AOD4102/AOI4102 30V N-Channel MOSFET General Description The AOD4102/AOI4102 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Features VDS 30V 19A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 37mΩ RDS(ON) (at VGS = 4.5V) < 64mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.3mH TC=25°C Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 1/6 Steady-State Steady-State A 12 mJ W 4.2 RθJA RθJC W 2.7 TJ, TSTG Symbol t ≤ 10s 9 10 PDSM TA=70°C A 21 PD TA=25°C Power Dissipation A 8 EAS, EAR TC=100°C A 6.5 IAS, IAR C V 30 IDSM TA=70°C ±20 13 IDM TA=25°C Continuous Drain Current Units V 19 ID TC=100°C Maximum 30 -55 to 175 Typ 20 50 4.5 °C Max 30 60 7 Units °C/W °C/W °C/W www.freescale.net.cn AOD4102/AOI4102 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 1 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 30 TJ=55°C 5 10 VGS=10V, ID=12A Static Drain-Source On-Resistance TJ=125°C VGS=10V, ID=12A TO251A gFS Forward Transconductance VGS=4.5V, ID=7A TO251A VDS=5V, ID=10A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Units V VDS=30V, VGS=0V Zero Gate Voltage Drain Current T0252 VGS=4.5V, ID=7A TO252 Max 30 IDSS RDS(ON) Typ 1.8 3 µA µA V A 30 37 46 55 53 64 mΩ 30.5 37.5 mΩ 53.5 64.5 mΩ 1 V 12 A 12 0.77 mΩ S 288 360 432 pF 31 45 59 pF 18 30 42 pF 0.5 1 1.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 5.3 6.6 8 nC Qg(4.5V) Total Gate Charge 2.5 3.2 4 nC 1.2 1.5 1.8 nC 1.3 2.2 3.1 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=12A 4.3 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=12A, dI/dt=100A/µs 11 14 17 Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs 4.5 6 7.2 VGS=10V, VDS=15V, RL=1.2Ω, RGEN=3Ω 10 ns 12.8 ns 3.2 ns ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. 2/6 www.freescale.net.cn AOD4102/AOI4102 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 10 6V 25 5V 7V -40°C VDS=5V 25 125°C 25°C 20 20 ID(A) ID (A) 4.5V 15 4V 15 10 10 3.5V 5 5 VGS=3V 0 0 0 1 2 3 4 2 5 3 80 5 6 7 1.6 Normalized On-Resistance 70 VGS=4.5V 60 RDS(ON) (mΩ ) 4 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 50 40 30 VGS=10V 20 10 VGS=10V ID=12A 1.4 17 5 2 10 VGS=4.5V 1.2 1.0 ID=7A 0.8 0 0 -50 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) -25 0 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 120 1.0E+01 ID=12A 1.0E+00 40 1.0E-01 60 IS (A) RDS(ON) (mΩ ) 90 125°C 125°C 1.0E-02 -40°C 1.0E-03 25°C 30 25°C 1.0E-04 1.0E-05 0 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AOD4102/AOI4102 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 10 VDS=15V ID=12A 500 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 200 Coss Crss 0 0 1 2 3 4 5 6 Qg (nC) Figure 7: Gate-Charge Characteristics 7 0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 25 100 100.0 RDS(ON) limited 100µs DC 1.0 1ms TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 0.1 80 10µs Power (W) 10µs 10.0 ID (Amps) 300 100 0 TJ(Max)=175°C TC=25°C 17 5 2 10 60 40 20 1 VDS (Volts) 10 100 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 400 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=7°C/W 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AOD4102/AOI4102 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 30 TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 35 25 20 TA=150°C 15 10 5 0 1.00E-07 20 15 10 5 0 1.00E-06 1.00E-05 1.00E-04 1.00E-03 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 150 175 1000 25 TA=25°C Power (W) 20 Current rating ID(A) 125 TCASE (°C) Figure 13: Power De-rating (Note F) 15 10 100 17 5 2 10 10 5 1 0.00001 0 0 25 50 75 100 125 150 Zθ JA Normalized Transient Thermal Resistance 10 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 0.1 0 18 TCASE (°C) Figure 14: Current De-rating (Note F) 10 0.001 175 40 RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AOD4102/AOI4102 30V N-Channel MOSFET Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & W aveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & W aveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 6/6 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn