7 DNC DNC 3 6 VOUT GND 4 5 DNC PIN CONFIGURATIONS Pin Name GND VIN Description Ground Connection Power Supply Input Connection VOUT Voltage Reference Output Connection DNC Do Not Connect; Internal Connection – Must Be Left Floating ORDERING INFORMATION X 60008 E I S8 – 50 Logo 2 Device Part Number 60008 = Standard Grade E = ±5.0mV, 20 ppm/°C Temperature Range I = -40°C to +85°C Package S8 = 8 lead SOIC VOUT Option 50 = 5.000V FN8145.0 March 14, 2005 X60008E-50 ABSOLUTE MAXIMUM RATINGS COMMENT Storage Temperature Range............ -65°C to + 125°C Voltage on any Pin Referenced to Gnd.............................-0.5V to + 10V Voltage on “DNC” pins.........No connections permitted to these pins. Lead Temperature (soldering, 10 secs).......... + 225°C Absolute Maximum Ratings indicate limits beyond which permanent damage to the device and impaired reliability may occur. These are stress ratings provided for information only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification are not implied. RECOMMENDED OPERATING CONDITIONS Temperature Min. Max. Industrial -40°C +85°C For guaranteed specifications and test conditions, see Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. ELECTRICAL CHARACTERISTICS (Operating Conditions: VIN = 6.5V, IOUT = 0mA, COUT = 0.001µF, TA = -40 to +85°C unless otherwise specified.) Symbol Parameter VOUT Output Voltage VOA VOUT Accuracy X60008EIS8-50 Conditions Min Typ Max 5.000 Units V TA = 25°C mV -5.0 +5.0 IIN Supply Current VIN Input Voltage Range TC VOUT Output Voltage Temperature Coefficient(1) X60008EIS8-50 ∆VOUT/∆VIN Line Regulation +5.5V ≤ VIN ≤ +8.0V ∆VOUT/∆IOUT Load Regulation 0mA ≤ ISOURCE ≤ 10mA -10mA ≤ ISINK ≤ 0mA 15 25 ∆VOUT/∆t Long Term Stability TA = 25°C 10 ∆VOUT/∆TA Thermal Hysteresis(2) ∆T = -40°C to +85°C 50 VDO Dropout Voltage(3) IOUT = 5mA, ∆VOUT = 0.01% 150 300 mV ISC Short Circuit Current(4) TA = 25°C 50 80 mA VN Output Voltage Noise 0.1Hz to 10Hz 30 Note: 500 5.1 10 800 nA 9.0 V 20 ppm/°C 150 µV/V 50 100 µV/mA ppm/ 1000Hrs ppm µVpp 1. Over the specified temperature range. Temperature coefficient is measured by the box method whereby the change in VOUT is divided by the temperature range; in this case, -40°C to +85°C = 125°C. 2. Thermal Hysteresis is the change in VOUT created by package stress @ TA = 25°C after temperature cycling. VOUT is read initially at TA = 25°C; the X60008 is then cycled between Hot (85°C) and Cold (-40°C) before a second VOUT measurement is taken at 25°C. The deviation between the initial VOUT reading and the second VOUT reading is then expressed in ppm. 3. Dropout voltage (VDO) is the minimum voltage (VIN) into the X60008 which will produce the output voltage (∆VOUT) drop specified in the Electrical Characteristics table. 4. Guaranteed by Device Characterization 3 FN8145.0 March 14, 2005 X60008E-50 TYPICAL PERFORMANCE CHARACTERISTIC CURVES (VIN = 6.5V, IOUT = 0mA, TA = 25°C unless otherwise specified) LINE REGULATION LINE REGULATION VOUT (V) (normalized to 5V at VIN = 6.5V) 300 -40°C 250 25°C 200 150 100 85°C 50 0 5 6 7 8 9 5 Typical Units 5.0003 5.0002 5.0001 5.0000 4.9999 4.9998 4.9997 5 6 Vin (V) 7 8 9 Vin (V) LOAD REGULATION 0.6 0.5 Delta VOUT (mV) -50 5.0004 -40°C 0.4 0.3 25°C 85°C 0.2 0.1 0 -0.1 -0.2 -0.3 -20 -15 -10 -5 0 SINKING 5 10 15 20 SOURCING OUTPUT CURRENT (mA) 0.1Hz to 10Hz VOUT NOISE Band Pass Filter with 1 zero at .1Hz and 2 poles at 10 Hz 5µV/div Delta Vo (µV) (normalized to VIN = 6.5V) 350 10 Sec/div 4 FN8145.0 March 14, 2005 X60008E-50 TYPICAL PERFORMANCE CHARACTERISTIC CURVES (VIN = 6.5V, IOUT = 0mA, TA = 25°C unless otherwise specified) VOUT vs TEMPERATURE PSRR vs CAP LOAD Normalized to 25°C 5.0020 0 5.0010 -20 PSRR (dB) -10 5.0005 5.0000 4.9995 CL=.001µF