WFF840 on N-C hann el MOS FET Silic Silico N-Ch nnel MOSF Features ■ 8A,500V,RDS(on)(Max 0.8Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 48nC) ■Fast Switching Capability ■ 100%Avalanche Tested ■ Isolation Voltage ( VISO = 4000V AC ) ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planarstripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor G D correction bridge and full bridge resonant topology line a and half TO220F S electronic lamp ballast. Absolute Maximum Ratings Symbol VDSS ID Parameter Value Units 500 V Continuous Drain Current(@Tc=25℃) 8* A Continuous Drain Current(@Tc=100℃) 5.1* A 32* A ±30 V Drain Source Voltage IDM Drain Current Pulsed VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) 320 mJ EAR Repetitive Avalanche Energy (Note 1) 13.4 mJ Peak Diode Recovery dv/dt (Note 3) 3.5 V/ns 44 W 0.35 W/℃ -55~150 ℃ 300 ℃ dv/dt (Note1) Total Power Dissipation(@Tc=25℃) PD TJ, Tstg TL Derating Factor above 25℃ Junction and Storage Temperature Maximum lead Temperature for soldering purposes *Drain current limited by junction temperature Thermal Characteristics Symbol Parameter Value Units Min Typ Max 2.84 ℃/W RQJC Thermal Resistance, Junction-to-Case - - RQCS Thermal Resistance, Case to Sink - 0.5 - ℃/W RQJA Thermal Resistance, Junction-to-Ambient - - 62 ℃/W Rev. C Nov.2008 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. T03-1 WFF840 Electrical Characte Characterristics (Tc = 25 25°°C) Characteristics Gate leakage current Symbol Test Condition Min Type Max Unit IGSS VGS = ±30 V, VDS = 0 V - - ±100 nA V(BR)GSS IG = ±10 μA, VDS = 0 V ±30 - - V IDSS VDS = 400 V, VGS = 0 V - - 10 μA Drain−source breakdown voltage V(BR)DSS ID = 250 μA, VGS = 0 V 500 - - V Break Voltage Temperature Coefficient ΔBVDSS / ID=250μA, Referenced to 25℃ - 0.5 - V/℃ Gate−source breakdown voltage Drain cut−off current ΔTJ Gate threshold voltage VGS(th) VDS = 10 V, ID =250 μA 2 - 4 V Drain−source ON resistance RDS(ON) VGS = 10 V, ID =4.0A - 0.65 0.80 Ω Forward Transconductance gfs VDS = 40 V, ID =4.0A - 7.3 - S Input capacitance Ciss VDS = 25 V, - 1400 1800 Reverse transfer capacitance Crss VGS = 0 V, - 34 44 Output capacitance Coss f = 1 MHz - 145 190 tr VDD =250 V, - 22 55 ID =8 A - 65 140 tf RG=9.1 Ω - 125 260 toff RD=31 Ω - 75 160 Qg VDD = 400 V, - 59 70 - 7 9 - 28 32 Rise time Switching Turn−on time time Fall time ton pF ns Turn−off time (Note4,5) Total gate charge (gate−source plus gate−drain) VGS = 10 V, Gate−source charge Qgs Gate−drain (“miller”) Charge Qgd nC ID =8 A (Note4,5) −Drain Ratings and Characte Source Source− Characterristics (Ta = 25°C) Characteristics Symbol Test Condition Min Ty pe Max Unit Continuous drain reverse current IDR - - - 8 A Pulse drain reverse current IDRP - - - 32 A Forward voltage (diode) VDSF IDR = 8 A, VGS = 0 V - - 1.4 V Reverse recovery time trr IDR = 8A, VGS = 0 V, - 390 - ns Reverse recovery charge Qrr dIDR / dt = 100 A / μs - 4.2 - μC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=9mH,IAS=8A,VDD=50V,RG=25Ω,Starting TJ=25℃ 3.ISD≤8A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2% 5.Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/7 . Steady, keep you advance WFF840 Fig. 1 On-State Characteristics Fig.2 Transfer Characteristics Fig.3 Capacitance Variation vs Drain Voltage Fig.4 Maximum Avalanche Energy vs On-State Current Fig.5 On-Resistance Variation vs Junction Temperature Fig.6 Gate Charge Characteristics 3/7 . Steady, keep you advance WFF840 Fig.7 Maximum Safe Operation Area Fig.8 Maximum Drain Current vs Case Temperature Fig.9 Transient Thermal Response Curve 4/7 . Steady, keep you advance WFF840 Fig.10 Gate Test Circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Unclamped Inductive Switching Test Circuit & Waveform 5/7 . Steady, keep you advance WFF840 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 . Steady, keep you advance WFF840 0F Package Dimension TO-22 -220 Unit: mm 7/7 . Steady, keep you advance