20N60
WFF
WFF20N60
Silicon N-Channel MOSFET
Features
�
20A,600V,RDS(on) (Max0.39Ω)@VGS =10V
�
Ultra-low Gate charge(Typical 50nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advancedplanar
s tripe,VDMOS technology.this latest technology
has beenespecially
designed to minimize on-state resistance, have a high rugged avalanche
characteristics .This devices is specially w ellsuited for AC-DC switching
power supplies, DC-DC powerConverters high voltage H-bridge motor
drive PWM
Absolute Maximum Ratings
Symbol
Value
Units
Drain Source Voltage
600
V
Continuous Drain Current(@Tc=25℃)
20*
A
Continuous Drain Current(@Tc=100℃)
12.5*
A
20*
A
±30
V
VDSS
Parameter
ID
I DM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
450
mJ
I AR
Avalanche Current
(Note1)
20
A
EAR
Repetitive Avalanche Energy
(Note1)
20.7
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
50
V/ ns
55
W
0.31
W/℃
-55~150
℃
300
℃
Total Power Dissipation(@Tc=25℃)
PD
T J,T stg
-Derate above 25℃
TL
Junction and Storage Temperature
Channel Temperature
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
Min
Value
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
2.27
℃/W
R QJA
Thermal Resistance , Junction -to -Ambient
-
-
62.5
℃/W
Rev.B Jul.2013
Copyr ight@Winsemi Microelectronics Co., Ltd., All right reserved.
20
N60
WFF
WFF20
20N
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Test Condition
Min
Type
Max
Unit
I GSS
VGS =±30V,VDS =0V
-
-
±100
nA
V(BR)GSS
I G=±10 µA,VDS=0V
±30
-
-
V
VDS =600V,V GS =0V
-
-
1
µA
VDS =480V,T J =125℃
-
-
10
µA
600
-
-
V
-
0.5
-
V/℃
Drain cut -off current
I DSS
Drain -source breakdownvoltage
V(BR)DSS
Breakdownvoltage Temperature
△BVDSS/
I D=250µA,VGS =0V
I D=250µA,Referenced to
coefficient
△TJ
25℃
Gate threshold voltage
VGS(th)
VDS =VGS,I D=250µA
3
-
5
V
Drain -source ON resistance
R DS(ON)
VGS =10V,ID=10A
-
0.35
0.39
Ω
Forward Transconductance
gfs
VDS =40V ,I D=10A（Note4）
-
18
-
S
Input capacitance
C iss
VDS =25V,
-
2310
2920
Reverse transfer capacitance
C rss
VGS =0V,
-
85
120
Output capacitance
C oss
f=1MHz
-
1270
1660
VDD=250V
-
130
270
I D=20A
-
60
128
R G=25Ω （Note4,5）
-
70
145
-
220
445
-
50
80
-
15
-
-
23
-
Switching
Turn-on Rise time
tr
Turn-on delay time
td(on)
Turn-on Fall time
time
Turn-off delay time
tf
td(off)
Total gate charge(gate-source
pF
ns
VDS =480V,
Qg
plus gate-drain)
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
VGS =10V,
I D=20A
（Note4,5）
nC
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Continuous drain reverse current
Test Condition
Min
Type
Max
Unit
-
-
20
A
I S =20A,VGS =0V
-
-
1.4
V
I DR
-
Forward voltage(diode)
VDSF
Reverse recovery time
trr
I DR=20A,VGS =0V,
-
460
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
5.1
-
µC
Note 1.Pulse width limited by maximum junction temperature
2.L=5.0mH,IAS =20A,VDD=50V,RG=25Ω,Starting TJ =25℃
3.I SD≤20A,di/dt≤200a/µs,VDD ≤BVDSS, Starting T J=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle ≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/5
Steady, keep you advance
20
N60
WFF
WFF20
20N
Fig.1 On Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance Variation vs
Drain current and Gate Voltage
Fig.4 Body Diode Forward voltage Variation
Fig.5 Capacitance Characteristics
with Source Current And Temperature
Fig.6 Gate Charge Characteristics
3/5
Steady, keep you advance
20
N60
WFF
WFF20
20N
Fig.7 Breakdown Voltage Variation
Fig.8 On-Resistance Variation
vs.Temperature
vs.Temperature
Fig.9 Maximum Safe Operation Area
Fig.10 Maximum Drain Current
vs Case temperature
Fig.11 Transient thermal Response Curve
4/5
Steady, keep you advance
20
N60
WFF
WFF20
20N
220F Package Dimension
TOTO-220F
Unit:mm
5/5
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