Datasheet

AON4421
P-Channel Enhancement Mode
Field Effect Transistor
General Description
Product Summary
The AON4421 uses advanced trench technology to
provide excellent RDS(ON) with low gate charge. This
device is suitable for use as a load switch.
VDS
-30V
ID (at VGS=-10V)
-8A
RDS(ON) (at VGS=-10V)
< 26mΩ
RDS(ON) (at VGS=-4.5V)
< 34mΩ
ESD Protected
-RoHS Compliant
-Halogen Free
D
DFN 3x2
Top View
Bottom View
Pin 1
D
1
8
D
2
7
D
3
6
G
4
5
D
D
D
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TA=25°C
Pulsed Drain Current C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev.1.0: Sepetember 2014
Steady-State
Steady-State
A
2.5
W
1.6
TJ, TSTG
Symbol
t ≤ 10s
V
-60
PD
TA=70°C
±20
-6
IDM
TA=25°C
Power Dissipation B
Units
V
-8
ID
TA=70°C
Maximum
-30
RθJA
RθJL
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-55 to 150
Typ
42
74
25
°C
Max
50
90
30
Units
°C/W
°C/W
°C/W
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AON4421
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30
-1
TJ=55°C
-5
±10
µA
V
21
26
28
34
VGS=-4.5V, ID=-7A
27
34
22
VDS=VGS ID=-250µA
-0.8
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-60
VGS=-10V, ID=-8A
Static Drain-Source On-Resistance
TJ=125°C
gFS
Forward Transconductance
VDS=-5V, ID=-8A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
-1.8
VDS=0V, VGS= ±20V
Gate Threshold Voltage
Output Capacitance
Units
-1.3
Gate-Body leakage current
VGS(th)
Coss
Max
V
VDS=-30V, VGS=0V
IGSS
RDS(ON)
Typ
A
-0.74
930
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
S
V
-3
A
1120
pF
170
pF
120
pF
8
Ω
17.6
21
Qg(-4.5V) Total Gate Charge
8.6
10
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=-8A, dI/dt=500A/µs
18
Qrr
Body Diode Reverse Recovery Charge IF=-8A, dI/dt=500A/µs
32
VGS=-10V, VDS=-15V, RL=1.9Ω,
RGEN=3Ω
mΩ
-1
SWITCHING PARAMETERS
Qg(-10V) Total Gate Charge
VGS=-10V, VDS=-15V, ID=-8A
mΩ
nC
nC
2
nC
3.4
nC
6
ns
7
ns
40
ns
30
ns
22
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: Sepetember 2014
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Page 2 of 5
AON4421
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
60
-6V
-10V
-4.5V
-4V
20
-ID(A)
-ID (A)
40
-3.5V
30
20
VDS=-5V
25
50
15
10
-3V
25°C
125°C
5
10
VGS=-2.5V
0
0
0
1
2
3
4
0.5
5
35
1.5
2
2.5
3
3.5
4
Normalized On-Resistance
1.5
VGS=-4.5V
30
RDS(ON) (mΩ)
1
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
25
20
VGS=-10V
15
VGS=-10V
ID=-8A
1.4
1.3
17
5
1.2
VGS=-4.5V
2
ID=-7A
1.1
10
1.0
0.9
10
0
4
0
8
12
16
20
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
70
1.0E+02
ID=-8A
1.0E+01
60
40
1.0E+00
-IS (A)
RDS(ON) (mΩ)
50
40
125°C
30
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
20
1.0E-04
25°C
1.0E-05
10
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: Sepetember 2014
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON4421
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1400
VDS=-15V
ID=-8A
1200
Capacitance (pF)
-VGS (Volts)
8
6
4
Ciss
1000
800
600
400
Coss
2
200
0
Crss
0
0
5
10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
0
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
10000
100.0
10µs
RDS(ON)
limited
TA=25°C
1000
1ms
10ms
1.0
Power (W)
-ID (Amps)
10.0
30
100
100ms
0.1
TJ(Max)=150°C
TA=25°C
0.0
0.01
0.1
10
10s
DC
1
10
1
0.00001
100
-VDS (Volts)
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
0.1
PD
0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
Ton
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: Sepetember 2014
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Page 4 of 5
AON4421
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
R esistive Sw itching Test C ircuit & W aveform s
RL
V ds
t o ff
to n
Vgs
-
DUT
Vgs
V DC
td(o n)
t d(o ff)
tr
tf
90%
V dd
+
Rg
V gs
10%
V ds
D iode R e covery Te st C ircuit & W aveform s
Q rr = -
V ds +
Idt
DUT
V gs
Vds Isd
V gs
Ig
Rev.1.0: Sepetember 2014
L
-Isd
+ V dd
t rr
dI/dt
-I R M
V dd
VDC
-
-I F
-Vds
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Page 5 of 5