CL=.01µF -40 -50 CL=.1µF -60 4.9985 -70 4.9980 CL=0 -30 4.9990 -40C -15C 10C +35C +60C +85C -80 1 Hz 10 Hz 100Hz 1kHz 10kHz 100kHz 1 MHz FREQUENCY (Hz) TEMPERATURE (C) 10mA LOAD TRANSIENT RESPONSE 10mA LOAD TRANSIENT RESPONSE CL = .01µF ∆IIN = -10mA ∆IIN = +10mA 200mV/DIV CL = .001µF ∆IIN = -10mA ∆IIN = +10mA 500µSEC/DIV 500µSEC/DIV 10mA LOAD TRANSIENT RESPONSE CL = .1µF 200mV/DIV 200mV/DIV VOUT (V) 4 Typical Units 5.0015 ∆IIN = -10mA ∆IIN = +10mA 500µSEC/DIV 5 FN8145.0 March 14, 2005 X60008E-50 TYPICAL PERFORMANCE CHARACTERISTIC CURVES (VIN = 6.5V, IOUT = 0mA, TA = 25°C unless otherwise specified) 50µA LOAD TRANSIENT RESPONSE 50µA LOAD TRANSIENT RESPONSE 50mV/DIV CL = .01µF ∆IIN = -50µA ∆IIN = +50µA ∆IIN = -50µA 100µSEC/DIV ∆IIN = +50µA 200µSEC/DIV 50µA LOAD TRANSIENT RESPONSE CL = .1µF ∆IIN = -50µA 20mV/DIV 50mV/DIV CL = .001µF ∆IIN = +50µA 1mSEC/DIV 6 FN8145.0 March 14, 2005 X60008E-50 TYPICAL PERFORMANCE CHARACTERISTIC CURVES (VIN = 6.5V, IOUT = 0mA, TA = 25°C unless otherwise specified) LINE TRANSIENT RESPONSE LINE TRANSIENT RESPONSE 200mV/DIV CL = .001µF 200mV/DIV CL = 0 ∆VIN = -500mV ∆VIN = +500mV ∆VIN = -500mV 500µSEC/DIV 500µSEC/DIV LINE TRANSIENT RESPONSE LINE TRANSIENT RESPONSE CL = .1µF 200mV/DIV 200mV/DIV CL = .01µF ∆VIN = -500mV ∆VIN = -500mV ∆VIN = +500mV ∆VIN = +500mV 500µSEC/DIV 500µSEC/DIV MINIMUM VIN to VOUT DIFFERENTIAL vs. OUTPUT CURRENT Zout vs FREQUENCY 0.50 500.0 0.45 CL=.001µF +85C 0.40 400.0 0.35 +25C 0.30 0.25 -40C 0.20 0.15 Zout (Ohms) VIN to VOUT Differential (V) ∆VIN = +500mV CL=.01µF 300.0 200.0 CL=.1µF 0.10 100.0 0.05 0 0 -2 -4 -6 -8 OUTPUT CURRENT (mA) 7 -10 0.0 1 10 100 1K 10K 100K FREQUENCY (Hz) FN8145.0 March 14, 2005 X60008E-50 TYPICAL PERFORMANCE CHARACTERISTIC CURVES (VIN = 6.5V, IOUT = 0mA, TA = 25°C unless otherwise specified) IIN vs VIN IIN vs VIN 900 700 800 -40°C 600 +25°C 500 +85°C 700 IIN (nA) 500 400 400 300 300 200 5 units representative of IIN range 200 100 100 0 5.5 6 6.5 7 7.5 8 8.5 0 9 5.5 6 6.5 VIN (V) 7 7.5 8 8.5 9 VIN (V) TURN-ON TIME 7 VIN 6 VIN & VOUT (V) IIN (nA) 600 5 4 VOUT 3 2 1 0 0 2 4 6 8 10 TIME (mSec) 8 FN8145.0 March 14, 2005 X60008E-50 APPLICATIONS INFORMATION FGA Technology The X60008 series of voltage references use the floating gate technology to create references with very low drift and supply current. Essentially the charge stored on a floating gate cell is set precisely in manufacturing. The reference voltage output itself is a buffered version of the floating gate voltage. The resulting reference device has excellent characteristics which are unique in the industry: very low temperature drift, high initial accuracy, and almost zero supply current. Also, the reference voltage itself is not limited by voltage bandgaps or zener settings, so a wide range of reference voltages can be programmed (standard voltage settings are provided, but customer-specific voltages are available). The process used for these reference devices is a floating gate CMOS process, and the amplifier circuitry uses CMOS transistors for amplifier and output transistor circuitry. While providing excellent accuracy, there are limitations in output noise level and load regulation due to the MOS device characteristics. These limitations are addressed with circuit techniques discussed in other sections. Nanopower Operation Reference devices achieve their highest accuracy when powered up continuously, and after initial stabilization has taken place. For example, power-up drift on a high accuracy reference can reach 20ppm or more in the first 30 seconds, and generally will settle to a stable value in 100 hours or so. This drift can be eliminated by leaving the power-on continuously. The X60008 is the first high precision