Datasheet

AOD2210/AOI2210
200V N-Channel MOSFET
General Description
Product Summary
VDS
• Trench Power MV MOSFET technology
• Low RDS(ON)
• Low Gate Charge
• Optimized for fast-switching applications
Applications
ID (at VGS=10V)
200V
18A
RDS(ON) (at VGS=10V)
< 105mΩ
RDS(ON) (at VGS=5V)
< 120mΩ
100% UIS Tested
100% Rg Tested
• Synchronus Rectification in DC/DC and AC/DC Converters
• Industrial and Motor Drive applications
TO251A
IPAK
TO-252
DPAK
Top View
Top View
Bottom View
D
Bottom View
D
D
D
D
G
S
S
G
G
D
S
S
D
G
G
S
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOD2210
AOI2210
TO-252
TO-251A
Tape & Reel
Tube
2500
4000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current
Pulsed Drain Current C
TA=25°C
Continuous Drain
Avalanche Current
Avalanche energy
L=0.1mH
VDS Spike
10µs
TC=25°C
Power Dissipation B
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev.1.0: August 2014
IAS
9
A
EAS
4
mJ
240
V
100
2.5
Steady-State
Steady-State
W
1.6
TJ, TSTG
Symbol
t ≤ 10s
W
50
PDSM
TA=70°C
A
2.5
PD
TA=25°C
Power Dissipation A
A
3.0
VSPIKE
TC=100°C
V
45
IDSM
C
±20
13
IDM
TA=70°C
Current
Units
V
18
ID
TC=100°C
Maximum
200
RθJA
RθJC
-55 to 175
Typ
15
41
1
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°C
Max
20
50
1.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
200
Typ
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
1
TJ=55°C
1.5
±100
nA
2.0
2.5
V
87
105
185
225
120
RDS(ON)
Static Drain-Source On-Resistance
VGS=5V, ID=16A
93
gFS
Forward Transconductance
VDS=5V, ID=18A
40
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
VGS=10V, ID=18A
Coss
Units
V
VDS=200V, VGS=0V
IDSS
Max
f=1MHz
1
V
18
A
pF
74
pF
3.8
pF
2.2
3.3
Ω
SWITCHING PARAMETERS
Total Gate Charge
Qg(10V)
27
40
nC
Qg(4.5V)
Total Gate Charge
12
20
Qgs
Gate Source Charge
Qgd
tD(on)
VGS=10V, VDS=100V, ID=18A
1.1
mΩ
S
2065
VGS=0V, VDS=100V, f=1MHz
mΩ
nC
7
nC
Gate Drain Charge
3
nC
Turn-On DelayTime
8
ns
10
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=100V, RL=5.5Ω,
RGEN=3Ω
30
ns
4
ns
IF=18A, dI/dt=500A/µs
60
Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/µs
800
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: August 2014
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Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
30
10V
VDS=5V
3.5V
4.5V
5V
20
ID(A)
ID (A)
20
10
125°C
10
VGS=3V
25°C
0
0
0
1
2
3
4
1
5
2
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
130
Normalized On-Resistance
3.2
110
RDS(ON) (mΩ)
3
VGS=5V
90
70
VGS=10V
2.8
VGS=10V
ID=18A
2.4
2
1.6
VGS=5V
ID=16A
1.2
0.8
50
0
5
10
15
20
25
0
30
25
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
220
1.0E+02
ID=18A
200
1.0E+01
1.0E+00
125°C
160
IS (A)
RDS(ON) (mΩ)
180
140
1.0E-01
125°C
1.0E-02
120
1.0E-03
100
80
25°C
1.0E-04
25°C
60
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: August 2014
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2500
VDS=100V
ID=18A
2000
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
1500
1000
2
500
0
Coss
Crss
0
0
5
10
15
20
25
30
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
40
60
100
VDS (Volts)
Figure 8: Capacitance Characteristics
500
100.0
TJ(Max)=175°C
TC=25°C
10µs
10µs
10.0
400
100µs
RDS(ON)
limited
1ms
1.0
10ms
DC
0.1
Power (W)
ID (Amps)
80
0.1
200
100
TJ(Max)=175°C
TC=25°C
0.0
0.01
300
1
10
VDS (Volts)
100
0
0.0001 0.001 0.01
1000
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
VGS> or equal to 5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=1.5°C/W
1
0.1
PD
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: August 2014
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Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
IAR (A) Peak Avalanche Current
100
120
TA=25°C
Power Dissipation (W)
100
TA=100°C
10
TA=150°C
TA=125°C
80
60
40
20
1
0
1
10
100
0
25
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
50
175
10000
20
TA=25
°C
1000
Power (W)
Current rating ID(A)
15
10
100
10
5
0
0
25
50
75
100
125
150
175
1
1E-05
0.1
10
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
TCASE (°C)
Figure 14: Current De-rating (Note F)
ZθJA Normalized Transient
Thermal Resistance
0.001
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
0.001
0.0001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.1.0: August 2014
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Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: August 2014
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6