Datasheet

AOH3106
100V N-Channel MOSFET
General Description
Product Summary
The AOH3106 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
VDS
100V
2A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 360mΩ
RDS(ON) (at VGS=4.5V)
< 385mΩ
SOT223
Top View
D
Bottom View
D
D
G
S
G
D
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current G
VGS
TA=25°C
Units
V
±20
V
2
ID
TA=70°C
Maximum
100
A
1.5
Pulsed Drain Current C
IDM
Avalanche Current C
IAS
5
A
Avalanche energy L=100uH C
TA=25°C
EAS
1.3
mJ
Power Dissipation B
Junction and Storage Temperature Range
Rev 0: Nov 2012
3.1
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
7
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
W
2
RθJA
RθJL
-55 to 150
Typ
33
60
30
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°C
Max
40
75
40
Units
°C/W
°C/W
°C/W
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AOH3106
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=250µA, VGS=0V
100
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS，ID=250µA
ID(ON)
On state drain current
VGS=10V, VDS=5V
1
TJ=55°C
1.0
±100
nA
1.5
2.0
V
295.5
360
548
665
306.5
385
mΩ
1
V
2
A
7
TJ=125°C
VGS=4.5V, ID=1.5A
A
gFS
Forward Transconductance
VDS=5V, ID=2A
4.5
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.78
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=50V, f=1MHz
185
pF
19
pF
pF
Ω
1.2
1.8
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
4.8
10
nC
Qg(4.5V) Total Gate Charge
2.5
6
nC
VGS=10V, VDS=50V, ID=2A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=2A, dI/dt=100A/µs
VGS=10V, VDS=50V, RL=25Ω,
RGEN=3Ω
IF=2A, dI/dt=100A/µs
0.6
mΩ
S
8
VGS=0V, VDS=0V, f=1MHz
Units
µA
5
VGS=10V, ID=2A
Static Drain-Source On-Resistance
Max
V
VDS=100V, VGS=0V
IDSS
RDS(ON)
Typ
0.5
nC
1.4
nC
3.5
ns
2.8
ns
16
ns
2.5
ns
17
ns
nC
14.5
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating
G. The maximum current rating is package limited.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Nov 2012
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Page 2 of 5
AOH3106
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
7
4
10V
6
5V
3
5
3.5V
4
ID(A)
ID (A)
VDS=5V
4V
3.0V
3
2
125°C
2
25°C
1
1
VGS=2.5V
0
0
0
1
2
3
4
0
5
400
2
3
4
5
Normalized On-Resistance
2.2
350
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
300
VGS=10V
250
2
VGS=10V
ID=2A
1.8
17
5
2
VGS=4.5V
10
1.6
1.4
1.2
ID=1.5A
1
0.8
200
0
0.5
1
1.5
2
2.5
0
3
25
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
50
75
100
125
150
175
Temperature (°C) 0
Figure 4: On-Resistance vs. Junction
18 Temperature
(Note E)
700
1.0E+01
ID=2A
600
1.0E+00
40
125°C
125°C
1.0E-01
400
IS (A)
RDS(ON) (mΩ
Ω)
500
1.0E-02
300
1.0E-03
25°C
200
25°C
1.0E-04
100
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Nov 2012
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AOH3106
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
350
VDS=50V
ID=2A
300
250
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
200
150
100
Coss
2
Crss
50
0
0
0
1
2
3
4
5
0
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
30
40
50
60
70
80
90
100
VDS (Volts)
Figure 8: Capacitance Characteristics
10000
10.0
TA=25°C
10µs
100µs
RDS(ON)
limited
ID (Amps)
1000
1ms
10ms
0.1
TJ(Max)=150°C
TA=25°C
0.0
0.01
0.1
1
Power (W)
1.0
10
10s
DC
10
100
100
1
1E-05
0.001
0.1
10
1000
1000
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1
PD
0.01
Single Pulse
0.001
1E-05
0.0001
0.001
Ton
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Nov 2012
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Page 4 of 5
AOH3106
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s
RL
V ds
Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
D iode R ecovery T est C ircuit & W aveform s
Q rr = -
V ds +
Idt
DUT
V gs
V ds -
Isd
V gs
Ig
Rev 0: Nov 2012
L
Isd
+
VD C
-
IF
t rr
dI/dt
I RM
V dd
V dd
V ds
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Page 5 of 5