voltage reference with ultra low power consumption that makes it possible to leave power-on continuously in battery operated circuits. The X60008 consumes extremely low supply current due to the proprietary FGA technology. Supply current at room temperature is typically 500nA which is 1 to 2 orders of magnitude lower than competitive devices. Application circuits using battery power will benefit greatly from having an accurate, stable reference which essentially presents no load to the battery. In particular, battery powered data converter circuits that would normally require the entire circuit to be disabled when not in use can remain powered up between conversions as shown in figure 1. Data acquisition circuits providing 12 to 24 bits of accuracy can operate with the reference device continuously biased with no power penalty, providing the highest accuracy and lowest possible long term drift. 9 Other reference devices consuming higher supply currents will need to be disabled in between conversions to conserve battery capacity. Absolute accuracy will suffer as the device is biased and requires time to settle to its final value, or, may not actually settle to a final value as power-on time may be short. Figure 1. VIN = +6-9V 10µF 0.01µF VIN VOUT X60008-50 GND 0.001µF-0.01µF REF IN Serial Bus Enable SCK SDAT 12 to 24-bit A/D Converter Board mounting Considerations For applications requiring the highest accuracy, board mounting location should be reviewed. Placing the device in areas subject to slight twisting can cause degradation of the accuracy of the reference voltage due to die stresses. It is normally best to place the device near the edge of a board, or the shortest side, as the axis of bending is most limited at that location. Obviously mounting the device on flexprint or extremely thin PC material will likewise cause loss of reference accuracy. Noise Performance and Reduction: The output noise voltage in a 0.1Hz to 10Hz bandwidth is typically 30µVp-p. This is shown in the plot in the Typical Performance Curves. The noise measurement is made with a bandpass filter made of a 1 pole highpass filter with a corner frequency at .1Hz and a 2-pole low-pass filter with a corner frequency at 12.6Hz to create a filter with a 9.9Hz bandwidth. Noise in the 10KHz to 1MHz bandwidth is approximately 400µVp-p with no capacitance on the output, as shown in Fig. 2 below. These noise measurements are made with a 2 decade bandpass filter made of a 1 pole high-pass filter with a corner frequency at 1/10 of the center frequency and 1-pole low-pass filter with a corner frequency at 10 times the center frequency. Figure 2 also shows the noise in the 10KHz to 1MHz band can be reduced to about 50µVp-p using a .001µF capacitor on the output. Noise in the 1KHz to 100KHz band can be further reduced using a 0.1µF capacitor on the output, but FN8145.0 March 14, 2005 X60008E-50 Figure 2. X60008-50 NOISE REDUCTION NOISE VOLTAGE (µVp-p) 6 5 IIN = 730nA 4 IIN = 500nA 3 IIN = 320nA 2 0 -1 CL = 0 CL = .001µF 1 3 5 7 9 11 13 15 TIME (mSec) CL = .1µF 300 X60008-50 TURN-ON TIME (25°C) 7 1 400 350 Figure 4. VIN & VOUT (V) noise in the 1Hz to 100Hz band increases due to instability of the very low power amplifier with a 0.1µF capacitance load. For load capacitances above .001µF the noise reduction network shown in fig. 3 is recommended. This network reduces noise significantly over the full bandwidth. As shown in fig. 2, noise is reduced to less than 40µVp-p from 1Hz to 1MHz using this network with a .01µF capacitor and a 2kΩ resistor in series with a 10µF capacitor. CL = .01µF & 10µF + 2kΩ 250 Temperature Coefficient 200 The limits stated for temperature coefficient (tempco) are governed