K2698 Silicon N-Channel MOSFET Features ■ 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 42nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for AC-DC switching power supplies, DC-DC power Converters high voltage H-bridge motor drive PWM Absolute Maximum Ratings Symbol VDSS Parameter Value Units Drain Source Voltage 500 V Continuous Drain Current(@Tc=25℃) 18 A Continuous Drain Current(@Tc=100℃) 12.7 A 80 A ±30 V ID IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note2) 330 mJ EAR Repetitive Avalanche Energy (Note1) 27.7 mJ dv/dt Peak Diode Recovery dv /dt (Note3) 4.5 V/ ns PD Total Power Dissipation(@Tc=25℃) 208 W TJ,Tstg Junction and Storage Temperature -55~150 ℃ 300 ℃ TL Channel Temperature Thermal Characteristics Symbol Parameter Value Min Typ Max Units RQJC Thermal Resistance , Junction -to -Case - - 0.60 ℃/W RQJA Thermal Resistance , Junction-to -Ambient - - 40 ℃/W Rev.A Aug.2010 Copyright@Winsemi Microelectronics Co., Ltd., All right reserved. K2698 Electrical Characteristics(Tc=25℃) Characteristics Symbol Gate leakage current Test Condition Min Type Max Unit IGSS VGS=±25V,V DS=0V - - ±10 nA V(BR)GSS IG=±10 µA,VDS=0V ±30 - - V IDSS VDS=500V,V GS=0V - - 100 µA Drain -source breakdown voltage V(BR)DSS ID=10 mA,VGS=0V 500 - - V Breakdown voltage Temperature △BVDSS/ - 0.5 - V/℃ Gate-source breakdown voltage Drain cut -off current △TJ coefficient ID=250µA,Referenced to 25℃ Gate threshold voltage VGS(th) VDS=10V,ID=1mA 3 - 5 V Drain -source ON resistance RDS(ON) VGS=10V,ID=9A - 0.23 0.27 Ω Forward Transconductance gfs VDS=40V,ID=9A - 16 - S Input capacitance Ciss VDS=25V, - 2530 3290 Reverse transfer capacitance Crss VGS=0V, - 11 14.3 Output capacitance Coss f=1MHz - 300 390 VDD=250V, - 40 90 ton ID=18A - 150 310 tf RG=25Ω - 95 200 - 110 230 - 42 55 - 12 - - 14 - Min Type Max Unit Rise time tr Turn-on time Switching time Fall time Turn-off time ns (Note4,5) toff Total gate charge(gate-source pF VDD=400V, Qg plus gate-drain) VGS=10V, nC Gate-source charge Qgs Gate-drain("miller") Charge Qgd ID=18A (Note4,5) Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Continuous drain reverse current IDR - - - 18 A Pulse drain reverse current IDRP - - - 72 A Forward voltage(diode) VDSF IDR=18A,VGS=0V - - 1.4 V Reverse recovery time trr IDR=18A,VGS=0V, - 500 - ns Reverse recovery charge Qrr dIDR / dt =100 A / µs - 5.4 - µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=5.2mH IAS=18A,VDD=50V,R G=25Ω,Starting TJ=25℃ 3.ISD≤18A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2% 5. Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/7 Steady, keep you advance K2698 Fig.1 On State Characteristics Fig.3 On-Resistance Variation vs Drain Current Fig.5 Capacitance Characteristics Fig.2 Transfer Current Characteristics Fig.4 Body Diode Forward Voltage Variation with Source Current and Temperature Fig.6 Gate Charge Characteristics 3/7 Steady, keep you advance K2698 Fig.7 Breakdown Voltage Variation Fig.9 Maximum Safe Operation Area Fig.8 On-Resistance Variation vs.Temperature Fig.10 Maximum Drain Current vs Case Temperature 11 Transient Thermal Response Curve Fig. Fig.11 4/7 Steady, keep you advance K2698 2 Gate Test Circuit & Waveform Fig.1 Fig.12 3 Resistive Switching Test Circuit & Waveform Fig.1 Fig.13 4 Unclamped Inductive Switching Test Circuit & Waveform Fig.1 Fig.14 5/7 Steady, keep you advance K2698 5 Peak Diode Recovery dv/dt Test Circuit & Waveform Fig.1 Fig.15 6/7 Steady, keep you advance K2698 247 Package Dimension TOTO-247 Unit:mm 7/7 Steady, keep you advance