AOD4102 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4102 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD4102 is Pb-free (meets ROHS & Sony 259 specifications). VDS (V) =30V ID = 12 A (VGS = 10V) RDS(ON) < 37 mΩ (VGS = 10V) RDS(ON) < 64 mΩ (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current G C C Repetitive avalanche energy L=0.3mH C TC=25°C Power Dissipation B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. V A 12 IAR 9 A EAR 12 mJ 30 21 4.2 W 2.7 TJ, TSTG °C -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 10 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B ±20 ID IDM PD TC=100°C TA=25°C Power Dissipation A Units V 12 TC=100°C Pulsed Drain Current Avalanche Current Maximum 30 RθJA RθJC Typ 20 50 4.5 Max 30 60 7 Units °C/W °C/W °C/W AOD4102 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250uA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 30 TJ=125°C VGS=4.5V, ID=7A gFS Forward Transconductance IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VDS=5V, ID=10A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge µA 5 10 VGS=10V, ID=12A IS V TJ=55°C VSD Units 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 VDS=24V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=15V, f=1MHz 1.8 3 30 37 V A 46 53 mΩ 64 mΩ 1 V 12 A 12 0.77 S 360 pF 45 pF 30 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=12A 1 pF 1.5 Ω 6.6 nC 3.2 nC Qgs Gate Source Charge 1.5 nC Qgd Gate Drain Charge 2.2 nC tD(on) Turn-On DelayTime 4.3 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=15V, RL=1.2Ω, RGEN=3Ω 10 ns 12.8 ns 3.2 ns trr Body Diode Reverse Recovery Time IF=12A, dI/dt=100A/µs 14 Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs 6 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev0: Oct 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD4102 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 10V 25 25 25°C 5V 7V 20 20 4.5V ID(A) ID (A) -40°C VDS=5V 6V 15 VGS=4V 15 125°C 10 10 25°C 3.5V 5 125°C 5 -40°C 3V 0 0 0 1 2 3 4 2 5 3 80 5 6 7 60 50 VGS=10V 40 30 20 10 Normalized On-Resistance 1.6 VGS=4.5V 70 RDS(ON) (mΩ) 4 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 1.4 VGS=10V, 12A 1.2 VGS=4.5V, 7A 1 0 0 0.8 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 120 ID=12A 1.0E+00 1.0E-01 125°C 60 IS (A) RDS(ON) (mΩ) 90 125°C 1.0E-02 -40°C 1.0E-03 30 25°C 25°C 1.0E-04 1.0E-05 0 0.0 FUNCTIONS NOTICE. 4 AND5RELIABILITY 6 7 WITHOUT 8 9 10 Rev0:July 2006 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOD4102 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 10 9 VDS=15V ID=12A 8 500 Capacitance (pF) VGS (Volts) 7 6 5 4 3 2 Ciss 400 300 200 Crss 100 Coss 1 0 0 0 1 2 3 4 5 6 Qg (nC) Figure 7: Gate-Charge Characteristics 0 7 100.0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 25 100 10µs 80 DC 100µ 1ms RDS(ON) limited 1.0 TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 0.1 ZθJC Normalized Transient Thermal Resistance TJ(Max)=175°C TA=25°C 60 40 20 1 VDS (Volts) 10 100 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=7°C/W 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 Power (W) ID (Amps) 10.0 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0:July Pulse Width (s) 2006 Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOD4102 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 30 Power Dissipation (W) ID(A), Peak Avalanche Current 35 25 20 TA=25°C TA=150°C 15 10 5 20 15 10 5 0 0 1.0E-07 1.0E-06 1.0E-05 1.0E-04 0 1.0E-03 25 100 125 150 175 TA=25°C 25 Power (W) 12 Current rating ID(A) 75 30 15 9 6 3 20 15 10 5 0 0 25 50 75 100 125 150 0 0.001 175 TCASE (°C) Figure 14: Current De-rating (Note B) 10 ZθJA Normalized Transient Thermal Resistance 50 TCASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 1 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0:July Pulse Width (s) 2006 Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. 100 1000