AOD2210/AOI2210 200V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Applications ID (at VGS=10V) 200V 18A RDS(ON) (at VGS=10V) < 105mΩ RDS(ON) (at VGS=5V) < 120mΩ 100% UIS Tested 100% Rg Tested • Synchronus Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications TO251A IPAK TO-252 DPAK Top View Top View Bottom View D Bottom View D D D D G S S G G D S S D G G S Orderable Part Number Package Type Form Minimum Order Quantity AOD2210 AOI2210 TO-252 TO-251A Tape & Reel Tube 2500 4000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS VGS Gate-Source Voltage TC=25°C Continuous Drain Current Pulsed Drain Current C TA=25°C Continuous Drain Avalanche Current Avalanche energy L=0.1mH VDS Spike 10µs TC=25°C Power Dissipation B C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: August 2014 IAS 9 A EAS 4 mJ 240 V 100 2.5 Steady-State Steady-State W 1.6 TJ, TSTG Symbol t ≤ 10s W 50 PDSM TA=70°C A 2.5 PD TA=25°C Power Dissipation A A 3.0 VSPIKE TC=100°C V 45 IDSM C ±20 13 IDM TA=70°C Current Units V 18 ID TC=100°C Maximum 200 RθJA RθJC -55 to 175 Typ 15 41 1 www.aosmd.com °C Max 20 50 1.5 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 200 Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1 TJ=55°C 1.5 ±100 nA 2.0 2.5 V 87 105 185 225 120 RDS(ON) Static Drain-Source On-Resistance VGS=5V, ID=16A 93 gFS Forward Transconductance VDS=5V, ID=18A 40 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 VGS=10V, ID=18A Coss Units V VDS=200V, VGS=0V IDSS Max f=1MHz 1 V 18 A pF 74 pF 3.8 pF 2.2 3.3 Ω SWITCHING PARAMETERS Total Gate Charge Qg(10V) 27 40 nC Qg(4.5V) Total Gate Charge 12 20 Qgs Gate Source Charge Qgd tD(on) VGS=10V, VDS=100V, ID=18A 1.1 mΩ S 2065 VGS=0V, VDS=100V, f=1MHz mΩ nC 7 nC Gate Drain Charge 3 nC Turn-On DelayTime 8 ns 10 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=100V, RL=5.5Ω, RGEN=3Ω 30 ns 4 ns IF=18A, dI/dt=500A/µs 60 Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/µs 800 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: August 2014 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 10V VDS=5V 3.5V 4.5V 5V 20 ID(A) ID (A) 20 10 125°C 10 VGS=3V 25°C 0 0 0 1 2 3 4 1 5 2 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 130 Normalized On-Resistance 3.2 110 RDS(ON) (mΩ) 3 VGS=5V 90 70 VGS=10V 2.8 VGS=10V ID=18A 2.4 2 1.6 VGS=5V ID=16A 1.2 0.8 50 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 220 1.0E+02 ID=18A 200 1.0E+01 1.0E+00 125°C 160 IS (A) RDS(ON) (mΩ) 180 140 1.0E-01 125°C 1.0E-02 120 1.0E-03 100 80 25°C 1.0E-04 25°C 60 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: August 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2500 VDS=100V ID=18A 2000 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 1500 1000 2 500 0 Coss Crss 0 0 5 10 15 20 25 30 0 Qg (nC) Figure 7: Gate-Charge Characteristics 20 40 60 100 VDS (Volts) Figure 8: Capacitance Characteristics 500 100.0 TJ(Max)=175°C TC=25°C 10µs 10µs 10.0 400 100µs RDS(ON) limited 1ms 1.0 10ms DC 0.1 Power (W) ID (Amps) 80 0.1 200 100 TJ(Max)=175°C TC=25°C 0.0 0.01 300 1 10 VDS (Volts) 100 0 0.0001 0.001 0.01 1000 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) VGS> or equal to 5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=1.5°C/W 1 0.1 PD Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: August 2014 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS IAR (A) Peak Avalanche Current 100 120 TA=25°C Power Dissipation (W) 100 TA=100°C 10 TA=150°C TA=125°C 80 60 40 20 1 0 1 10 100 0 25 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F) Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C) 50 175 10000 20 TA=25 °C 1000 Power (W) Current rating ID(A) 15 10 100 10 5 0 0 25 50 75 100 125 150 175 1 1E-05 0.1 10 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) TCASE (°C) Figure 14: Current De-rating (Note F) ZθJA Normalized Transient Thermal Resistance 0.001 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: August 2014 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: August 2014 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6