WFP630 on N-Chann el MOS FET Silic ilico nne OSF Features ■ 9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 22nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) rip General Desc scrip ripttion This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well G D suited for low voltage applications such as automotive, high TO220 S efficiency switching for DC/DC converters, and DC motor control. ngs Absolute Max axiimum Rati tin Symbol VDSS ID Parameter Value Units 200 V Continuous Drain Current(@Tc=25℃) 9 A Continuous Drain Current(@Tc=100℃) 5.7 A 36 A Drain Source Voltage IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 160 mJ EAR Repetitive Avalanche Energy (Note 1) 7.2 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns 72 W 0.57 W/℃ -55~150 ℃ 300 ℃ Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ, Tstg Junction and Storage Temperature TL Maximum lead Temperature for soldering purposes al Ch arac stics Therm rmal Cha actteri ris Symbol Parameter Min Value Typ Max Units RQJC Thermal Resistance, Junction-to-Case - - 1.74 ℃/W RQCS Thermal Resistance, Case to Sink - 0.5 - ℃/W RQJA Thermal Resistance, Junction-to-Ambient - - 62.5 ℃/W Rev.A Jun.2010 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. WFP630 arac Elec ecttrical Ch Cha actteristics (Tc = 25 25°°C) Characteristics Gate leakage current Symbol Test Condition Min Type Max Unit IGSS VGS = ±30 V, VDS = 0 V - - ±100 nA V(BR)GSS IG = ±10 μA, VDS = 0 V ±30 - - V IDSS VDS = 200 V, VGS = 0 V - - 10 μA Drain−source breakdown voltage V(BR)DSS ID = 250 μA, VGS = 0 V 200 - - V Break Voltage Temperature Coefficient ΔBVDSS/ ID=250μA, Referenced to 25℃ - 0.2 - V/℃ Gate−source breakdown voltage Drain cut−off current ΔTJ Gate threshold voltage VGS(th) VDS = 10 V, ID =250 μA 2 - 4 V Drain−source ON resistance RDS(ON) VGS = 10 V, ID = 4.5A - - 0.4 Ω Forward Transconductance gfs VDS = 50 V, ID = 4.5A - 7.05 - S Input capacitance Ciss VDS = 25 V, - 500 720 Reverse transfer capacitance Crss VGS = 0 V, - 22 29 Output capacitance Coss f = 1 MHz - 85 110 Rise time tr VDD =100 V, - 11 30 Turn−on time ton - 70 150 Fall time tf - 60 130 Turn−off time toff - 65 140 - 22 29 - 3.6 - - 10 - Switching time Total gate charge (gate−source plus gate−drain) Qg ID = 9 A RG=12 Ω (Note4,5) VDD = 160 V, pF ns VGS = 10 V, Gate−source charge Qgs Gate−drain (“miller”) Charge Qgd ID = 9 A (Note4,5) nC s and Ch arac Sou Sourrce−Drain Rating ings Cha actteristics (Ta = 25 25°°C) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 9 A Pulse drain reverse current IDRP - - - 36 A Forward voltage (diode) VDSF IDR = 9 A, VGS = 0 V - 1.4 1.5 V Reverse recovery time trr IDR = 9A, VGS = 0 V, - 140 - ns Reverse recovery charge Qrr dIDR / dt = 100 A / μs - 1.1 2.2 μC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=500uH,IAS=9 A,VDD=50V,RG=0Ω,Starting TJ=25℃ 3.ISD≤9A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2% 5.Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/7 Steady, keep you advance WFP630 Fig. 1 On-State Characteristics Fig.3 On-Resistance Variation vs Drain Current Fig.5 On-Resistance Variation vs Junction Temperature Fig.2 Transfer Characteristics Fig.4 Body Diode Forward Voltage Variation vs. Source Current and Temperature Fig.6 Gate Charge Characteristics 3/7 Steady, keep you advance WFP630 Fig.8 Capacitance Characteristics Fig.9 Breakdown Voltage Variation vs. Temperature Fig.9 Maximum Safe Operation Area Fig.10 Maximum Drain Current vs Case Temperature Fig.11 Transient Thermal Response Curve 4/7 Steady, keep you advance WFP630 Fig.10 Gate Test Circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Unclamped Inductive Switching Test Circuit & Waveform 5/7 Steady, keep you advance WFP630 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, keep you advance WFP630 20 Pa cka ge Dim ension TO-2 -22 Pac kage Dime Unit: mm 7/7 Steady, keep you advance