Datasheet

AOD4102/AOI4102
30V N-Channel MOSFET
General Description
Product Summary
The AOD4102/AOI4102 uses advanced trench
technology and design to provide excellent RDS(ON) with
low gate charge. This device is suitable for use in PWM,
load switching and general purpose applications.
ID (at VGS=10V)
VDS
30V
19A
RDS(ON) (at VGS=10V)
< 37mΩ
RDS(ON) (at VGS = 4.5V)
< 64mΩ
100% UIS Tested
100% Rg Tested
TO-252
D-PAK
Top View
D
TO251A
IPAK
Bottom View
D
Bottom View
Top View
G
S
G
Gate-Source Voltage
VGS
TC=25°C
Pulsed Drain Current C
Avalanche Current
C
Avalanche energy L=0.3mH
TC=25°C
Power Dissipation B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Rev 0: January 2010
Steady-State
Steady-State
A
12
mJ
W
4.2
RθJA
RθJC
W
2.7
-55 to 175
TJ, TSTG
Symbol
t ≤ 10s
9
10
PDSM
TA=70°C
A
21
PD
TA=25°C
Power Dissipation A
A
8
EAS, EAR
TC=100°C
V
6.5
IAS, IAR
C
±20
30
IDSM
TA=70°C
Units
V
13
IDM
TA=25°C
Continuous Drain
Current
Maximum
30
19
ID
TC=100°C
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain
Current G
D
D
S
G
G
S
Typ
20
50
4.5
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°C
Max
30
60
7
Units
°C/W
°C/W
°C/W
Page 1 of 6
AOD4102/AOI4102
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
ID=250µA, VGS=0V
1
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
30
TJ=55°C
5
10
VGS=10V, ID=12A
Static Drain-Source On-Resistance
TJ=125°C
VGS=10V, ID=12A
TO251A
gFS
Forward Transconductance
VGS=4.5V, ID=7A
TO251A
VDS=5V, ID=10A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
Units
V
VDS=30V, VGS=0V
Zero Gate Voltage Drain Current
T0252
VGS=4.5V, ID=7A
TO252
Max
30
IDSS
RDS(ON)
Typ
DYNAMIC PARAMETERS
Ciss
Input Capacitance
1.8
3
µA
µA
V
A
30
37
46
55
53
64
mΩ
30.5
37.5
mΩ
53.5
64.5
mΩ
1
V
12
A
12
0.77
mΩ
S
288
360
432
pF
31
45
59
pF
18
30
42
pF
0.5
1
1.5
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
5.3
6.6
8
nC
Qg(4.5V) Total Gate Charge
2.5
3.2
4
nC
1.2
1.5
1.8
nC
1.3
2.2
3.1
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=12A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=12A, dI/dt=100A/µs
11
14
17
Qrr
Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs
4.5
6
7.2
4.3
VGS=10V, VDS=15V, RL=1.2Ω,
RGEN=3Ω
ns
10
ns
12.8
ns
3.2
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: January 2010
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Page 2 of 6
AOD4102/AOI4102
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
30
10
6V
25
5V
7V
-40°C
VDS=5V
25
125°C
25°C
20
20
ID(A)
ID (A)
4.5V
15
4V
15
10
10
3.5V
5
5
VGS=3V
0
0
0
1
2
3
4
2
5
3
80
5
6
7
1.6
Normalized On-Resistance
70
VGS=4.5V
60
RDS(ON) (mΩ )
4
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
50
40
30
VGS=10V
20
10
VGS=10V
ID=12A
1.4
17
5
2
10
VGS=4.5V
1.2
1.0
ID=7A
0.8
0
0
-50
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
-25
0
25
50
75
100 125 150 175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+01
120
ID=12A
1.0E+00
40
1.0E-01
60
IS (A)
RDS(ON) (mΩ )
90
125°C
125°C
1.0E-02
-40°C
1.0E-03
25°C
30
25°C
1.0E-04
1.0E-05
0
4
5
6
7
8
9
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: January 2010
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOD4102/AOI4102
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
600
VDS=15V
ID=12A
500
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
2
400
300
200
0
1
2
3
4
5
6
Qg (nC)
Figure 7: Gate-Charge Characteristics
7
0
5
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
25
100
100.0
RDS(ON)
limited
100µs
DC
1.0
80
10µs
1ms
Power (W)
10µs
10.0
ID (Amps)
Crss
0
0
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
TJ(Max)=175°C
TC=25°C
17
5
2
10
60
40
20
1
VDS (Volts)
10
100
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
0
0.0001
0.001
0.01
0.1
1
0
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
Coss
100
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=7°C/W
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: January 2010
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Page 4 of 6
AOD4102/AOI4102
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
30
TA=25°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
35
25
20
TA=150°C
15
10
5
0
1.00E-07
20
15
10
5
0
1.00E-06
1.00E-05
1.00E-04
1.00E-03
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
0
25
50
75
100
150
175
1000
25
TA=25°C
Power (W)
20
Current rating ID(A)
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
15
10
100
17
5
2
10
10
5
1
0.00001
0
0
25
50
75
100
125
150
Zθ JA Normalized Transient
Thermal Resistance
10
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.1
0
18
TCASE (°C)
Figure 14: Current De-rating (Note F)
10
0.001
175
40
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: January 2010
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Page 5 of 6
AOD4102/AOI4102
Gate Charge Test Circuit & W aveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & W aveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & W aveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 0: January 2010
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6