by the method of measurement. The overwhelming standard for specifying the temperature drift of a reference is to measure the reference voltage at two temperatures, take the total variation, (VHIGH VLOW), and divide by the temperature extremes of measurement (THIGH - TLOW). The result is divided by the nominal reference voltage (at T = 25°C) and multiplied by 106 to yield ppm/°C. This is the “Box” method for temperature coefficient which allows comparison of devices but can mislead a designer concerned about specific ranges of temperature (i.e., 35°C to 65°C for a power supply design). The designer may infer the tempco to be a well-behaved flat line slope, similar to that shown in Figure 5. The slope of the Vout vs. temperature curve at points in-between the extremes can actually be much higher than the tempco stated in the specifications due to multiple inflections in the temperature drift curve. Most notably, bandgap devices may have some type of “s-curve” which will have slopes that exceed the average specified tempco by 2x or 3x. 150 100 50 0 1 10 100 1000 10000 100000 Figure 3. VIN = 6.5V 10µF .1µF VIN VO X60008-50 GND 2kΩ .01µF 10µF Turn-On Time The X60008 devices have ultra-low supply current and thus the time to bias up internal circuitry to final values will be longer than with higher power references. Normal turn-on time is typically 7ms. This is shown in the graph, Figure 4. Since devices can vary in supply current down to 300nA, turn-on time can last up to about 12ms. Care should be taken in system design to include this delay before measurements or conversions are started. 10 FN8145.0 March 14, 2005 X60008E-50 Figure 5. Flat Line Slope Tempco Curves (Vout = 5V) Temp-Co (Normalized to +25°C) Change in VOUT (mV) 10.0 20ppm/°C 5.0 0.0 The tempco curve for the X60008 devices is generally flat (within 0.5ppm/°C typically) over the industrial temperature range (-40 to 85°C) with some inflection at the extreme temperatures. The combination of very low tempco performance a predictable tempco slope is unique to the X60008 due to its floating gate technology. This behavior is much easier to consider when designing data conversion systems or control systems that must operate over a range of temperatures. -5.0 20ppm/°C -10.0 -40°C 25°C Temperature 11 85°C FN8145.0 March 14, 2005 X60008E-50 TYPICAL APPLICATION CIRCUITS Precision 5V, 50mA Reference. VIN = 6V-9V R = 200Ω 2N2905 VIN X60008-50 VOUT 5.0V/50mA 0.009µF GND ±5.0V Dual Output, High Accuracy Reference +5.3-9.0V 0.1µF VIN X60008-50 VOUT 5.0V 0.001µF GND VIN X60008-50 VOUT R1 = 5.0V - VIN ; IOUT ≤ 10mA IOUT 0.001µF GND R1 -VIN = -5.5V to -9.0V -5.0V Kelvin Sensed Load +5.3-9.0V 0.1µF VIN VOUT X60008-50 GND 12 + VOUT Sense – Load FN8145.0 March 14, 2005 X60008E-50 TYPICAL APPLICATION CIRCUITS Negative Voltage Reference X60008-50 R VIN VOUT GND CIN 0.001 COUT = 0.001µF -5.0V R1 = 200 R1 Limits max load current with RI = 200Ω; ILOAD MAX = 4mA -9V 5V Full Scale Low-Drift 10-bit Adjustable Voltage Source 5.3-9.0V 0.1µF VIN VOUT X60008-50 GND 0.01µF VCC RH X9119 2-Wire Bus 13 + SDA SCL VSS VOUT – VOUT (buffered) RL FN8145.0 March 14, 2005 X60008E-50 PACKAGING INFORMATION 8-Lead Plastic, SOIC, Package Code S8 0.150 (3.80) 0.158 (4.00) 0.228 (5.80) 0.244 (6.20) Pin 1 Index Pin 1 0.014 (0.35) 0.019 (0.49) 0.188 (4.78) 0.197 (5.00) (4X) 7° 0.053 (1.35) 0.069 (1.75) 0.004 (0.19) 0.010 (0.25) 0.050 (1.27) 0.010 (0.25) X 45° 0.020 (0.50) 0.050" Typical 0.050" Typical 0° - 8° 0.0075 (0.19) 0.010 (0.25) 0.250" 0.016 (0.410) 0.037 (0.937) FOOTPRINT 0.030" Typical 8 Places NOTE: ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS) All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 14 FN8145.0 March 14, 2005